MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE MJE18002* MJF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The MJE/MJF18002 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Tight Parametric Distributions are Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS MAXIMUM RATINGS Rating Symbol Collector–Emitter Sustaining Voltage VCEO VCES Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Test No. 1 Per Fig. 1 Test No. 2 Per Fig. 2 Test No. 3 Per Fig. 3 Total Device Dissipation Derate above 25°C MJE18002 Unit 450 Vdc 1000 Vdc VEBO IC ICM 9.0 Vdc 2.0 5.0 Adc IB IBM 1.0 2.0 Adc VISOL — — — 4500 3500 1500 V PD 50 0.4 25 0.2 Watts W/°C (TC = 25°C) Operating and Storage Temperature MJF18002 TJ, Tstg CASE 221A–06 TO–220AB MJE18002 °C – 65 to 150 THERMAL CHARACTERISTICS Rating Symbol MJE18002 MJF18002 Unit Thermal Resistance — Junction to Case — Junction to Ambient RθJC RθJA 2.5 62.5 5.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED MJF18002 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 — — Vdc ICEO — — 100 µAdc ICES — — — — — — 100 500 100 µAdc IEBO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0) TC = 125°C TC = 125°C Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. (continued) Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VBE(sat) — — 0.825 0.92 1.1 1.25 Vdc Collector–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) VCE(sat) — — — — 0.2 0.2 0.25 0.3 0.5 0.5 0.5 0.6 hFE 14 — 11 11 6.0 5.0 10 — 27 17 20 8.0 8.0 20 34 — — — — — — — fT Cob — 13 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 35 60 pF Input Capacitance (VEB = 8.0 V) Cib — 400 600 pF VCE(dsat) — — 3.5 8.0 — — Vdc @ TC = 125°C @ TC = 125°C — — 1.5 3.8 — — @ TC = 125°C — — 8.0 14 — — @ TC = 125°C — — 2.0 7.0 — — ton — — 200 130 300 — ns toff — — 1.2 1.5 2.5 — µs ton — — 85 95 150 — ns toff — — 1.7 2.1 2.5 — µs tfi — — 125 120 200 — ns tsi — — 0.7 0.8 1.25 — µs tc — — 110 110 200 — ns tfi — — 110 120 175 — ns tsi — — 1.7 2.25 2.75 — µs tc — — 200 250 300 — ns tfi — — 140 185 200 — ns tsi — — 2.2 2.5 3.0 — µs tc — — 140 220 250 — ns ON CHARACTERISTICS @ TC = 125°C (IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 125°C DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) @ TC = 125°C DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) @ TC = 125°C DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 125°C DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation: determined 1.0 µs and 3.0 µs after rising IB1 reach 0.9 final IB1 (see Figure 18) IC = 0.4 A IB1 = 40 mA VCC = 300 V IC = 1.0 A IB1 = 0.2 A VCC = 300 V 1.0 µs 3.0 µs 1.0 µs 3.0 µs SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time Turn–Off Time Turn–On Time Turn–Off Time IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc VCC = 300 V IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 V @ TC = 125°C @ TC = 125°C @ TC = 125°C @ TC = 125°C SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time IC = 0.4 Adc, IB1 = 40 mAdc, IB2 = 0.2 Adc @ TC = 125°C Storage Time @ TC = 125°C Crossover Time @ TC = 125°C Fall Time IC = 1.0 Adc, IB1 = 0.2 Adc, IB2 = 0.5 Adc @ TC = 125°C Storage Time @ TC = 125°C Crossover Time @ TC = 125°C Fall Time IC = 0.4 Adc, IB1 = 50 mAdc, IB2 = 50 mAdc @ TC = 125°C Storage Time @ TC = 125°C Crossover Time @ TC = 125°C 2 Motorola Bipolar Power Transistor Device Data TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V TJ = 125°C h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN 100 TJ = 25°C 10 1 0.01 0.01 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 10 Figure 1. DC Current Gain @ 1 Volt VCE = 5 V TJ = – 20°C 1 0.01 0.01 10.00 10.00 TJ = 25°C 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 Figure 2. DC Current Gain @ 5 Volts 10.00 2 V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) TJ = 25°C 1 2A 1.5 A 1A 1.00 0.10 IC/IB = 5 0.4 A IC = 0.2 A 0 0.001 0.001 0.010 0.100 0.010 0.100 IB, BASE CURRENT (mA) 0.01 0.01 0.01 1.000 1.000 Figure 3. Collector Saturation Region TJ = 25°C TJ = 125°C 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 Figure 4. Collector–Emitter Saturation Voltage 1000 1.1 1.0 Cib 0.9 C, CAPACITANCE (pF) V BE, VOLTAGE (VOLTS) IC/IB = 10 0.8 TJ = 25°C 0.7 0.6 100 10 Cob TJ = 125°C IC/IB = 10 IC/IB = 5 0.5 0.4 0.01 0.01 TJ = 25°C f = 1 MHz 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) Figure 5. Base–Emitter Saturation Region Motorola Bipolar Power Transistor Device Data 10.00 10.00 1 11 10 100 10 100 VCE, COLLECTOR–EMITTER (VOLTS) 1000 1000 Figure 6. Capacitance 3 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 4500 2500 2000 4000 IB(off) = IC/2 VCC = 300 V PW = 20 µs IB(off) = IC/2 VCC = 300 V PW = 20 µs IC/IB = 5 3500 t, TIME (ns) t, TIME (ns) 3000 1500 TJ = 125°C IC/IB = 5 IC/IB = 10 1000 TJ = 25°C TJ = 125°C 2500 2000 IC/IB = 10 1500 TJ = 25°C 1000 500 500 0 0.4 0.4 0.6 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 0 0.4 0.4 2.0 2.0 0.6 0.6 Figure 7. Resistive Switching, ton IC/IB = 5 1000 500 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 1500 1000 500 TJ = 25°C TJ = 125°C IC/IB = 10 0.6 0.6 IC = 0.4 A 0 55 2.0 2.0 77 Figure 9. Inductive Storage Time, tsi tc 350 300 300 tc 200 100 15 15 TJ = 25°C TJ = 125°C 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) tc tfi TJ = 25°C TJ = 125°C 250 200 tc 100 1.8 1.8 Figure 11. Inductive Switching, tc & tfi, IC/IB = 5 4 13 13 150 tfi 0.6 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 400 tfi 0 0.4 11 99 11 hFE, FORCED GAIN 450 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH t, TIME (ns) t, TIME (ns) 400 TJ = 25°C TJ = 125°C Figure 10. Inductive Storage Time 600 500 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 1 A 2000 1500 0 0.4 0.4 2.0 2.0 2500 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH t si, STORAGE TIME (ns) t, TIME (ns) 2000 1.8 1.8 Figure 8. Resistive Switching, toff 3000 2500 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) tfi 50 2.0 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 Figure 12. Inductive Switching, tc & tfi, IC/IB = 10 Motorola Bipolar Power Transistor Device Data TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 250 180 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 140 230 IC = 0.4 A 120 100 IC = 1 A TJ = 25°C TJ = 125°C 80 60 55 66 77 88 190 170 150 130 110 IC = 0.4 A 90 TJ = 25°C TJ = 125°C 70 99 10 11 10 11 hFE, FORCED GAIN 12 12 13 13 14 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 1 A 210 TC, CROSS-OVER TIME (ns) t fi , FALL TIME (ns) 160 50 55 15 15 Figure 13. Inductive Fall Time 6 77 8 11 9 10 11 hFE, FORCED GAIN 12 13 14 15 Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 2.5 10.00 1 ms 50 µs 10 µs 1 µs I C, COLLECTOR CURRENT (AMPS) I C, COLLECTOR CURRENT (AMPS) 5 ms DC (MJE18002) 1.00 DC (MJF18002) 0.10 0.01 10 10 100 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 1000 Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 120 TC, CASE TEMPERATURE (°C) 140 140 Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 1.5 1.0 VBE(off) = 0.5 V 0.5 0V 0 0 –1.5 V 600 800 1000 200 400 800 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1200 Figure 16. Reverse Bias Switching Safe Operating Area 1.0 0.8 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 2.0 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T C = 25°C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 5 10 5 4 VCE dyn 1 µs 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 µs 1 6 0 5 TC VCLAMP 10% VCLAMP IB 90% IB1 10% IC 4 –1 90% IB –2 3 1 µs –3 –4 2 3 µs IB –5 0 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 µF 150 Ω 3V 100 Ω 3V IC PEAK 100 µF MTP8P10 VCE PEAK VCE MTP8P10 Rb1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A 50 Ω MJE210 COMMON 500 µF 150 Ω 3V IB2 Rb2 MTP12N10 1 µF V(BR)CEO(sus) L = 10 µH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA –Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL THERMAL RESPONSE 1.00 0.5 0.2 0.1 0.10 0.05 RθJC(t) = r(t) RθJC RθJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) P(pk) 0.02 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.01 0.10 1.00 10.00 1000.00 100.00 t, TIME (ms) r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 20. Typical Thermal Response (ZθJC(t)) for MJE18002 1.00 0.5 0.2 0.10 0.1 P(pk) t1 t2 0.02 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.10 1.00 10.00 100.00 RθJC(t) = r(t) RθJC RθJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1000.00 10000.00 100000.00 t, TIME (ms) Figure 21. Typical Thermal Response (ZθJC(t)) for MJF18002 Motorola Bipolar Power Transistor Device Data 7 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS B –T– F SEATING PLANE C T 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. S A Q 1 2 3 H DIM A B C D F G H J K L N Q R S T U V Z U K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y –T– –B– F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D–02 (ISOLATED TO–220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D Motorola Bipolar Power Transistor Device Data 9 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Bipolar Power Transistor Device Data *MJE18002/D* MJE18002/D