IXYS IXGR60N60C2D1 Lightspeed 2tm series (electrically isolated back surface) Datasheet

HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 60N60C2
IXGR 60N60C2D1
Lightspeed 2TM Series
(Electrically Isolated Back Surface)
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.7 V
= 35 ns
Preliminary Data Sheet
IXGR_C2
IXGR_C2D1
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
48
A
IF110
TC = 110°C (IXGR60N60C2D1)
39
A
ICM
TC = 25°C, 1 ms
300
A
ISOPLUS247
(IXGR)
C
G = Gate
E = Emitter
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
ICM = 100
A
z
z
z
z
250
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
50/60 Hz RMS, t = 1m
VISOL
2500
V
5
g
300
°C
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
(ISOLATED TAB)
C = Collector
Features
z
SSOA
E
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
z
z
z
z
z
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Symbol
Test Conditions
BV CES
VGE(th)
IC
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= 1 mA, VGE = 0 V
= 250 µA, VCE = VGE
© 2004 IXYS All rights reserved
600
3.0
GR60N60C2
GR60N60C2D1
TJ = 25°C
TJ = 125°C
2.3
2.0
5.0
V
V
50
650
µA
µA
±100
nA
2.7
V
V
z
z
z
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
DS99051D(05/04)
IXGR 60N60C2
IXGR 60N60C2D1
Symbol
gfs
Cies
Coes
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 50 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40
55
S
60N60C2
3900
280
pF
pF
320
97
pF
pF
140
nC
28
35
nC
nC
ns
60N60C2D1
C res
Qg
Qge
Qgc
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
td(on)
Inductive load, TJ = 25°C
18
tri
IC = 50 A, VGE = 15 V
25
ns
td(off)
VCE = 400 V, RG = Roff = 2.0 Ω
95 150
ns
tfi
35
0.49
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJ-DCB
RthJC
RthCS
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
(Note 2)
(Note 3)
Reverse Diode (FRED)
mJ
ns
ns
mJ
ns
ns
mJ
0.25
K/W
0.50 K/W
0.15
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 60 A, VGE = 0 V,
Note 1
IRM
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
t rr
ns
0.8
18
25
1.6
130
80
0.92
Inductive load, TJ = 125°C
ISOPLUS 247 Outline
TJ = 150°C
35
RthJC
2.0
1.39
V
8.3
A
ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate
3: RthJC is the thermal resistance junction-to-external side of DCB substrate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGR 60N60C2
IXGR 60N60C2D1
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
@ 25 deg. C
100
200
VG E = 15V
13V
11V
90
VG E = 15V
13V
11V
175
70
7V
60
50
40
30
125
100
7V
75
50
20
5V
10
25
5V
0
0
0.5
1
1.5
2
2.5
3
1
3.5
1.5
2
V CE - Volts
Fig. 3. Output Characteristics
2.5
3
V CE - Volts
100
4
4.5
1.2
VG E = 15V
13V
11V
80
9V
1.1
70
VC E (sat) - Normalized
90
7V
60
50
40
30
5V
VG E = 15V
I C = 100A
1
0.9
I C = 50A
0.8
0.7
I C = 25A
20
0.6
10
0
0.5
0.5
1
1.5
2
2.5
3
3.5
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Emitter Voltage
Fig. 6. Input Admittance
vs. Gate-to-Emiiter voltage
5
200
T J = 25º C
4.5
175
150
I C - Amperes
4
VCE - Volts
3.5
Fig. 4. Temperature Dependence of V CE(sat)
@ 125 Deg. C
I C - Amperes
9V
150
I C - Amperes
I C - Amperes
80
9V
3.5
3
2.5
I C = 100A
2
100
75
T J = 125º C
50
50A
1.5
125
25º C
-40º C
25
25A
1
0
5
6
7
8
9
10
11
V GE - Volts
© 2004 IXYS All rights reserved
12
13
14
15
3.5
4
4.5
5
5.5
6
6.5
V GE - Volts
7
7.5
8
8.5
IXGR 60N60C2
IXGR 60N60C2D1
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
100
6
90
T J = -40º C
80
25º C
125º C
E off - milliJoules
g f s - Siemens
70
TJ = 125º C
VGE = 15V
VCE = 400V
5
60
50
40
30
20
I C = 100A
4
I C = 75A
3
I C = 50A
2
1
10
0
25
50
75
100
125
150
175
2
200
6
8
10
12
14
R G - Ohms
Fig. 9. Dependence of Eoff on Ic
Fig. 10. Dependence of Eoff on Temperature
16
5
R G = 3 Ω.
R G = 10 Ω - - - - -
R G= 3 Ω
R G= 10 Ω - - - - 4
VG E = 15V
VC E = 400V
E off - milliJoules
4
4
I C - Amperes
5
E off - MilliJoules
I C = 25A
0
0
T J = 125 ºC
3
2
T J = 25 ºC
I C = 100A
VG E = 15V
VC E = 400V
I C = 75A
3
2
I C = 50A
1
1
0
0
I C = 25A
20
30
40
50
60
70
80
90
100
25
50
I C - Amperes
Fig. 11. Gate Charge
10000
VC E = 300V
I C = 50A
I G = 10mA
Capacitance - pF
VG E - Volts
100
125
Fig. 12. Capacitance
15
12
75
TJ - Degrees Centigrade
9
6
f = 1M Hz
C ies
1000
C oes
100
C res
3
0
10
0
20
40
60
80
100
120
140
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
0
5
10
15
20
25
V CE - Volts
30
35
40
IXGR 60N60C2
IXGR 60N60C2D1
Fig. 13. Maxim um Transient Therm al Resistance
0.55
0.5
R( t h ) J C - ºC / W
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
IXGR 60N60C2
IXGR 60N60C2D1
4000
160
A
140
IF
nC
120
3000
TVJ= 25°C
100
TVJ=100°C
2000
TVJ= 100°C
VR = 300V
A
60
IF=120A
IF= 60A
IF= 30A
Qr
80
80
TVJ= 100°C
VR = 300V
IRM
IF=120A
IF= 60A
IF= 30A
40
TVJ=150°C
60
1000
40
20
20
0
0
1
2
0
100
V
A/µs 1000
-diF/dt
VF
Fig. 14. Forward current IF versus VF
Fig. 15. Reverse recovery charge Qr
versus -diF/dt
2.0
140
TVJ= 100°C
VR = 300V
ns
130
trr
1.5
Kf
120
1.0
110
0
200
400
600 A/µs
800 1000
-diF/dt
Fig. 16. Peak reverse current IRM
versus -diF/dt
20
1.6
V
VFR
15
µs
1.2
VFR
tfr
IF=120A
IF= 60A
IF= 30A
IRM
0
10
0.8
5
0.4
tfr
100
0.5
0.0
Qr
0
40
90
80
120 °C 160
80
0
200
TVJ
400
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 17. Dynamic parameters Qr, IRM
versus TVJ
Fig. 18. Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 19. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
0.001
0.0001
0.00001
0
TVJ= 100°C
IF = 60A
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
s
t
1
Rthi (K/W)
ti (s)
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399
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