Diodes FMMT624 Sot23 npn silicon power Datasheet

SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
ISSUE 3 - NOVEMBER 1995
FEATURES
*
625mW POWER DISSIPATION
*
*
*
*
*
IC CONT 3A
12A Peak Pulse Current
Excellent HFE Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance; RCE(sat)
E
C
B
DEVICE TYPE
COMPLEMENT
PARTMARKING
RCE(sat)
FMMT617
FMMT717
617
50mΩ at 3A
FMMT618
FMMT718
618
50mΩ at 2A
FMMT619
FMMT720
619
75mΩ at 2A
FMMT624
FMMT723
624
-
FMMT625
–
625
-
ABSOLUTE MAXIMUM RATINGS.
FMMT FMMT FMMT FMMT FMMT
617
618
619
624
625
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
15
20
50
125
150
V
Collector-Emitter Voltage
VCEO
15
20
50
125
150
V
Emitter-Base Voltage
VEBO
5
5
5
5
5
V
Peak Pulse Current**
ICM
12
6
6
3
3
A
Continuous Collector Current
IC
3
2.5
2
1
1
A
Base Current
IB
500
mA
Power Dissipation at Tamb=25°C*
Ptot
625
mW
-55 to +150
°C
Operating and Storage Temperature Tj:Tstg
Range
UNIT
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3 - 149
FMMT617
FMMT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base
Breakdown Voltage
V(BR)EBO
Collector Cut-Off
Current
ICBO
MAX.
TYPICAL CHARACTERISTICS
UNIT
CONDITIONS.
70
V
IC=100µA
15
18
V
IC=10mA*
100m
5
8.2
V
IE=100µA
10m
1
0.4
+25 °C
IC/IB=60
0.3
0.2
100
nA
VCB=10V
Emitter Cut-Off Current IEBO
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
200
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
0.9
1.0
V
IC=3A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter Turn-On
Voltage
VBE(on)
Static Forward Current hFE
Transfer
Ratio
0.84
200
300
200
150
415
450
320
240
80
80
120
1.0
V
IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
MHz
IC=50mA, VCE=10V
f=50MHz
pF
VCB=10V, f=1MHz
120
ns
160
ns
VCC=10V, IC=3A
IB1=IB2=50mA
Transition
Frequency
fT
Output Capacitance
Cobo
30
Turn-On Time
t(on)
Turn-Off Time
t(off)
40
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC/IB=100
IC/IB=60
IC/IB=10
1m
1m
10m
1
100m
100°C
25°C
-55°C
0.1
0.0
1mA
10
10mA
1.0
1.4
VCE=2V
100A
450
25°C
10A
100A
IC/IB=60
1.2
1.0
0.8
0.6
10A
VCE(SAT) vs IC
VCE(SAT) v IC
100°C
1A
Collector Current
IC - Collector Current (A)
1.2
100mA
-55°C
0.8
-55°C
0.4
25°C
0.6
225
100°C
0.4
0.2
0.2
0.0
1mA
10mA
100mA
1A
10A
0
100A
0.0
1mA
10mA
Collector Current
1A
Collector Current
hFE vs IC
1.4
100mA
VBE(SAT) vs IC
SINGLE PULSE TEST Tamb = 25 deg C
VCE=2V
10
1.2
1.0
0.8
0.6
1.0
-55°C
D.C.
1s
100ms
10ms
1ms
100µs
25°C
100°C
0.1
0.4
0.2
0.0
1mA
10mA
100mA
1A
10A
100A
Collector Current
0.1
1.0
10
VCE (VOLTS)
VBE(ON) vs IC
3 - 150
0.01
Safe Operating Area
3 - 151
100
FMMT617
FMMT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
Collector-Emitter
Breakdown Voltage
V(BR)CEO
Emitter-Base
Breakdown Voltage
V(BR)EBO
Collector Cut-Off
Current
ICBO
MAX.
TYPICAL CHARACTERISTICS
UNIT
CONDITIONS.
70
V
IC=100µA
15
18
V
IC=10mA*
100m
5
8.2
V
IE=100µA
10m
1
0.4
+25 °C
IC/IB=60
0.3
0.2
100
nA
VCB=10V
Emitter Cut-Off Current IEBO
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
200
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
0.9
1.0
V
IC=3A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter Turn-On
Voltage
VBE(on)
Static Forward Current hFE
Transfer
Ratio
0.84
200
300
200
150
415
450
320
240
80
80
120
1.0
V
IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
MHz
IC=50mA, VCE=10V
f=50MHz
pF
VCB=10V, f=1MHz
120
ns
160
ns
VCC=10V, IC=3A
IB1=IB2=50mA
Transition
Frequency
fT
Output Capacitance
Cobo
30
Turn-On Time
t(on)
Turn-Off Time
t(off)
40
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC/IB=100
IC/IB=60
IC/IB=10
1m
1m
10m
1
100m
100°C
25°C
-55°C
0.1
0.0
1mA
10
10mA
1.0
1.4
VCE=2V
100A
450
25°C
10A
100A
IC/IB=60
1.2
1.0
0.8
0.6
10A
VCE(SAT) vs IC
VCE(SAT) v IC
100°C
1A
Collector Current
IC - Collector Current (A)
1.2
100mA
-55°C
0.8
-55°C
0.4
25°C
0.6
225
100°C
0.4
0.2
0.2
0.0
1mA
10mA
100mA
1A
10A
0
100A
0.0
1mA
10mA
Collector Current
1A
Collector Current
hFE vs IC
1.4
100mA
VBE(SAT) vs IC
SINGLE PULSE TEST Tamb = 25 deg C
VCE=2V
10
1.2
1.0
0.8
0.6
1.0
-55°C
D.C.
1s
100ms
10ms
1ms
100µs
25°C
100°C
0.1
0.4
0.2
0.0
1mA
10mA
100mA
1A
10A
100A
Collector Current
0.1
1.0
10
VCE (VOLTS)
VBE(ON) vs IC
3 - 150
0.01
Safe Operating Area
3 - 151
100
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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