DIODES SBL560

SBL530 - SBL560
5.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AC
L
B
M
C
D
K
A
Pin 1
Pin 2
E
Mechanical Data
·
·
·
·
·
·
J
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
G
N
R
P
Pin 1
Pin 2
Case
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
J
0.51
1.14
K
3.53Æ
4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
@ IF = 5.0A, TC = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
SBL
530
SBL
535
SBL
540
SBL
545
SBL
550
SBL
560
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
5.0
A
IFSM
175
A
VFM
0.55
0.70
V
IRM
0.5
33
mA
Cj
500
pF
RqJC
3
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23043 Rev. D-2
1 of 2
SBL530-SBL560
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
5
4
3
2
1
0
0
50
100
150
100
SBL530 - SBL545
10
SBL550 - SBL560
1.0
0.1
0.2
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics per Element
300
4000
8.3 ms single half-sine-wave
JEDEC method
Tj = 25°C
250
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Tj = 25°C
Pulse width = 300µs
2% duty cycle
200
150
100
1000
50
0
1
100
0.1
100
10
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per element
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.0
100
Tj = 100°C
10
Tj = 75°C
1.0
Tj = 25°C
0.1
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23043 Rev. D-2
2 of 2
SBL530-SBL560