ZVN3310A ID(On) -On-State Drain Current (Amps) 1.0 0.8 7V 0.6 6V 0.4 5V 0.2 4V 0 3V 0 10 20 30 40 50 1.4 1.0 0.8 7V 0.6 6V 5V 0.4 4V 0.2 3V 0 0 2 4 6 8 Output Characteristics Saturation Characteristics 8 6 4 ID= 1A 2 0.5A 0.2A 0 4 8 12 16 20 10 1.4 VDS= 25V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 VGS-Gate Source Voltage (Volts) 2 4 6 8 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 100 2.4 10 ID= 1A 0.5A 0.2A 1 1 2 3 4 5 6 7 8 9 10 2.2 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) VGS= 10V 9V 8V 1.2 VDS - Drain Source Voltage (Volts) 10 0 1.6 VDS - Drain Source Voltage (Volts) ID(On)-On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) VGS= 10V 9V 8V 1.2 1.8 1.6 1.4 1.2 rc ou -S ain r D es eR ce an ist ) on S( RD 1.0 0.8 0.6 Gate Thresh old Voltage VGS (th) 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage ID=-0.5A 2.0 20 T-Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3-379 ZVN3310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 10Ω TYPICAL CHARACTERISTICS 1.4 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 200 mA Pulsed Drain Current I DM 2 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 1 50 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=500mA mS V DS=25V,I D=500mA Forward Transconductance(1)(2 g fs ) 500 10 100 Input Capacitance (2) C iss 40 pF Common Source Output Capacitance (2) C oss 15 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Delay Time (2)(3) t d(on) 5 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 6 ns Fall Time (2)(3) tf 7 ns 3-378 V DS=25V, V GS=0V, f=1MHz V DD ≈25V, I D=500mA ZVN3310A ID(On) -On-State Drain Current (Amps) 1.0 0.8 7V 0.6 6V 0.4 5V 0.2 4V 0 3V 0 10 20 30 40 50 1.4 1.0 0.8 7V 0.6 6V 5V 0.4 4V 0.2 3V 0 0 2 4 6 8 Output Characteristics Saturation Characteristics 8 6 4 ID= 1A 2 0.5A 0.2A 0 4 8 12 16 20 10 1.4 VDS= 25V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 VGS-Gate Source Voltage (Volts) 2 4 6 8 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 100 2.4 10 ID= 1A 0.5A 0.2A 1 1 2 3 4 5 6 7 8 9 10 2.2 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) VGS= 10V 9V 8V 1.2 VDS - Drain Source Voltage (Volts) 10 0 1.6 VDS - Drain Source Voltage (Volts) ID(On)-On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) VGS= 10V 9V 8V 1.2 1.8 1.6 1.4 1.2 rc ou -S ain r D es eR ce an ist ) on S( RD 1.0 0.8 0.6 Gate Thresh old Voltage VGS (th) 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage ID=-0.5A 2.0 20 T-Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3-379 ZVN3310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 10Ω TYPICAL CHARACTERISTICS 1.4 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 200 mA Pulsed Drain Current I DM 2 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 1 50 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=500mA mS V DS=25V,I D=500mA Forward Transconductance(1)(2 g fs ) 500 10 100 Input Capacitance (2) C iss 40 pF Common Source Output Capacitance (2) C oss 15 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Delay Time (2)(3) t d(on) 5 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 6 ns Fall Time (2)(3) tf 7 ns 3-378 V DS=25V, V GS=0V, f=1MHz V DD ≈25V, I D=500mA ZVN3310A TYPICAL CHARACTERISTICS 160 gfs-Transconductance (mS) gfs-Transconductance (mS) 160 VDS= 25V 120 80 40 80 40 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 Transconductance v drain current 30 Ciss 20 10 Coss Crss 0 20 30 40 50 VGS-Gate Source Voltage (Volts) 40 10 4 6 8 10 12 Transconductance v gate-source voltage 50 0 2 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) C-Capacitance (pF) VDS= 25V 120 VDS-Drain Source Voltage (Volts) VDS= 20V 50V 16 14 ID=0.6A 12 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-380 80V