ON MCR12LN Silicon controlled rectifiers reverse blocking thyristor Datasheet

MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
Features
•
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
Pb−Free Packages are Available*
G
A
K
MARKING
DIAGRAM
AY WW
MCR12LxG
AKA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12LD
MCR12LM
MCR12LN
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
ITSM
100
A
I2t
41
A2sec
PGM
5.0
W
PG(AV)
0.5
W
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Value
Unit
V
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 125
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
December, 2005 − Rev. 2
2
TO−220AB
CASE 221A−09
STYLE 3
3
400
600
800
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 80°C)
© Semiconductor Components Industries, LLC, 2005
1
1
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR12LD
TO−220AB
50 Units / Rail
MCR12LDG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12LM
TO−220AB
50 Units / Rail
MCR12LMG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12LN
TO−220AB
50 Units / Rail
MCR12LNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR12L/D
MCR12LD, MCR12LM, MCR12LN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IDRM,
IRRM
−
−
−
−
0.01
2.0
mA
Peak Forward On−State Voltage (Note 2)
(ITM = 24 A)
VTM
−
−
2.2
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
IGT
2.0
4.0
8.0
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
IH
4.0
10
20
mA
Latch Current (VD = 12 V, Ig = 20 mA)
IL
6.0
12
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
VGT
0.5
0.65
0.8
V
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
100
250
−
V/ms
Critical Rate of Rise of On−State Current
IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA
di/dt
−
−
50
A/ms
Characteristic
OFF CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
2. Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%.
http://onsemi.com
2
MCR12LD, MCR12LM, MCR12LN
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
Anode −
1.0
VGT , GATE TRIGGER VOLTAGE (VOLTS)
10
GATE TRIGGER CURRENT (mA)
9
8
7
6
5
4
3
2
1
0
−40 −25 −10
5.0 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40
110 125
−10
5.0 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
100
IL , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)
−25
10
1.0
−40 −25 −10
5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
10
1.0
−40 −25 −10
110 125
Figure 3. Typical Holding Current
versus Junction Temperature
5.0 20 35 50
65 80 95
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Latching Current
versus Junction Temperature
http://onsemi.com
3
110 125
MCR12LD, MCR12LM, MCR12LN
P (AV), AVERAGE POWER DISSIPATION (WATTS)
120
α
α = CONDUCTION ANGLE
115
110
105
100
dc
95
α = 30°
90
0
1
2
60°
90°
180°
3
5
7
9 10
4
6
8
IT(RMS), RMS ON-STATE CURRENT (AMP)
11
12
20
180°
18
α
α
=
CONDUCTION
ANGLE
14
16
12
6
4
TJ = 125°C
2
0
0
1
2
3
4
5
6
7
8
9 10 11
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. On−State Power Dissipation
70
50
30
20
125°C
25°C
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.5
dc
8
100
10
90°
α = 30°
10
Figure 5. Typical RMS Current Derating
I T , INSTANTANEOUS ON−STATE CURRENT (AMPS)
TC, CASE TEMPERATURE (° C)
125
1.5
2.0
2.5
1.0
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 7. Typical On−State Characteristics
http://onsemi.com
4
3.0
12
MCR12LD, MCR12LM, MCR12LN
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
5
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MCR12L/D
Similar pages