DIODES ZVN4106F

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4106F
ZVN4106F
ISSUE 2 – DECEMBER 1995
ID - Drain Current (A)
4
VGS=20V
3
16V
14V
12V
2
10V
9V
8V
1
7V
6V
5V
4V
0
0
4
2
6
10
8
VDS - Drain Source Voltage (V)
RDS(on) - Drain Source On Resistance (Ω)
PARMARKING DETAIL - MZ
VGS=3.5V
8V
10
gfs - Transconductance (S)
Normalised RDS(on) and VGS(th)
1.2
VGS(th)
0
-50
0
50
14V
100
1
0.01
0.1
VDS=10V
100
0
0.5
0
Ciss
20
Coss
Crss
0
45
1.5
1.0
2.0
Transconductance v Drain Current
VGS - Gate Source Voltage (V)
C - Capacitance (pF)
40
60
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
60
V
Continuous Drain Current at T amb=25°C
ID
0.2
A
Pulsed Drain Current
I DM
3
A
Gate-Source Voltage
V GS
± 20
V
Max Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
Tj :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
ID(on) - Drain Current (A)
60
30
10
200
Normalised RDS(on) & VGS(th) v Temperature
15
1
ID - Drain Current (A)
150
80
PARAMETER
20V
Tj - Junction Temperature ( °C)
0
ABSOLUTE MAXIMUM RATINGS.
10V
300
0.6
G
6V
On-Resistance v Drain Current
RDS(on)
ID=0.5A
4V
5V
Saturation Characteristics
1.8
S
D
100
16
ID=0.5A
VDD=20V
40V
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BV DSS
60
Gate-Source Threshold
Voltage
V GS(th)
1.3
12
V
I D=1mA, V GS=0V
3
V
I D =1mA, V DS= V GS
Gate-Body Leakage
I GSS
100
nA
V GS=± 20V, V DS=0V
Zero Gate Voltage Drain
Current
I DSS
10
50
µA
µA
V DS=60V, V GS=0
V DS=48V, V GS=0V, T=125°C (2)
A
V DS=25V, V GS=10V
Ω
Ω
V GS=10V, I D=500mA
V GS=5V, I D=200mA
mS
V DS=25V, I D=250mA
On-State Drain Current(1)
I D(on)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance(1)(2 g fs
)
50V
MAX. UNIT CONDITIONS.
1
2.5
5
150
Input Capacitance (2)
C iss
35
pF
8
Common Source Output
Capacitance (2)
C oss
25
pF
4
Reverse Transfer Capacitance
(2)
C rss
8
pF
Turn-On Delay Time (2)(3)
T d(on)
5
ns
Rise Time (2)(3)
Tr
7
ns
Turn-Off Delay Time (2)(3)
T d(off)
6
ns
Fall Time (2)(3)
Tf
8
ns
0
0
0.6
1.2
1.8
VDS - Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
V DS=25V, V GS=0V, f=1MHz
V DD ≈25V, I D=150mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 400
3 - 399
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4106F
ZVN4106F
ISSUE 2 – DECEMBER 1995
ID - Drain Current (A)
4
VGS=20V
3
16V
14V
12V
2
10V
9V
8V
1
7V
6V
5V
4V
0
0
4
2
6
10
8
VDS - Drain Source Voltage (V)
RDS(on) - Drain Source On Resistance (Ω)
PARMARKING DETAIL - MZ
VGS=3.5V
8V
10
gfs - Transconductance (S)
Normalised RDS(on) and VGS(th)
1.2
VGS(th)
0
-50
0
50
14V
100
1
0.01
0.1
VDS=10V
100
0
0.5
0
Ciss
20
Coss
Crss
0
45
1.5
1.0
2.0
Transconductance v Drain Current
VGS - Gate Source Voltage (V)
C - Capacitance (pF)
40
60
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
60
V
Continuous Drain Current at T amb=25°C
ID
0.2
A
Pulsed Drain Current
I DM
3
A
Gate-Source Voltage
V GS
± 20
V
Max Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
Tj :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
ID(on) - Drain Current (A)
60
30
10
200
Normalised RDS(on) & VGS(th) v Temperature
15
1
ID - Drain Current (A)
150
80
PARAMETER
20V
Tj - Junction Temperature ( °C)
0
ABSOLUTE MAXIMUM RATINGS.
10V
300
0.6
G
6V
On-Resistance v Drain Current
RDS(on)
ID=0.5A
4V
5V
Saturation Characteristics
1.8
S
D
100
16
ID=0.5A
VDD=20V
40V
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BV DSS
60
Gate-Source Threshold
Voltage
V GS(th)
1.3
12
V
I D=1mA, V GS=0V
3
V
I D =1mA, V DS= V GS
Gate-Body Leakage
I GSS
100
nA
V GS=± 20V, V DS=0V
Zero Gate Voltage Drain
Current
I DSS
10
50
µA
µA
V DS=60V, V GS=0
V DS=48V, V GS=0V, T=125°C (2)
A
V DS=25V, V GS=10V
Ω
Ω
V GS=10V, I D=500mA
V GS=5V, I D=200mA
mS
V DS=25V, I D=250mA
On-State Drain Current(1)
I D(on)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance(1)(2 g fs
)
50V
MAX. UNIT CONDITIONS.
1
2.5
5
150
Input Capacitance (2)
C iss
35
pF
8
Common Source Output
Capacitance (2)
C oss
25
pF
4
Reverse Transfer Capacitance
(2)
C rss
8
pF
Turn-On Delay Time (2)(3)
T d(on)
5
ns
Rise Time (2)(3)
Tr
7
ns
Turn-Off Delay Time (2)(3)
T d(off)
6
ns
Fall Time (2)(3)
Tf
8
ns
0
0
0.6
1.2
1.8
VDS - Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
V DS=25V, V GS=0V, f=1MHz
V DD ≈25V, I D=150mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 400
3 - 399