SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 2 - OCTOBER 1997 ZHCS1000 ✪ FEATURES: • High current capability • Low V F APPLICATIONS: • Mobile telecomms, PCMIA & SCSI • DC-DC Conversion PARTMARKING DETAILS : ZS1 1 C 2 1 A 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 40 V Forward Current IF 1000 mA Forward Voltage @ IF = 1000mA(typ) VF 425 mV Average Peak Forward Current;D.C.= 50% IFAV 1750 mA Non Repetitive Forward Current t≤100µs t≤10ms IFSM 12 5.2 A A Power Dissipation at Tamb= 25° C Ptot 500 mW Storage Temperature Range Tstg -55 to + 150 °C Junction Temperature Tj 125 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V (BR)R 40 60 V IR= 300µA Forward Voltage VF 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 — mV mV mV mV mV mV mV mV IF= IF= IF= IF= IF= IF= IF= IF= * Reverse Current IR 50 100 µA V R= 30V Diode Capacitance CD 25 pF f= 1MHz,V R= 25V Reverse Recovery Time t rr 12 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2% 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* 1000mA,Ta= 100° C ZHCS1000 TYPICAL CHARACTERISTICS 100m IR - Reverse Current (A) IF - Forward Current (A) 10 1 100m +125°C 10m +25°C -55°C 10m +125°C 1m +100°C 100u +50° C 10u +25°C 1u 100n -55° C 1m 10n 0 0.1 0.2 0.3 0.4 0.5 0.6 10 0 20 30 VR - Reverse Voltage (V) VF - Forward Voltage (V) IR v VR 0.8 IF(av) - Avg Fwd Cur (A) Typical t1 D=t1/t p I F(pk) DC 0.6 tp D=0.5 I F(av) =D x I D=0.2 0.4 F(pk) D=0.1 0.2 0 D=0.05 75 85 95 105 115 PF(av) - Avg Pwr Diss (W) IF v VF 0.6 Typical Tj=125°C 0.4 t1 I F(pk) tp =D x I F(av)I DC D=0.5 D=0.2 D=0.1 D=0.05 0 TC - Case Temperature (°C) 0.4 F(pk) x PF(av)=I F(av) V 0.8 F 1.2 IF(av) - Avg Fwd Curr (A) PF(av) v IF(av) IF(av) v TC 200 Typical Rth=100° C/W Rth=200° C/W Rth=300° C/W 100 75 1 10 VR - Reverse Voltage (V) Ta v VR 100 CD - Diode Capacitance (pF) 125 Ta - Ambient Temp (°C) p 0.2 0 125 D=t1/t 100 0 0 10 20 VR - Reverse Voltage (V) CD v VR 30 ZHCS1000 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.