DIODES ZXMC3A16DN8

ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SO8
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC3A16DN8TA
7’‘
12mm
500 units
ZXMC3A16DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMC
3A16
Top view
ISSUE 1 - OCTOBER 2005
1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
30
-30
V
Gate-Source Voltage
V GS
⫾20
⫾20
V
Continuous Drain [email protected] GS =10V; T A =25⬚C (b)(d)
@V GS =10V; T A =70⬚C (b)(d)
@V GS =10V; T A =25⬚C (a)(d)
ID
6.4
5.1
4.9
-5.4
-4.3
-4.1
A
A
A
Pulsed Drain Current (c)
I DM
30
-25
A
Continuous Source Current (Body Diode)
(b)
N-Channel P-Channel
UNIT
IS
3.4
-3.2
A
Pulsed Source Current (Body Diode) (c)
I SM
30
-25
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)(d)
R θJA
100
°C/W
Junction to Ambient
(b)(e)
R θJA
70
°C/W
Junction to Ambient
(b)(d)
R θJA
60
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ISSUE 1 - OCTOBER 2005
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ZXMC3A16DN8
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
ZXMC3A16DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX.
UNIT
CONDITIONS
STATIC
DYNAMIC
I D =250µA, V GS =0V
0.5
µA
V DS =30V, V GS =0V
100
nA
V GS =±20V, V DS =0V
V
I =250µA, V DS = V GS
D
⍀
⍀
V GS =10V, I D =9A
V GS =4.5V, I D =7.4A
V DS =15V,I D =9A
1
Static Drain-Source On-State Resistance (1) R DS(on)
Forward Transconductance (1)(3)
V
0.035
0.050
g fs
13.5
S
(3)
Input Capacitance
C iss
796
pF
Output Capacitance
C oss
137
pF
Reverse Transfer Capacitance
C rss
84
pF
Turn-On Delay Time
t d(on)
3.0
ns
Rise Time
tr
6.4
ns
Turn-Off Delay Time
t d(off)
21.6
ns
Fall Time
tf
9.4
ns
Gate Charge
Qg
9.2
nC
Total Gate Charge
Qg
17.5
nC
Gate-Source Charge
Q gs
2.3
nC
Gate-Drain Charge
Q gd
3.1
nC
V SD
0.85
t rr
Q rr
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
V DD =15V, I D =3.5A
R G =6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T J =25°C, I S =5.1A,
V GS =0V
17.8
ns
T J =25°C, I F =3.5A,
di/dt= 100A/µs
11.6
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
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ZXMC3A16DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
Input Capacitance
TYP.
MAX.
UNIT
CONDITIONS
STATIC
V
I D =-250µA, V GS =0V
-1.0
␮A
V DS =-30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =-250␮A, V DS = V GS
D
⍀
⍀
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
9.2
S
V DS =-15V,I D =-4.2A
C iss
970
pF
Output Capacitance
C oss
166
pF
Reverse Transfer Capacitance
C rss
116
pF
Turn-On Delay Time
t d(on)
3.8
ns
Rise Time
tr
6.1
ns
Turn-Off Delay Time
t d(off)
35
ns
Fall Time
tf
19
ns
Gate Charge
Qg
12.9
nC
Total Gate Charge
Qg
24.9
nC
Gate-Source Charge
Q gs
2.67
nC
Gate-Drain Charge
Q gd
3.86
nC
V SD
-0.85
t rr
Q rr
1.0
0.048
0.070
DYNAMIC (3)
SWITCHING
V DS =-15 V, V GS =0V,
f=1MHz
(2) (3)
V DD =-15V, I D =-1A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
5
-0.95
V
T J =25°C, I S =-3.6A,
V GS =0V
21.2
ns
T J =25°C, I F =-2A,
di/dt= 100A/µs
18.7
nC
ZXMC3A16DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10V
3V
2.5V
10
1
2V
VGS
0.1
1.5V
0.01
0.1
10V
T = 150°C
4V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
1
3.5V
3V
2.5V
4V
10
2V
1
1.5V
0.1
VGS
0.01
1V
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
1.6
T = 150°C
T = 25°C
1
VDS = 10V
0.1
1
2
3
RDS(on)
1.2
1.0
0.8
VGS(th)
0.6
VGS = VDS
ID = 250uA
0.4
-50
4
VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
100
100
T = 25°C
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
VGS = 10V
ID = 1.5A
1.4
2V
10
VGS
2.5V
1
3V
0.1
4V
10V
0.01
0.1
1
T = 150°C
10
T = 25°C
1
0.1
0.2
10
ID Drain Current (A)
On-Resistance v Drain Current
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
1.4
Source-Drain Diode Forward Voltage
ISSUE 1 - OCTOBER 2005
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ZXMC3A16DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
1000
VGS Gate-Source Voltage (V)
C Capacitance (pF)
1200
800
600
CISS
COSS
CRSS
400
200
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ISSUE 1 - OCTOBER 2005
7
ID = 3.5A
8
6
4
2
VDS = 15V
0
0
5
10
15
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
20
ZXMC3A16DN8
P-CHANNEL TYPICAL CHARACTERISTICS
-ID Drain Current (A)
4V
T = 150°C
3.5V
3V
2.5V
10
-ID Drain Current (A)
10V
T = 25°C
2V
1
-VGS
0.1
1.5V
0.01
0.1
1
3.5V
3V
2.5V
2V
1
1.5V
-VGS
0.1
0.01
10
4V
10V
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
T = 150°C
T = 25°C
1
-VDS = 10V
0.1
1
2
VGS = -10V
ID = -4.2A
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
0.4
-50
3
-VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
T = 25°C
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
100
1.5V
100
-VGS
2V
10
2.5V
3V
1
3.5V
4V
0.1
10V
0.01
0.01
0.1
1
T = 150°C
10
0.1
0.010.0
10
-ID Drain Current (A)
T = 25°C
1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 1 - OCTOBER 2005
8
ZXMC3A16DN8
P-CHANNEL TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
1200
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
1400
1000
CISS
800
600
COSS
CRSS
400
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-ID = 4.2A
8
6
4
2
-VDS = 15V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 1 - OCTOBER 2005
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ZXMC3A16DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2005
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[email protected]
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[email protected]
Telephone (44) 161 622 4444
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ISSUE 1 - OCTOBER 2005
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