FDB120N10 N-Channel tm PowerTrench® MOSFET 100V, 74A, 12mΩ Features Description • RDS(on) = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • DC to DC Converters / Synchronous Rectification • High Power and Current Handling Capability • RoHS Compliant D D G D2-PAK G S FDB Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V - Continuous (TC = 25oC) 74 - Continuous (TC = 100oC) 52 - Pulsed A (Note 1) 296 A (Note 2) 198 mJ 5.8 V/ns (Note 3) (TC = 25oC) 170 W - Derate above 25oC 1.14 W/oC -55 to +175 oC 300 oC Ratings Units PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 100 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.88 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDB120N10 Rev. A 1 oC/W www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET June 2009 Device Marking FDB120N10 Device FDB120N10 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC 100 - - V ID = 250μA, Referenced to 25oC - 0.1 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 VDS = 100V, VGS = 0V,TC = 150oC - - 500 μA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 4.5 V - 9.7 12 mΩ - 105 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 74A VDS = 10V, ID = 74A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 80V ID = 74A VGS = 10V (Note 4, 5) - 4215 5605 pF - 405 540 pF - 170 255 pF - 66 86 nC - 26 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 74A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) - 27 64 ns - 105 220 ns - 39 88 ns - 15 40 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 74 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 296 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 74A - - 1.3 V trr Reverse Recovery Time 44 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 74A dIF/dt = 100A/μs - 67 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.11mH, IAS = 60A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 74A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB120N10 Rev. A 2 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 100 ID, Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 1000 ID, Drain Current[A] Figure 2. Transfer Characteristics 500 3000 10 100 o o -55 C 175 C o 25 C 10 *Notes: 1. 250μs Pulse Test 1 *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2. TC = 25 C 0.2 0.1 1 1 VDS, Drain-Source Voltage[V] 3 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 500 0.03 0.02 VGS = 10V VGS = 20V 0.01 100 o 175 C *Notes: 1. VGS = 0V *Note: TC = 25 C 0.00 0 50 100 150 200 ID, Drain Current [A] 250 1 0.2 300 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 1400 0 0.1 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics Ciss 4200 2800 2. 250μs Pulse Test 10 7000 5600 o 25 C 10 o FDB120N10 Rev. A 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.04 RDS(ON) [Ω], Drain-Source On-Resistance 4 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS = 25V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID =74A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 20 40 60 Qg, Total Gate Charge [nC] 80 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 1mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.4 2.0 1.6 1.2 *Notes: 1. VGS = 10V 2. ID = 74A 0.8 0.4 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 75 1000 100μs 1ms 100 ID, Drain Current [A] ID, Drain Current [A] 20μs 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: 50 25 o 0.1 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 t1 t2 0.02 *Notes: o 0.01 0.01 1. ZθJC(t) = 0.88 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 FDB120N10 Rev. A PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB120N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB120N10 Rev. A 5 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + D U T V D S _ I S D L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as D U T V D D • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I S D d i/d t ( D U T ) IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( D U T ) B o d y D io d e R e c o v e r y d v / d t V V S D D D B o d y D io d e F o r w a r d V o lta g e D r o p FDB120N10 Rev. A 6 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions FDB120N10 Rev. A 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDB120N10 Rev. A 8 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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