Microsemi APTM10DAM05TG Boost chopper mosfet power module Datasheet

APTM10DAM05TG
Boost chopper
MOSFET Power Module
NTC2
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
VBUS SENSE
CR1
Features
• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
OUT
Q2
G2
S2
G2
S2
VBUS
VBUS
SENSE
0/VBUS
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
OUT
OUT
S2
NTC2
G2
NTC1
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
278
207
1100
±30
5
780
100
50
3000
Unit
V
A
V
mΩ
W
A
July, 2006
0/VBU S
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTM10DAM05TG– Rev 1
VBUS
VDSS = 100V
RDSon = 4.5mΩ typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
APTM10DAM05TG
All ratings @ Tj = 25°C unless otherwise specified
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 125A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
IRM
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Unit
Max
Unit
nF
nC
165
Test Conditions
ns
280
135
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, R G =2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, R G = 2.5Ω
1.1
mJ
1.2
1.22
mJ
1.28
Min
Typ
Max
200
IF = 200A
VR = 133V
di/dt =400A/µs
350
600
Tj = 125°C
Tj = 25°C
200
1
1.4
0.9
60
Tj = 125°C
Tj = 25°C
110
400
Tj = 125°C
1680
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Unit
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 200A
IF = 400A
IF = 200A
mΩ
V
nA
80
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 250A
R G = 2.5 Ω
VR=200V
µA
360
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
20
8
2.9
700
Max
200
1000
5
4
±200
120
Chopper diode ratings and characteristics
VRRM
4.5
2
VGS = 10V
VBus = 50V
ID = 250A
Symbol Characteristic
Typ
µA
A
V
July, 2006
Symbol
ns
nC
2-6
APTM10DAM05TG– Rev 1
Electrical Characteristics
APTM10DAM05TG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
To Heatsink
M5
2500
-40
-40
-40
2.5
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
R 25
Max
0.16
0.29
Typ
50
3952
Max
Unit
°C/W
V
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-6
APTM10DAM05TG– Rev 1
July, 2006
SP4 Package outline (dimensions in mm)
APTM10DAM05TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.06
0.3
0.04
Single Pulse
0.1
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
240
VGS =15V, 10V & 9V
1000
ID, Drain Current (A)
800
600
8V
400
7V
6V
200
0
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
160
120
80
T J=25°C
40
T J=125°C
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 125A
1.1
V GS=10V
1
VGS=20V
0.9
1
2
3
4
5
6
VGS , Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
300
RDS(on) vs Drain Current
ID, DC Drain Current (A)
250
200
150
100
50
0.8
0
0
25
50
75 100 125 150 175 200
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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July, 2006
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
4-6
APTM10DAM05TG– Rev 1
ID, Drain Current (A)
Low Voltage Output Characteristics
1200
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID= 125A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
1.1
1.0
0.9
0.8
0.7
0.6
1000
100µs
limited by
RDSon
100
1ms
Single pulse
TJ=150°C
TC=25°C
10ms
10
-50 -25
0
25 50 75 100 125 150
1
TC, Case Temperature (°C)
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Crss
1000
0
10
100
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=250A
TJ=25°C
14
V DS =20V
12
VDS=50V
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
V DS =80V
8
6
4
2
0
0
200
400
600
800
1000
Gate Charge (nC)
July, 2006
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
10000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
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5-6
APTM10DAM05TG– Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10DAM05TG
APTM10DAM05TG
Delay Times vs Current
Rise and Fall times vs Current
250
350
250
t d(off)
VDS=66V
RG=2.5Ω
T J=125°C
L=100µH
200
150
td(on)
100
150
tf
100
0
0
0
100
200
300
ID, Drain Current (A)
400
0
100
200
300
ID, Drain Current (A)
400
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
2.5
2
Switching Energy (mJ)
3
Eoff
1.5
Eon
1
0.5
Eoff
0
VDS=66V
ID=200A
TJ=125°C
L=100µH
4
3
Eoff
Eon
2
1
0
0
100
200
300
400
0
5
I D, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
Hard
switching
60
ZVS
VDS=66V
D=50%
RG=2.5Ω
T J=125°C
T C=75°C
40
20
0
50
100
150
15
20
25
30
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
80
10
Gate Resistance (Ohms)
100
Frequency (kHz)
tr
50
50
Eon and Eoff (mJ)
V DS =66V
RG =2.5Ω
T J=125°C
L=100µH
200
tr and t f (ns)
t d(on) and td(off) (ns)
300
200
1000
TJ=150°C
100
TJ=25°C
10
1
250
I D, Drain Current (A)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM10DAM05TG– Rev 1
July, 2006
VSD, Source to Drain Voltage (V)
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