DMC2004VK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS(th) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.006 grams (approximate) • • • • • • SOT-563 D1 G2 S2 Q2 Q1 ESD protected TOP VIEW BOTTOM VIEW S1 G1 D2 TOP VIEW Internal Schematic Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Value 20 ±8 670 480 Unit V V Unit V V ID Value -20 ±8 -530 -380 Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Symbol PD RθJA Value 400 312.5 Unit mW °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Drain Source Voltage Gate-Source Voltage TA = 25°C TA = 85°C Drain Current (Note 1) Maximum Ratings P-CHANNEL – Q2 Characteristic Symbol VDSS VGSS TA = 25°C TA = 85°C Drain Current (Note 1) Notes: mA @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage Thermal Characteristics ID mA @TA = 25°C unless otherwise specified 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMC2004VK Document number: DS30925 Rev. 4 - 2 1 of 7 www.diodes.com November 2007 © Diodes Incorporated DMC2004VK Electrical Characteristics N-CHANNEL – Q1 NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ± 1.0 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.4 0.5 0.7 0.55 0.70 0.90 Ω |Yfs| VSD ⎯ ⎯ ⎯ 200 0.5 ⎯ ⎯ ⎯ 1.2 mS V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Condition VDS = 16V, VGS = 0V f = 1.0MHz Electrical Characteristics P-CHANNEL – Q2 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ± 1.0 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 mS V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz 4. Short duration pulse test used to minimize self-heating effect. DMC2004VK Document number: DS30925 Rev. 4 - 2 2 of 7 www.diodes.com November 2007 © Diodes Incorporated DMC2004VK ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0 0 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q1, N-CHANNEL ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature 10 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMC2004VK Document number: DS30925 Rev. 4 - 2 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage 3 of 7 www.diodes.com November 2007 © Diodes Incorporated DMC2004VK NEW PRODUCT Q1, N-CHANNEL, continued TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DMC2004VK Document number: DS30925 Rev. 4 - 2 4 of 7 www.diodes.com VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance November 2007 © Diodes Incorporated DMC2004VK -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0 0 -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q2, P-CHANNEL TA, AMBIENT TEMPERATURE (°C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 15 Static Drain-Source On-Resistance vs. Drain Current DMC2004VK Document number: DS30925 Rev. 4 - 2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage 5 of 7 www.diodes.com November 2007 © Diodes Incorporated DMC2004VK NEW PRODUCT Q2, P-CHANNEL, Continued TA, AMBIENT TEMPERATURE (°C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 5) Part Number DMC2004VK-7 Notes: -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance Case SOT-563 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information CAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September Date Code Key Year Code Month Code 2007 U Jan 1 DMC2004VK Document number: DS30925 Rev. 4 - 2 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 6 of 7 www.diodes.com Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D November 2007 © Diodes Incorporated DMC2004VK Package Outline Dimensions A SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm NEW PRODUCT B C D G M K H L Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMC2004VK Document number: DS30925 Rev. 4 - 2 7 of 7 www.diodes.com November 2007 © Diodes Incorporated