DIODES SBL860

SBL830 - SBL860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
High Current Capability, Low VF
High Surge Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AC
L
B
C
D
K
A
Pin 1
E
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Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
J
0.51
1.14
K
3.53Æ
4.09Æ
4.83
Pin 2
Mechanical Data
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·
M
Dim
J
G
N
R
P
Pin 1
Pin 2
Case
L
3.56
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@ IF = 8A, TC = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
SBL
830
SBL
835
SBL
840
SBL
845
SBL
850
SBL
860
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
8
A
IFSM
200
A
VFM
0.55
0.70
V
IRM
0.5
50
mA
Cj
700
pF
RqJC
6.9
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
DS23044 Rev. C-2
1 of 2
SBL830-SBL860
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
10
8
6
4
2
0
0
50
100
150
100
SBL830 - SBL845
10
SBL850 - SBL860
1.0
0.1
0.2
0.6
0.8
4000
8.3 ms single half-sine-wave
JEDEC method
Tj = 25°C
250
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
300
Tj = 25°C
Pulse width = 300µs
2% duty cycle
200
150
100
1000
50
0
1
10
100
0.1
100
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.0
100
Tj = 100°C
10
Tj = 75°C
1.0
Tj = 25°C
0.1
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23044 Rev. C-2
2 of 2
SBL830-SBL860