PHILIPS AN11010 Single stage ku band lna using bfu730f Datasheet

AN11010
Single stage Ku band LNA using BFU730F
Rev. 1.0 — 11 January 2011
Application note
Document information
Info
Content
Keywords
BFU730F, LNA, Ku band, LNB
Abstract
The document provides circuit, layout, BOM and performance information
on Ku band LNA equipped with NXP’s BFU730F wide band transistor.
AN11010
NXP Semiconductors
Ku band LNA using BFU730F
Revision history
Rev
Date
Description
1.0
Initial document
20110111
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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1. Introduction
BFU730F is a discrete HBT produced in NXP’s SiGeC QuBIC4x BiCmos process.
SiGeC is a normal silicon germanium process with the addition of Carbon in the base
layer of the NPN transistor. The presence of carbon in the base layer suppresses the
boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT
base and a heavier doped base. As a result, lower base resistance, lower noise and
higher cut off frequency can be achieved.
2. Requirements for Ku band LNA
The typical application for a Ku band LNA consists of amplification stage in the MW
preamplifier chain of a satellite LNB.
The noise figure requirements for LNBs may vary from standard to standard, however
most of them will set a figure of:
NFLNB ≤ 1.2dB
BFU730F typical values for the minimum noise figure and maximum stable gain at Ku
band frequency of 12GHz and bias of 2V / 10mA are:
NFmin = 1.1dB and Gmax = 12.5dB
This recommends the device as an alternative solution to replace pHemts in Ku band
LNA applications.
IF the target spec for the BFU730F LNA noise and gain is:
NF= 1.4dB and Gain = 11.5dB
The LNB system performance is as it shows up in Table 1:
Table 1.
BFU730F vs pHemt NF and Gain performance comparison
Preamplifier
2 stage
3 stage
st
1 stage
NF/Gain (dB)
nd
2 stage
NF/Gain (dB)
rd
3 stage
NF/Gain (dB)
Mixer stage
NF/Gain (dB)
LNB
NF/Gain (dB)
pHemt
0.8 / 12
pHemt
1 / 12
N/U
active
8/2
0.93 / 26
pHemt
0.8 / 12
BFU730F
1.4 / 11.5
N/U
active
8/2
0.97 / 25.5
pHemt
0.8 / 12
pHemt
1 / 12
pHemt
1 / 12
diode
12 / -12
0.88 / 24
pHemt
0.8 / 12
pHemt
1 / 12
BFU730F
1.4 / 11.5
diode
12 / -12
0.88 / 23.5
pHemt
0.8 / 12
BFU730F
1.4 / 11.5
BFU730F
1.4 / 11.5
diode
12 / -12
0.91 / 23
The performance of the stand-alone BFU730F amplifier is slightly worse compare to the
pHemt one, however in an LNB chain it gives almost no performance change when used
as LNA3, or minor acceptable degradation when used as LNA2.
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3. Design
The Ku band LNA consists of one stage BFU730F amplifier. It is aimed to replace more
costly pHemt transistors in the second and / or third stage of the LNB preamplifier. These
stages have to compensate the higher noise of the following mixer stage, thus their gain
has to be as high as possible. The driving designs criteria for the LNA is the
maximization of its gain. Secondly the noise figure has to be as good as possible, with a
very small compromise on gain. Due to the gain criteria, the input and output match are
also optimized. Stability wise the LNA has to be unconditionally stable over very broad
frequency range. In terms of linearity, the system analysis does not impose stringent
requirements.
The design has been conducted using Agilent’s Advanced Design System (ADS). The
2D EM Momentum tool has been used to design the microwave section and the PCB.
The linear and harmonic balanced circuit tools have been used to simulate the gain,
noise, match, stability and linearity performances of the LNA.
3.1 BFU730F Ku LNA - ADS simulation circuit
Fig 1.
AN11010
Application note
ADS simulation circuit for BFU730F Ku band LNA
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3.2 BFU730F Ku LNA - ADS Gain and match simulation results
Fig 2.
ADS Gain and match simulation results for BFU730F Ku band LNA
3.3 BFU730F Ku LNA - ADS NF simulation results
Fig 3.
AN11010
Application note
ADS Noise Figure simulation results for Ku band LNA
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3.4 BFU730F Ku band LNA - ADS stability simulation results
As K≥1 and Mu≥1, the LNA is unconditionally stable for the whole frequency band
Fig 4.
ADS stability simulation results for Ku band LNA
3.5 BFU730F Ku band LNA - ADS linearity simulation results
OIP3 = Pf1+(Pf1-P2f1_f2)/2 = -0.4dBm + (-0.4 + 24.2)/2dB = 11.5dBm
IIO3 = OIP3 – Gain = 11.5dBm – 10.2dB = 1.3dBm
Fig 5.
AN11010
Application note
ADS linearity simulation results for Ku band LNA
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4. Implementation
4.1 Schematic
Fig 6.
AN11010
Application note
Schematic for BFU730F Ku band LNA EvB
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4.2 Layout and assembly
Fig 7.
Table 2.
Layout and assembly information for BFU730F Ku band LNA EvB
Bill of materials
Designator Description
Size
Q1
2X2mm
BFU730F
PCB
C1, C6
AN11010
Application note
Value
Type
Note
NXP Semiconductors
HBT
Murata
GRM1555C1HR10BA01
Input match
30X30mm
Capacitor
0402
2X
0.1pF
(0.2pF)
GRM1555C1HR20BA01
C2, C3
Capacitor
0402
220pF
Decoupling
C4
Capacitor
0402
47nF
Decoupling
R1
Resistor
0402
47R
Stability
R2
Resistor
0402
10R
Stability
R3
Resistor
0402
27k
Bias
R4
Resistor
0402
300R
Bias
X1, X2
SMA RF
connector
Giga Lane PSF-S01
RF
connector
X3
DC connector
Molex, PCB header 2way
Bias
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4.3 Printed Circuit Board details
The PCB material used for this LNA Evaluation Board is Rogers RO4003. The PC board
consists of: 0.35um top metal layer, 0.5mm thickness low loss dielectric layer with εR =
3.38 and TanD=0.0024 and 0.35um bottom metal layer
4.4 LNA view
Fig 8.
AN11010
Application note
BFU730F Ku LNA EvB
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4.5 Measurement results
4.5.1 Gain and match – typical values
(1) No gain correction has been applied / see § 5.3 to apply correction
(2) Blue – S11, red – S22
Fig 9.
BFU730F Ku band LNA – Gain and match measurement plots
4.5.2 NF and Gain – typical values
(1) NF and Gain correction applied / see § 5.3 for value
Fig 10. BFU730F Ku band LNA – NF and Gain measurement plots
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4.5.3 Linearity / OIP3 – typical values
OIP3 = Pf1+(Pf1-P2f1_f2)/2 = 4.2dBm + (4.2 + 30)/2dB = 21.3dBm
IIO3 = OIP3 – Gain = 21.3dBm – 11dB = 10.3dBm
Fig 11. BFU730F Ku band LNA – Linearity measurement plot
4.5.4 Gain, NF, Current vs temperature
BFU730F Ku LNA exhibits less than 1dB gain variation for temperature varying in the
range of: -40ºC to +85ºC
Table 3.
Gain / NF vs Temp
[1]
BFU730F EvB4 tested for Gain and NF variation over temperature
[1]
AN11010
Application note
Temperature (ºC)
Icc (mA)
NF (dB)
Gain (dB)
+25
11.6
1.45
10.7
+50
11.4
1.6
10.65
+70
11.1
1.75
10.6
+85
11.0
1.8
10.55
-10
11.8
1.2
11.2
-25
11.9
1.15
11.2
-40
12
1.1
11.25
Measurements have been focused on relative variation of the Gain and NF vs. temperature, however the
absolute numbers might not be accurate. NF and Gain plots are available by request.
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4.5.5 Summary
Measurements results averaged over nine EvBs are presented in Table 4
Table 4.
Typical results measured on the BFU730F Ku band LNA Evaluation Boards
Operating frequency is f=11.5GHz unless otherwise specified; Temp = 25 °C
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.75
5
5.25
V
Supply Current
ICC
10.8
11.5
12.1
mA
Power gain
Application note
10.55
dB
11.25GHz
10.9
dB
11.15
dB
12.25GHz
11
dB
12.75GHz
10.4
dB
10.75GHz
1.4
dB
11.25GHz
1.25
dB
1.2
dB
12.25GHz
1.2
dB
12.75GHz
1.35
dB
11.75GHz
Noise Figure
AN11010
10.75GHz
11.75GHz
Gp
NF
[2] [3]
[4] [5]
Input Return Loss
RLin
12
dB
Output Return Loss
RLout
12
dB
Input 1dB Gain Compression
Pi1dB
0.5
dBm
Input third order intercept point
IP3i
10
dBm
[2]
No gain correction has been applied. To apply gain correction see § 5.3
[3]
Average Gain = 10.85dB
[4]
NF correction applied, see § 5.3
[5]
Average NF = 1.3dB
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5. NF and Gain measurement corrections
There are two types of errors and losses that have been taken into account to correct the
NF and Gain measurement results: (1) Own system error for NF measurement and (2)
insertion losses accounted to RF IN and RF OUT connectors, microstrip feed lines and
the DC block used at the output of the LNA in NF measurements.
5.1 NF measurement system error
A Miteq professional amplifier, rated as NF=1dB, Gain=24dB, has been used as
reference for NF measurement system correction. Its manufacturer data is in Fig 12:
Fig 12. Miteq amp 062
Miteq 062 amplifier measured with the NF setup used to qualify the BFU730F Ku band
LNA has the NF performances listed in Fig 13. The system correction factor, NFsys, is
the difference between the measured NF and the 1dB reference value from the catalog
(2) NFsys= NFtable13 – 1dB represents the NF system correction factor: average value =
0.5dB
Fig 13. Miteq 062 amplifier NF and Gain
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5.2 Insertion losses
The losses that have to be taken into account are: (1) RF connectors and micro strip
lines for Gain-match measurement and RF connectors and microstrip lines plus output
DC block for the NF-Gain measurement.
Fig 14 and Fig 15 below plot the two losses:
(3) RF_IL = 0.75dB represents the total on board loss of the LNA (RF connectors and 50Ω line)
Fig 14. Insertion loss for 2 RF connector and 27mm uStrip line on Rogers4003 PCB
(4) RF_IL_DC=0.95dB represents the on board loss + output DC block loss
(5) DC block loss ≈ 0.2dB
Fig 15. Insertion loss for a RO4003 27mm SMA_SMA thru + Agilent DC block
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Fig 16 shows the on board loss spitted between the input and the output:
(6) RF input loss = 0.15dB / RF output loss = 0.5dB
Fig 16. Insertion loss distribution
5.3 Correction factors for Gain-match and NF-Gain measurements
Table 5.
Correction factors / values
Measurement
Correction Corrected for
type
on
Gain-match on
Network Analyzer
NF-Gain on
NF Analyzer
AN11010
Application note
Correction value
Correction
applied
Gain
RFin + RFout total loss
RF_IL=RFin + RFout = 0.75dB
N
NF
NF System error + RFin loss NFsys+RFin = 0.5dB+0.15dB ≈0.65dB
Y
Gain
RFout loss + DC block loss
Y
RF_IL_DC –NFsys-RFin=0.95dB-0.65dB =
0.3dB
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6. Abbreviations / explanations
Table 6.
AN11010
Application note
List of abbreviation within text
Abbreviation
Stands for
LNA
Low Noise Amplifier
LNB
Low Noise Block
Ku band LNB
LNB in the frequency band of 10.7 ~ 12.75GHz
NF
Noise Figure
PCB
Printed Circuit Board
BOM
Bill of materials
ABS-S LNB
LNB for China Satellite System
MW
Microwave
EM
Electromagnetic
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7. Legal information
7.1 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
7.2 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
AN11010
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customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express,
implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire
risk as to the quality, or arising out of the use or performance, of this product
remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be
liable to customer for any special, indirect, consequential, punitive or
incidental damages (including without limitation damages for loss of
business, business interruption, loss of use, loss of data or information, and
the like) arising out the use of or inability to use the product, whether or not
based on tort (including negligence), strict liability, breach of contract, breach
of warranty or any other theory, even if advised of the possibility of such
damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by
customer for the product or five dollars (US$5.00). The foregoing limitations,
exclusions and disclaimers shall apply to the maximum extent permitted by
applicable law, even if any remedy fails of its essential purpose.
7.3 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are property of their respective owners.
<Name> — is a trademark of NXP B.V.
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8. List of figures
Fig 1.
Fig 2.
Fig 3.
Fig 4.
Fig 5.
Fig 6.
Fig 7.
Fig 8.
Fig 9.
Fig 10.
Fig 11.
Fig 12.
Fig 13.
Fig 14.
Fig 15.
Fig 16.
ADS simulation circuit for BFU730F Ku band
LNA ................................................................... 4
ADS Gain and match simulation results for
BFU730F Ku band LNA .................................... 5
ADS Noise Figure simulation results for Ku band
LNA ................................................................... 5
ADS stability simulation results for Ku band LNA
.......................................................................... 6
ADS linearity simulation results for Ku band LNA
.......................................................................... 6
Schematic for BFU730F Ku band LNA EvB ....... 7
Layout and assembly information for BFU730F
Ku band LNA EvB ............................................. 8
BFU730F Ku LNA EvB ....................................... 9
BFU730F Ku band LNA – Gain and match
measurement plots ......................................... 10
BFU730F Ku band LNA – NF and Gain
measurement plots ......................................... 10
BFU730F Ku band LNA – Linearity measurement
plot .................................................................. 11
Miteq amp 062 ................................................. 13
Miteq 062 amplifier NF and Gain...................... 13
Insertion loss for 2 RF connector and 27mm
uStrip line on Rogers4003 PCB ...................... 14
Insertion loss for a RO4003 27mm SMA_SMA
thru + Agilent DC block ................................... 14
Insertion loss distribution .................................. 15
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9. List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
BFU730F vs pHemt NF and Gain performance
comparison ....................................................... 3
Bill of materials.................................................. 8
Gain / NF vs Temp .......................................... 11
Typical results measured on the BFU730F Ku
band LNA Evaluation Boards .......................... 12
Correction factors / values .............................. 15
List of abbreviation within text ......................... 16
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10. Contents
1.
2.
3.
3.1
3.2
3.3
3.4
3.5
4.
4.1
4.2
4.3
4.4
4.5
4.5.1
4.5.2
4.5.3
4.5.4
4.5.5
5.
5.1
5.2
5.3
6.
7.
7.1
7.2
7.3
8.
9.
10.
Introduction ......................................................... 3
Requirements for Ku band LNA ......................... 3
Design .................................................................. 4
BFU730F Ku LNA - ADS simulation circuit ............ 4
BFU730F Ku LNA - ADS Gain and match
simulation results ............................................... 5
BFU730F Ku LNA - ADS NF simulation results ..... 5
BFU730F Ku band LNA - ADS stability simulation
results ................................................................ 6
BFU730F Ku band LNA - ADS linearity simulation
results ................................................................ 6
Implementation .................................................... 7
Schematic.............................................................. 7
Layout and assembly ............................................ 8
Printed Circuit Board details .................................. 9
LNA view ............................................................... 9
Measurement results ........................................... 10
Gain and match – typical values.......................... 10
NF and Gain – typical values............................... 10
Linearity / OIP3 – typical values .......................... 11
Gain, NF, Current vs temperature ....................... 11
Summary ............................................................. 12
NF and Gain measurement corrections .......... 13
NF measurement system error ............................ 13
Insertion losses ................................................... 14
Correction factors for Gain-match and NF-Gain
measurements ................................................. 15
Abbreviations / explanations............................ 16
Legal information .............................................. 17
Definitions............................................................ 17
Disclaimers .......................................................... 17
Trademarks ......................................................... 17
List of figures..................................................... 18
List of tables ...................................................... 19
Contents ............................................................. 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in the section 'Legal information'.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 January 2011
Document identifier: AN11010
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