Kexin AO3407-3 P-channel enhancement mosfet Datasheet

MOSFET
IC
SMD Type
P-Channel Enhancement MOSFET
AO3407
(KO3407)
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
ID = -4.1 A
1
RDS(ON)
52m
(VGS = -10V)
RDS(ON)
87m
(VGS = -4.5V)
0.55
VDS (V) = -30V
+0.2
1.6 -0.1
+0.2
2.8 -0.1
Features
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
+0.2
1.1 -0.1
D
0-0.1
G
S
+0.1
0.68 -0.1
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Ta = 25℃
ID
Ta = 70℃
Pulsed Drain Current
Power Dissipation
IDM
Ta = 25℃
PD
Ta = 70℃
Thermal Resistance.Junction- to-Ambient
t ≤10s
Steady State
Thermal Resistance.Junction- to-Lead
RthJA
RthJL
Unit
V
-4.1
-3.5
A
-20
1.4
1
W
90
125
℃/W
60
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
℃
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MOSFET
IC
SMD Type
P-Channel Enhancement MOSFET
AO3407
(KO3407)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Symbol
VDSS
IDSS
IGSS
Gate Threshold Voltage
VGS(th)
Test Conditions
Min
RDS(On)
-30
ID=-250μA, VGS=0V
VDS=-24V, VGS=0V, TJ=55℃
-5
VDS=VGS ID=-250μA
VGS=-10V, ID=-4.A
TJ=125℃
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
±100
nA
-3
V
40.5
52
57
73
64
87
-10
VDS=-5V, ID=-4A
5.5
8.2
VGS=0V, VDS=-15V, f=1MHz
75
VGS=0V, VDS=0V, f=1MHz
10
8.6
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Maximum Body-Diode Continuous Current
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A7*
ns
28.2
IF=-4A, dI/dt=100A/μs
27
15
IS
VSD
Marking
5
13.5
tf
Diode Forward Voltage
Marking
VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=3Ω
nC
7
3.1
trr
Ω
14.3
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd
Qrr
pF
120
td(on)
Body Diode Reverse Recovery Charge
S
700
Turn-On DelayTime
Body Diode Reverse Recovery Time
mΩ
A
Gate Drain Charge
Turn-Off Fall Time
2
VGS=-4.5V, VDS=-5V
μA
-1.8
VDS=0V, VGS=±20V
-1
Unit
V
-1
VGS=-4.5V, ID=-3A
On state drain current
Max
VDS=-24V, VGS=0V
VGS=-10V, ID=-4.1A
Static Drain-Source On-Resistance
Typ
IS=-1A,VGS=0V
-0.77
nC
-2.2
A
-1
V
MOSFET
SMD Type
P-Channel Enhancement MOSFET
AO3407
(KO3407)
■ Typical Characterisitics
10
20
-10V
-5V
-4.5V
-4V
-ID (A)
-ID (A)
V DS =-5V
8
15
10
-3.5V
5
4
V GS =-3V
0
0.00
6
125°C
2
25°C
0
1.00
2.00
3.00
4.00
5.00
0
1
100
Normalized On-Resistance (Ω)
R DS(ON) (mΩ)
3
4
1.6
80
V GS =-4.5V
60
V GS =-10V
40
20
V GS =-4.5V
1.4
V GS =-10V
1.2
1
I D =-2A
0.8
0
2
4
6
8
10
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
160
1E+01
140
1E+00
ID=-2A
1E-01
-IS (A)
120
R DS(ON) (mΩ)
2
-VGS (Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
100
125°C
80
125°C
1E-02
1E-03
25°C
1E-04
60
25°C
40
1E-05
1E-06
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
P-Channel Enhancement MOSFET
AO3407
(KO3407)
■ Typical Characterisitics
1000
10
V DS =-15V
I D =-4A
800
Capacitance (pF)
-VGS (Volts)
8
6
4
2
C iss
600
400
C oss
C rss
200
0
0
0
4
8
12
16
0
-Q g (nC)
Figure 7: Gate-Charge Characteristics
100
15
20
25
30
40
T J(Max) =150°C
T A =25°C
R DS(ON)
limited
30
100 µs 10 µs
Power (W)
-I D (Amps)
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
T J(Max) =150°C
T A =25°C
10
5
1ms
0.1s
10ms
1
20
10
1s
10s
DC
0.1
0.1
1
10
-VDS (Volts)
0
0.001
100
Z θJA Normalized Transient
Thermal Resistance
D=T on/T
T J,PK =T A +P DM .ZθJA .RθJA
R θJA =90°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
.
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
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100
1000
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