DIODES 1N5819HW

1N5819HW
NEW PRODUCT
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
SOD-123
D
H
G
Mechanical Data
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Case: SOD-123, Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: Cathode Band
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Date Code and Type Code, See Page 3
Type Code: SL
Weight: 0.01 grams (approx.)
Ordering Information: See Page 3
Maximum Ratings
J
Min
Max
A
3.55
3.85
B
2.55
2.85
C
1.40
1.70
D
—
1.35
E
A
B
C
Dim
G
E
0.55 Typical
0.25
—
H
0.11 Typical
J
—
0.10
a
0°
8°
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
@ IR = 1.0mA
RMS Reverse Voltage
Average Rectified Output Current
@ TL = 90°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Power Dissipation (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
DS30217 Rev. 6 - 2
Symbol
1N5819HW
Unit
VRRM
VRWM
VR
40
V
VR(RMS)
28
V
IO
1.0
A
IFSM
25
A
Pd
450
mW
RqJA
222
°C/W
Tj, TSTG
-65 to +125
°C
1 of 3
1N5819HW
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
V(BR)R
40
VF
¾
¾
¾
Reverse Leakage Current (Note 1)
IR
¾
¾
¾
¾
¾
¾
Total Capacitance
CT
¾
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Notes:
Typ
Max
Unit
Test Condition
¾
¾
V
IR = 1.0mA
¾
¾
¾
0.320
0.450
0.750
V
IF = 0.1A
IF = 1.0A
IF = 3.0A
¾
¾
10
1
15
1.5
1.0
10
50
2
75
3
mA
mA
mA
mA
mA
mA
VR = 40V, TA = 25°C
VR = 40V, TA = 100°C
VR = 4V, TA = 25°C
VR = 4V, TA = 100°C
VR = 6V, TA = 25°C
VR = 6V, TA = 100°C
110
¾
pF
VR = 4V, f = 1.0MHz
1. Short duration pulse test used to minimize self-heating effect.
2. Device mounted on FR-4 PC Board, 2”x2”, 2 oz. Copper, single sided, Cathode pad dimensions 0.75”x1.0”,
Anode pad dimensions 0.25”x1.0”.
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE OUTPUT CURRENT (A)
1.0
0.8
0.6
0.4
0.2
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
5
4
3
2
Tj = 25°C
Tj = 125°C
Pulse Width = 300 ms
2% Duty Cycle
1
0
0
10
40
60
80
100
140
120
0.5
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0
TT, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
25
1000
Tj = 25ºC
f = 1MHz
CT, TOTAL CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
NEW PRODUCT
Electrical Characteristics
20
15
10
100
5
8.3ms Single Half Sine-Wave
JEDEC Method
10
0
0.1
1
10
100
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
DS30217 Rev. 6 - 2
1.0
2 of 3
1N5819HW
IR, INSTANTANEOUS REVERSE CURRENT (mA)
TA, AMBIENT TEMPERATURE (ºC)
R(q) JA = 300°C/W
Note 1
125
100
75
50
25
1
20
10
10.0
1.0
Tj = 75°C
0.1
Tj = 25°C
0.01
0.001
30 40 50
0
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Safe Operating Area
Ordering Information
Notes:
5
10
15
20
30
25
35
40
45
VR, RATED PEAK REVERSE VOLTAGE (V)
Fig. 6 Typical Reverse Characteristics
(Note 3)
Device
Packaging
Shipping
1N5819HW-7
SOD-123
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
YM
NEW PRODUCT
150
XX
Date Code Key
Year
2001
2002
2003
2004
2005
2006
2007
2008
Code
M
N
P
R
S
T
U
V
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30217 Rev. 6 - 2
3 of 3
1N5819HW