CEL NE425S01 C to ku band super low noise amplifier n-channel hj-fet Datasheet

PRELIMINARY DATA SHEET
C to KU BAND SUPER LOW
NOISE AMPLIFIER N-CHANNEL HJ-FET
NE425S01
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
FEATURES
• SUPER LOW NOISE FIGURE:
0.60 dB TYP at 12 GHz
24
VDS = 2 V
ID = 10 mA
• HIGH ASSOCIATED GAIN:
12.0 dB TYP at f = 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
DESCRIPTION
Ga
16
The NE425S01 is a Hetero-Junction FET that utilizes the hetero
junction to create high mobility electrons. Its excellent low noise
and high associated gain make it suitable for DBS and other
commercial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
1.0
12
0.5
8
NF
0
1
2
4
6
8
10
14
SYMBOLS
CHARACTERISTICS
UNITS MIN TYP MAX
VDS
Drain to Source Voltage
V
2
3
10
20
ID
Drain Current
mA
Pin
Input Power
dBm
PARAMETERS AND CONDITIONS
NE425S01
S01
UNITS
MIN
TYP
MAX
0.60
0.80
GA1
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
10.5
12.0
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
Saturated Drain Current, VDS = 2 V, VGS = 0 V
IGSO
0
(TA = 25°C)
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
IDSS
4
30
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
NF1
VGS(off)
20
Frequency, f (GHz)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
Associated Gain, GA (dB)
Noise Figure, NF (dB)
20
dB
mA
20
60
90
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA
V
-0.2
-0.7
-2.0
Gate to Source Leak Current, VGS = -3 V
µA
0.5
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
NE425S01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
VDS
UNITS
RATINGS
V
4.0
Drain to Source Voltage
VGS
V
-3.0
ID
Gate to Source Voltage
Drain Current
mA
IDSS
IG
Gate Current
µA
100
PT
Total Power Dissipation
mW
165
TCH
Channel Temperature
°C
125
Tstg
Storage Temperature
°C
-65 to +125
VDS = 2V
f = 12 GHz
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
14
Ga
13
12
2.0
11
1.5
10
1.0
0.5
NF
0
10
20
30
Drain Current, ID (mA)
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
100
200
80
Drain Current, ID (mA)
Total Power Dissipation, PT (mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
50
VGS = 0 V
60
-0.2 V
40
-0.4 V
20
-0.6 V
-0.8 V
0
50
100
150
200
250
0
1.5
3.0
Ambient Temperature, TA (°C)
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, IS21Sl2 (dB)
24
Drain Current, ID (mA)
VDS = 2 V
60
40
20
0
-2.0
-1.0
Gate to Source Voltage, VGS (V)
0
VDS = 2 V
ID = 10 mA
20
MSG.
MAG.
16
IS21sl 2
12
8
4
1
2
4
6
8
10
Frequency, f (GHz)
14
20
30
Associated Gain, GA (dB)
PARAMETERS
Noise Figure, NF (dB)
SYMBOLS
NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN CURRENT
NE425S01
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
90˚
1
.8
1.5
.6
2
135˚
.4
.2
S22
18 GHz
0
.2
.4
.6
.8
1
1.5
4
5
S22
0.5 GHz
2
3
45˚
3
S11
18 GHz
4 5
10
20
10 20
S12
0.5 GHz
S11
0.5 GHz
180˚
-20
-10
S21
0.5 GHz
-5
-4
-.2
0.025 0.050
2.000
-3
3.000
-.4
225˚
-2
-.6
-.8
-1
-1.5
0˚
1.000
S12
S21
18 GHz
18 GHz 315˚
4.000
Coordinates in Ohms
Frequency in GHz
VDS = 2 V, IDS = 10 mA
270˚
VDS = 2 V, ID = 10 mA
FREQUENCY
S11
(GHz)
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
11.50
12.00
12.50
13.00
14.00
15.00
16.00
17.00
18.00
MAG
0.998
0.991
0.983
0.973
0.963
0.952
0.936
0.918
0.896
0.864
0.830
0.796
0.762
0.731
0.703
0.675
0.647
0.624
0.597
0.571
0.536
0.501
0.474
0.454
0.440
0.432
0.430
0.442
0.466
0.514
0.592
S21
ANG
-6.25
-12.36
-18.30
-24.28
-30.28
-36.31
-42.52
-48.91
-55.17
-61.77
-68.21
-74.65
-81.27
-87.80
-94.41
-101.21
-107.84
-114.92
-122.27
-130.41
-138.75
-147.71
-157.02
-167.49
-178.22
170.87
149.21
127.80
106.73
87.16
69.36
MAG
4.353
4.325
4.304
4.300
4.268
4.253
4.228
4.205
4.159
4.099
4.038
3.970
3.888
3.825
3.769
3.708
3.660
3.623
3.586
3.532
3.484
3.434
3.329
3.263
3.208
3.156
3.051
2.924
2.770
2.610
2.457
S12
ANG
172.87
166.07
159.56
152.97
146.39
139.87
133.14
126.39
119.62
112.65
105.96
99.70
93.42
87.11
81.02
75.10
68.76
62.69
56.50
49.97
43.60
37.56
31.21
25.00
18.95
13.02
-0.17
-13.75
-27.29
-40.28
-53.68
MAG
0.006
0.013
0.019
0.025
0.030
0.036
0.042
0.047
0.052
0.056
0.060
0.064
0.067
0.070
0.073
0.076
0.078
0.081
0.083
0.085
0.088
0.089
0.091
0.092
0.093
0.094
0.096
0.098
0.099
0.100
0.100
S22
ANG
85.38
81.34
77.34
73.13
68.91
65.00
60.80
56.72
52.48
48.56
44.48
40.77
37.05
33.52
30.04
26.89
23.80
20.66
17.61
14.41
11.15
7.98
4.74
1.38
-1.63
-4.93
-11.35
-18.32
-25.93
-33.90
-41.97
MAG
0.581
0.577
0.571
0.565
0.556
0.546
0.535
0.522
0.506
0.487
0.466
0.445
0.424
0.404
0.384
0.367
0.351
0.334
0.317
0.296
0.275
0.249
0.222
0.196
0.169
0.146
0.115
0.103
0.119
0.166
0.236
ANG
-4.35
-8.60
-12.75
-16.87
-21.01
-25.10
-29.22
-33.29
-37.48
-41.54
-45.70
-49.87
-53.98
-58.13
-62.07
-66.26
-70.16
-73.96
-77.74
-81.66
-85.75
-90.60
-96.41
-102.92
-111.44
-122.20
-149.45
175.83
137.09
105.34
85.49
K
MAG1
0.075
0.151
0.200
0.249
0.292
0.325
0.376
0.427
0.489
0.576
0.662
0.736
0.815
0.879
0.933
0.979
1.033
1.063
1.108
1.155
1.204
1.272
1.333
1.381
1.417
1.442
1.471
1.491
1.519
1.506
1.418
(dB)
28.606
25.220
23.551
22.355
21.531
20.724
20.029
19.517
19.030
18.645
18.280
17.926
17.637
17.375
17.129
16.883
15.596
14.973
14.357
13.796
13.247
12.728
12.179
11.816
11.536
11.314
10.957
10.603
10.216
9.963
10.061
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE425S01
NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.001pF
Ldx
DRAIN
Lgx
GATE
Q1
0.6nH
Rdx
6 ohms
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Lsx
0.07nH
CDS_PKG
0.05PF
Rsx
0.06 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameter
Units
Parameters
Q1
Parameters
Q1
VTO
-0.8
RG
3
time
seconds
VTOSC
0
RD
2
capacitance
farads
henries
ALPHA
8
RS
2
inductance
BETA
0.103
RGMET
0
resistance
ohms
volts
amps
GAMMA
0.092
KF
0
voltage
GAMMADC
0.08
AF
1
current
Q
2
TNOM
27
DELTA
1
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
4e-12
CDS
0.13e-12
RDB
5000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V
Date:
2/98
NE425S01
TYPICAL NOISE PARAMETERS (TA = 25°C)
OUTLINE DIMENSIONS (Units in mm)
VDS = 2 V, ID = 10 mA
PACKAGE OUTLINE S01
2.0 ± 0.2
0
2.
1
±
G
2.0 ± 0.2
0.5 TYP.
2
0.
2
4
ΓOPT
FREQ.
NFMIN
GA
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.31
18.35
0.93
14
0.38
4
0.34
16.31
0.80
29
0.33
6
0.40
14.56
0.65
48
0.25
8
0.45
13.28
0.49
72
0.18
10
0.52
12.33
0.36
102
0.11
12
0.60
11.11
0.27
139
0.08
14
0.72
10.40
0.24
-176
0.07
16
0.86
9.86
0.30
-122
0.10
18
1.00
9.63
0.47
-58
0.22
3
0.65 TYP.
1.9 ± 0.2
1.6
1.5 MAX
1.
2.
3.
4.
0.125 ± 0.05
Source
Drain
Source
Gate
0.4 MAX
4.0 ± 0.2
ORDERING INFORMATION
PART
NUMBER
SUPPLY FORM
PACKAGE
OUTLINE
NE425S01
NE425S01-T1
NE425S01-T1B
Bulk
Tape & Reel 1000 pcs./reel
Tape & Reel 4000 pcs./reel
S01
S01
S01
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -12/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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