Fairchild FQD10N20L N-channel qfet mosfet Datasheet

FQD10N20L / FQU10N20L
N-Channel QFET® MOSFET
200 V, 7.6 A, 360 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V,
ID = 3.8 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
• Low level gate drive requirement allowing direct
operation from logic drivers
D
D
!
G
G
S
D
"
S
G!
! "
"
"
I-PAK
D-PAK
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
- Pulsed
(Note 1)
TL
Unit
V
7.6
A
4.8
A
30.4
A
± 20
V
(Note 2)
180
mJ
Avalanche Current
(Note 1)
7.6
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
5.1
5.5
2.5
mJ
V/ns
W
51
0.4
-55 to +150
W
W/°C
°C
300
°C
FQD10N20L / FQU10N20L
Unit
°C/W
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
FQD10N20L / FQU10N20L
200
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient *
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
110
°C/W
2.48
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
April 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
200
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.18
IDSS
IGSSF
IGSSR
VDS = 200 V, VGS = 0 V
--
--
1
µA
VDS = 160 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.8 A
VGS = 5 V, ID = 3.8 A
--
0.29
0.3
0.36
0.38
Ω
Forward Transconductance
VDS = 30 V, ID = 3.8 A
--
9.6
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
640
830
pF
--
95
125
pF
--
14
18
pF
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
RDS(on)
gFS
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 10 A,
RG = 25 Ω
VDS = 160 V, ID = 10 A,
VGS = 5 V
(Note 4, 5)
(Note 4, 5)
--
13
35
ns
--
150
310
ns
--
50
110
ns
--
95
200
ns
--
13
17
nC
--
2.4
--
nC
--
6.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.6
A
ISM
--
--
30.4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.6 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
120
--
ns
Qrr
Reverse Recovery Charge
--
0.57
--
µC
VGS = 0 V, IS = 10 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.7mH, IAS = 7.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Electrical Characteristics
1
ID, Drain Current [A]
10
Bottom :
VGS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
1
10
ID, Drain Current [A]
Top :
0
10
150℃
0
10
25℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
-55℃
-1
-1
10
-1
0
10
10
1
10
0
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS = 5V
1
10
1.2
IDR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
1.6
VGS = 10V
0.8
0.4
※ Note : TJ = 25℃
0.0
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
-1
0
5
10
15
20
10
25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
900
Ciss
600
Coss
300
※ Notes :
1. V = 0 V
2. f = 1 MHz
Crss
VGS, Gate-Source Voltage [V]
1200
Capacitance [pF]
0
10
VDS = 40V
8
VDS = 100V
VDS = 160V
6
4
2
※ Note : ID = 10 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
8
Operation in This Area
is Limited by R DS(on)
2
10
100 µ s
1
10
ID , Drain Current [A]
ID , Drain Current [A]
6
10 µ s
1 ms
10 ms
DC
0
10
※ Notes :
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
0
25
10
0
1
10
2
10
10
50
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
0 .2
※ N otes :
1 . Z θ J C ( t ) = 2 . 4 8 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
10
100
D = 0 .5
0
-1
0 .0 2
0 .0 1
PDM
s in g le p u ls e
θ JC
(t), T h e rm a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
Z
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Typical Characteristics
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
5V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
FQD10N20L / FQU10N20L N-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
Sync-Lock™
FPS™
®
AccuPower™
F-PFS™
®*
®
®
®
AX-CAP *
PowerTrench
FRFET
SM
Global Power Resource
PowerXS™
BitSiC™
TinyBoost™
Programmable Active Droop™
Green Bridge™
Build it Now™
TinyBuck™
QFET®
Green FPS™
CorePLUS™
TinyCalc™
QS™
Green FPS™ e-Series™
CorePOWER™
TinyLogic®
Quiet Series™
Gmax™
CROSSVOLT™
TINYOPTO™
RapidConfigure™
GTO™
CTL™
TinyPower™
IntelliMAX™
Current Transfer Logic™
™
TinyPWM™
®
ISOPLANAR™
DEUXPEED
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK®
SignalWise™
and Better™
TriFault Detect™
EfficentMax™
SmartMax™
MegaBuck™
TRUECURRENT®*
ESBC™
SMART START™
MICROCOUPLER™
μSerDes™
Solutions for Your Success™
MicroFET™
®
SPM®
MicroPak™
®
STEALTH™
MicroPak2™
Fairchild
UHC®
SuperFET®
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-3
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-6
mWSaver™
FACT®
VCX™
SuperSOT™-8
OptoHiT™
FAST®
®
®
VisualMax™
SupreMOS
OPTOLOGIC
FastvCore™
®
VoltagePlus™
OPTOPLANAR
SyncFET™
FETBench™
XS™
Similar pages