Infineon BSP450 Miniprofet(high-side switch short-circuit protection input protection overtemperature protection with hysteresis) Datasheet

Mini PROFET® BSP 450
MiniPROFET
• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
• Reverse battery protection1)
4
3
2
1
Package: SOT 223
Pins
Type
Ordering code
1
2
3
4
BSP 450
Q67000-S266
OUT
GND
IN
Vbb
Maximum Ratings
Parameter
Supply voltage range
Load current
self-limited
Maximum input voltage2)
Maximum input current
Inductive load switch-off energy dissipation
single pulse
IL = 0.5A , TA = 85°C
Operating temperature range
Storage temperature range
Max. power dissipation (DC)3)
TA = 25 °C
Electrostatic discharge capability (ESD) 4)
Symbol
Vbb
IL
VIN
IIN
EAS
Thermal resistance
chip - soldering point:
chip - ambient3)
Values
-0.3...48
IL(SC)
-5.0...Vbb
±5
0.5
Unit
V
A
V
mA
J
Tj
Tstg
Ptot
VESD
-40 ...+125
-55 ...+150
1.4
±1
°C
RthJS
RthJA
7
70
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
R
IN
K/W
4
V Logic
ESDDiode
3
W
kV
OUT
Temperature
sensor
1
in
Load
ESD
Logic
GND
MINI-PROFET
2
Signal GND
Load GND
1) With resistor R
GND=150 Ω in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
2) At V > V , the input current is not allowed to exceed ±5 mA.
IN
bb
3) BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm 2 copper area for V connection
bb
4) HBM according to MIL-STD 883D, Methode 3015.7
Semiconductor Group
Page 1 of 7
20.06.96
BSP 450
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 24V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
IL = 0.5 A, Vin = high
Tj = 25°C
Tj = 125°C
5)
Nominal load current (pin 4 to 1)
ISO Standard: VON = Vbb - VOUT = 0.5 V
TS = 85 °C
Turn-on time
to 90% VOUT
Turn-off time
to 10% VOUT
RL = 47 Ω
Slew rate on
10 to 30% VOUT, RL = 47 Ω
Slew rate off
70 to 40% VOUT, RL = 47 Ω
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
Vbb = 18...30V
Tj = -25...+125°C
Input turn-off threshold voltage
Vbb = 18...30V
Tj = -25...+125°C
Input threshold hysteresis
Off state input current (pin 3)
VIN(off) = 1.82 V
Tj = -25...+125°C
On state input current (pin 3) VIN(on) = 3.0 V to Vbb
Tj = -25...+125°C
Input resistance
Tj = -25...+125°C
5) I
Values
min
typ
Unit
max
---
0.16
--
0.2
0.38
Ω
0.7
--
--
A
ton
toff
---
60
90
100
150
µs
dV /dton
--
2
4
V/µs
-dV/dtoff
--
2
4
V/µs
VIN
VIN(T+)
-3.0
--
---
Vbb
3.0
V
V
VIN(T-)
1.82
--
--
V
-20
0.1
--
---
V
µA
--
--
110
µA
1.5
2.8
3.5
kΩ
RON
IL(ISO)
∆VIN(T)
IIN(off)
IIN(on)
RIN
L(ISO) is limited by the current limitation, see IL(SC)
Semiconductor Group
Page 2
20.06.96
BSP 450
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 24V unless otherwise specified
Operating Parameters
Operating voltage
Tj =-25...+125°C
Undervoltage shutdown
Tj =-25...+125°C
Undervoltage restart
Tj =-25...+125°C:
Undervoltage hysteresis
Standby current (pin 4), Vin = low Tj =-25...+100°C
Tj =125°C6)
Operating current (pin 2), Vin = high
Tj =-25...+125°C
leakage current (pin 1) Vin = low Tj =-25...+125°C
Protection Functions
Current limit (pin 4 to 1)
Tj = 25°C
Tj = -25...+125°C
Overvoltage protection Ibb=4mA Tj =-25...+125°C
Output clamp (ind. load switch off)
at VOUT = Vbb - VON(CL), Ibb = 4mA
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation 7)
Tj Start = 85 °C, single pulse, IL = 0.5 A, Vbb = 12 V
Reverse Battery
Reverse battery voltage 8)
Continious reverse drain current
Drain-Source diode voltage
IF = 1 A, Vin = low
TA = 25°C
Vbb(on)
Vbb(under)
Vbb(u rst)
∆Vbb(under)
Ibb(off)
Values
min
typ
12
7
----
---0.4
10
IGND
--
IL(off)
Unit
max
1
40
10.5
11
-25
50
1.6
mA
--
--
2
µA
1.5
--72
2
2.4
---
A
Vbb(AZ)
VON(CL)
0.7
0.7
48
--
V
V
Tjt
∆Tjt
EAS
135
---
150
10
--
--0.5
°C
K
J
---
30
1
1.2
V
A
V
IL(SC)
-Vbb
-IS
-VON
---
V
V
V
V
µA
VOUT>Vbb
6) increase of standby current at T = 125°C caused by temperature sense current
j
7) while demagnetizing load inductance, dissipated energy is E = (V
AS ∫ ON(CL) * iL(t) dt,
VON(CL)
2
1
)
approx. EAS= /2 * L * I * (
L
VON(CL)-Vbb
8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.
Semiconductor Group
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20.06.96
BSP 450
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
Current limit characteristic
IL(SC) = f (Von) (Von see testcircuit)
IL(SC) [A]
16
3.5
14
3
12
2.5
TS P
10
2
8
125°C
25°C
-25°C
1.5
6
1
4
TA
0.5
2
0
0
0
25
50
75
100
125
0
5
10
15
20
25
Von [V]
TA, TSP[°C]
Typ. input current
IIN = f(VIN); Vbb = 24 V
IIN [µA]
On state resistance (Vbb-pin to OUT pin)
RON = f (Tj);Vbb = 24 V;IL = 0.5 A
RON [Ω]
0.4
90
0.35
80
-25°C
70
25°C
0.3
60
0.25
125°C
98%
50
0.2
40
0.15
30
0.1
20
0.05
10
0
0
-50
-25
0
25
50
75
100
125
Tj [°C]
Semiconductor Group
Page 4
0
5
10
15
20
25
VIN [V]
20.06.96
BSP 450
Typ. overload current
IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart
IL(lim) [A]
Typ. operating current
IGND = f (Tj), Vbb=30V, VIN=high
GND [mA]
1.6
1
1.4
0.8
1.2
1
0.6
0.8
125°C
0.6
-25°C
0.4
0.4
0.2
0.2
0
-20
0
20
40
60
80
100
0
-25
0
25
50
75
100
t [ms]
Short circuit current
IL(SC) = f (Tj);Vbb = 30 V;
IL(SC) [Α]
125
Tj [°C]
Typ. standby current
Ibb(off) = f(Tj); Vbb = 30 V, VIN = low
Ibb(off) [µA]
1.6
7
1.4
6
1.2
5
1
4
0.8
3
0.6
2
0.4
1
0.2
0
-25
0
0
25
50
75
100
125
-25
Tj [°C]
Semiconductor Group
Page 5
0
25
50
75
100
125
150
Tj [°C]
20.06.96
BSP 450
Test circuit
Typ. input turn on voltage threshold
VIN(T+) = f (Tj)
VIN(T+) [V]
3
18V
2.5
30V
2
1.5
1
0.5
0
-25
0
25
50
75
100
125
Tj [°C]
Typ. on-state resistance (Vbb-Pin to OUT-Pin)
RON = f (Vbb,IL); IL = 0.5A, Tj = 25 °C;
RON [mΩ]
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
45
Vbb [V]
Semiconductor Group
Page 6
20.06.96
BSP 450
Package:
all dimensions in mm.
SOT 223/4:
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
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The information describes a type of component and shall not be considered as warranted characteristics.
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Semiconductor Group
Page 7
20.06.96
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