IXYS IXGH50N120C3 Genx3 1200v igbt Datasheet

Preliminary Technical Information
GenX3TM 1200V IGBT
VCES =
IC110 =
VCE(sat) ≤
tfi(typ) =
IXGH50N120C3
High speed PT IGBTs
for 20 - 50 kHz switching
1200V
50A
4.2V
64ns
TO-247 (IXGH)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
75
50
250
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
40
750
A
mJ
SSOA
(RBSOA)
VGE = 15V, TJ = 125°C, RG = 3Ω
Clamped inductive load @VCE≤ 1200V
ICM = 100
A
PC
TC = 25°C
460
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13 / 10
Nm/lb.in.
300
260
°C
°C
6
g
TJ
TJM
Tstg
Md
Mounting torque
TL
TSOLD
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Weight
G
BVCES
VGE(th)
IC
IC
= 250μA, VGE = 0V
= 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
1200
3.0
z
z
z
TJ = 125°C
= 40A, VGE = 15V, Note 1
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
2.6
V
V
100
2
μA
mA
±100
nA
4.2
V
V
International standard packages:
JEDEC TO-247AD
IGBT and anti-parallel FRED in one
package
MOS Gate turn-on
- drive simplicity
Applications
z
z
z
5.0
C = Collector
TAB = Collector
Features
z
Characteristic Values
Min. Typ.
Max.
TAB
E
G = Gate
E = Emitter
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
C
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
DS99996(06/08)
IXGH50N120C3
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Cies
Coes
Cres
Characteristic Values
Min.
Typ.
Max.
IC = 40A, VCE = 10V, Note 1
24
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
40
S
4190
330
130
pF
pF
pF
196
nC
24
nC
84
nC
20
34
2.2
123
64
ns
ns
mJ
ns
ns
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive load, TJ = 25°°C
IC = 40A, VGE = 15V
VCE = 600V, RG = 2Ω
Note 1
0.63
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°°C
IC = 40A, VGE = 15V
VCE = 600V, RG = 2Ω
Note 1
RthJC
RthCK
TO-247 (IXGH) Outline
1.2
mJ
20
35
4.3
170
315
2.1
ns
ns
mJ
ns
ns
mJ
0.21
0.27 °C/W
°C/W
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH50N120C3
Fig. 1. Output Characteristics
@ 25ºC
100
Fig. 2. Extended Output Characteristics
@ 25ºC
275
VGE = 15V
13V
11V
90
80
225
9V
IC - Amperes
60
7V
50
11V
200
70
IC - Amperes
VGE = 15V
13V
250
40
30
175
9V
150
125
100
7V
75
20
50
10
5V
25
0
5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
3
6
9
18
21
24
27
30
1.3
100
VGE = 15V
13V
11V
90
80
VGE = 15V
1.2
1.1
VCE(sat) - Normalized
9V
70
IC - Amperes
15
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
60
7V
50
40
30
I
C
= 100A
1.0
0.9
0.8
I
C
= 50A
I
C
= 25A
0.7
0.6
20
5V
10
0.5
0.4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25
5.0
50
VCE - Volts
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
90
8.0
7.5
TJ = 25ºC
80
7.0
70
IC - Amperes
6.5
VCE - Volts
12
VCE - Volts
VCE - Volts
6.0
5.5
I
C
= 100A
5.0
60
50
TJ = 125ºC
25ºC
- 40ºC
40
30
4.5
50A
20
4.0
10
3.5
25A
3.0
0
5
6
7
8
9
10
11
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
12
13
14
15
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
IXGH50N120C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
60
16
TJ = - 40ºC
55
50
VCE = 600V
12
I G = 10mA
I C = 50A
45
25ºC
40
VGE - Volts
g f s - Siemens
14
35
125ºC
30
25
20
15
10
8
6
4
10
2
5
0
0
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
160
180
200
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
110
90
80
1,000
IC - Amperes
Capacitance - PicoFarads
100
Cies
Coes
100
50
40
20
f = 1 MHz
10
10
5
60
30
Cres
0
70
10
15
20
25
30
35
40
TJ = 125ºC
RG = 2Ω
dV / dt < 10V / ns
0
200
400
600
VCE - Volts
800
1000
1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_50N120C3(7N)6-03-08
IXGH50N120C3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
6.0
Eon -
Eoff
5.5
---
12
4.5
11
4.0
9
Eoff
TJ = 125ºC , VGE = 15V
3.5
7
3.0
6
I C = 40A
2.5
1.5
3
4
5
6
7
8
9
10
11
12
13
14
6
2.5
5
TJ = 125ºC
2.0
4
1.5
3
1.0
5
2.0
3.0
4
0.5
3
0.0
2
TJ = 25ºC
30
40
RG - Ohms
2.4
450
9
400
8
350
7
2.0
6
1.6
5
1.2
4
0.0
25
35
45
55
65
75
85
95
105
115
600
tf
td(off) - - - -
450
300
400
I
250
300
150
I
250
= 80A
2
50
150
1
125
0
100
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
240
td(off) - - - -
VCE = 600V
200
TJ = 125ºC
180
200
160
150
140
100
120
TJ = 25ºC
50
100
0
80
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
70
80
td(off) - - - -
170
I C = 40A
RG = 2Ω , VGE = 15V
220
300
60
tf
300
t f - Nanoseconds
350
RG = 2Ω , VGE = 15V
180
VCE = 600V
250
160
200
150
150
I
C
= 80A
140
100
130
50
120
0
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
110
125
t d(off) - Nanoseconds
tf
350
t d(off) - Nanoseconds
t f - Nanoseconds
C
RG - Ohms
400
50
350
200
260
40
= 40A
3
450
30
C
200
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
20
500
VCE = 600V
TJ - Degrees Centigrade
250
550
TJ = 125ºC, VGE = 15V
100
I C = 40A
0.4
t f - Nanoseconds
I C = 80A
0.8
80
t d(off) - Nanoseconds
VCE = 600V
2.8
10
Eon - MilliJoules
Eoff - MilliJoules
----
RG = 2Ω , VGE = 15V
3.2
70
500
11
Eon
60
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
4.0
Eoff
50
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
3.6
1
0
20
15
- MilliJoules
8
- MilliJoules
4.0
Eoff - MilliJoules
9
= 80A
7
VCE = 600V
on
C
on
I
8
E
4.5
2
3.5
10
VCE = 600V
E
Eoff - MilliJoules
5.0
----
Eon
RG = 2Ω , VGE = 15V
IXGH50N120C3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
180
td(on) - - - -
55
TJ = 125ºC, VGE = 15V
C
= 80A
45
100
I
C
= 40A
22
50
21
40
20
30
19
20
18
20
10
17
15
0
25
20
0
2
3
4
5
6
7
8
9
10
11
12
13
14
24
60
30
40
TJ = 125ºC, 25ºC
23
35
60
25
VCE = 600V
80
70
40
80
t d(on) - Nanoseconds
I
120
26
RG = 2Ω , VGE = 15V
90
50
VCE = 600V
td(on) - - - -
16
20
15
RG - Ohms
t d(on) - Nanoseconds
140
27
tr
100
t r - Nanoseconds
tr
160
t r - Nanoseconds
110
60
30
40
50
60
70
80
IC - Amperes
90
26
80
25
I C = 80A
70
24
tr
60
td(on) - - - -
RG = 2Ω , VGE = 15V
VCE = 600V
50
40
I
C
23
22
21
= 40A
30
t d(on) - Nanoseconds
t r - Nanoseconds
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
20
20
25
35
45
55
65
75
85
95
105
115
19
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_50N120C3(7N)6-03-08
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