ON MAC12HCN Triacs silicon bidirectional thyristor Datasheet

MAC12HCD, MAC12HCM,
MAC12HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
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TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
Features
•
•
•
•
•
•
•
•
•
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Commutating di/dt and High Immunity to dv/dt @ 125°C
Minimizes Snubber Networks for Protection
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Industry Standard TO-220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Pb−Free Packages are Available*
MT2
MT1
G
MARKING
DIAGRAM
MAC12HCxG
AYWW
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off-State Voltage (Note 1)
(TJ = − 40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12HCD
MAC12HCM
MAC12HCN
VDRM,
VRRM
On-State RMS Current
(All Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
ITSM
100
A
I2t
41
A2sec
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
Value
Unit
V
1
16
W
PG(AV)
0.35
W
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 3
3
400
600
800
PGM
Average Gate Power
(t = 8.3 ms, TC = 80°C)
2
TO−220AB
CASE 221A−09
STYLE 4
1
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC12HCD
TO−220AB
50 Units / Rail
MAC12HCDG
TO−220AB
(Pb−Free)
50 Units / Rail
MAC12HCM
TO−220AB
50 Units / Rail
MAC12HCMG
TO−220AB
(Pb−Free)
50 Units / Rail
MAC12HCN
TO−220AB
50 Units / Rail
MAC12HCNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC12HC/D
MAC12HCD, MAC12HCM, MAC12HCN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.01
2.0
−
−
1.85
10
10
10
−
−
−
50
50
50
−
−
60
−
−
−
−
−
−
60
80
60
0.5
0.5
0.5
−
−
−
1.5
1.5
1.5
(di/dt)c
15
−
−
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
dv/dt
600
−
−
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz
di/dt
−
−
10
A/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM, Gate Open)
IDRM, IRRM
TJ = 25°C
TJ = 125°C
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 17 A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
IH
Latch Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/ms, Gate Open,
TJ = 125°C, f = 250 Hz, CL = 10 mF, LL = 40 mH, with Snubber)
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC12HCD, MAC12HCM, MAC12HCN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
MAC12HCD, MAC12HCM, MAC12HCN
1.20
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
100
Q3
Q2
Q1
10
1
−40 −25 −10
5 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110
1.10
Q3
1.00
0.90
Q1
0.80
Q2
0.70
0.60
0.50
0.40
−40 −25 −10
125
100
LATCHING CURRENT (mA)
HOLDING CURRENT (mA)
125
100
MT2 NEGATIVE
MT2 POSITIVE
10
1
−40 −25 −10
5
20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110
Q2
Q3
Q1
10
1
−40 −25 −10
125
P(AV), AVERAGE POWER DISSIPATION (WATTS)
125
120°, 90°, 60°, 30°
110
95
180°
80
DC
0
2
5
20 35 50
65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 4. Typical Latching Current
versus Junction Temperature
Figure 3. Typical Holding Current
versus Junction Temperature
TC, CASE TEMPERATURE (°C)
110
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
65
5
20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
4
6
8
10
IT(RMS), RMS ON-STATE CURRENT (AMP)
12
20
DC
18
180°
16
120°
14
12
10
8
60°
6
30°
4
2
0
0
Figure 5. Typical RMS Current Derating
2
4
6
8
10
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 6. On-State Power Dissipation
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4
90°
12
MAC12HCD, MAC12HCM, MAC12HCN
TYPICAL @
TJ = 25°C
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
100
MAXIMUM @ TJ = 125°C
10
MAXIMUM @ TJ = 25°C
1
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5
Figure 7. Typical On-State Characteristics
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5
10000
MAC12HCD, MAC12HCM, MAC12HCN
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
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MAC12HC/D
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