NEC NE76118-T1 Gaas mesfet l to s band low noise amplifier Datasheet

GaAs MESFET
L TO S BAND LOW NOISE AMPLIFIER
• LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
25
4
20
Noise Figure, NF (dB)
GA
• HIGH ASSOCIATED GAIN:
13.5 dB typical at 2 GHz
• LG = 1.0 µm, WG = 400 µm
• TAPE & REEL PACKAGING
DESCRIPTION
The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)
plastic surface mount package. The device is fabricated using
ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small
size and weight make it an ideal low noise amplifier transistor
in the 1-4 GHz frequency range. The NE76118 is suitable for
GPS, PCS, WLAN, MMDS, TVRO, and other commercial
applications.
15
3
10
5
2
0
1
Associated Gain, GA (dB)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, ID= 10 mA
FEATURES
• LOW NOISE FIGURE:
0.8 dB typical at 2 GHz
NE76118
NF
0
0.5
1
2
3
4
5 6 7 8 910
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
GA
P1dB
G1dB
IDSS
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 3 V, ID = 10 mA
f = 2 GHz
f = 4 GHz
Associated Gain at VDS = 3 V, ID = 10 mA
f = 2 GHz
f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 2 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
NE76118
18
UNITS
MIN
dB
dB
dB
dB
9.5
TYP
MAX
0.8
0.9
1.4
13.5
10.5
dBm
dBm
12
14
Gain at P1dB, f = 2 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dB
dB
13
14
Saturated Drain Current at VDS = 3 V, VGS = 0 V
mA
30
100
VP
Pinch Off Voltage at VDS = 3 V, ID = 100 µA
V
-3.0
-0.5
gm
Transconductance at VDS = 3 V, ID = 10 mA
mS
20
Gate to Source Leakage Current at VGS = -5 V
µA
IGSO
45
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
NE76118
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
VDS
Drain to Source Voltage
V
5
VGDO
Gate to Drain Voltage
V
-5
VGSO
Gate to Source Voltage
V
-6
IDSS
IDS
Drain Current
mA
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
mW
130
PT
Total Power Dissipation
VCE = 3 V, IC = 10 mA
RATINGS
TCH
TYPICAL NOISE PARAMETERS (TA = 25°C)
Note:
1.Operation in excess of any one of these parameters may result
in permanent damage.
ΓOPT
FREQ.
NFOPT
GA
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.55
0.65
0.75
0.85
0.93
1.00
1.08
1.15
1.22
1.30
23.0
18.0
16.0
14.2
12.9
11.7
10.7
10.0
9.2
8.5
0.77
0.78
0.80
0.79
0.78
0.76
0.72
0.64
0.45
0.28
9
26
38
42
47
55
64
76
94
109
0.64
0.50
0.41
0.35
0.30
0.26
0.23
0.20
0.18
0.16
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
UNITS
VDS
Drain to Source Voltage
V
3
4
Drain Current
mA
10
20
Input Power
dBm
ID
PIN
MIN
TYP MAX
0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
200
Drain Current, IDS (mA)
Total Power Dissipation, PT (mW)
250
150
100
50
0
0
50
100
150
80
VGS
0
60
-0.2
40
-0.4
20
-0.6
0
-0.8
-1.0
1
0
200
2
3
4
5
Drain to Source Voltage, VDS (V)
Ambient Temperature, TA (˚C)
FORWARD INSERTION GAIN vs.
DRAIN CURRENT
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
25
VDS = 3 V
VDS = 3 V
80
Drain Current, IDS (mA)
20
f = 1 GHz
60
f = 2 GHz
15
40
10
20
0
-2.0
5
0
-1.0
Gate to Source Voltage, VGS (V)
0
1
2
3
5
7
Drain Current, ID (mA)
10
20
NE76118
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 2 V, IDS = 10 mA
FREQUENCY
(MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
S11
MAG
1.001
0.998
0.944
0.988
0.980
0.972
0.961
0.951
0.937
0.924
0.846
0.761
0.678
0.604
0.536
0.472
0.414
0.356
S21
ANG
-3.3
-6.5
-9.7
-12.9
-16.1
-19.3
-22.5
-25.7
-28.9
-32.0
-47.4
-61.7
-74.3
-85.0
-94.7
-103.8
-113.5
-123.7
MAG
3.816
3.800
3.785
3.773
3.763
3.741
3.717
3.689
3.651
3.615
3.403
3.138
2.856
2.605
2.397
2.227
2.106
2.011
S12
ANG
176.6
173.4
170.3
167.0
163.8
160.5
157.4
154.3
151.2
148.1
133.3
119.7
107.6
97.0
87.8
79.4
71.4
63.1
MAG
S22
ANG
0.004
0.010
0.014
0.019
0.024
0.028
0.033
0.037
0.042
0.046
0.065
0.081
0.093
0.103
0.115
0.128
0.144
0.165
80.8
89.7
85.1
83.3
82.6
80.2
79.9
78.0
76.7
74.7
68.5
63.8
60.6
59.5
60.1
61.0
62.4
63.8
MAG
0.730
0.728
0.726
0.724
0.721
0.716
0.712
0.707
0.701
0.694
0.659
0.621
0.590
0.570
0.554
0.536
0.515
0.492
K
ANG
-1.2
-2.2
-3.4
-4.5
-5.6
-6.8
-7.9
-9.0
-10.2
-11.3
-16.7
-21.5
-24.8
-26.9
-27.5
-27.2
-26.4
-26.0
MAG1
(dB)
0.07
0.02
0.10
0.15
0.17
0.22
0.24
0.28
0.31
0.36
0.51
0.67
0.82
0.94
1.04
1.11
1.14
1.14
29.4
25.9
24.3
23.0
21.9
21.2
20.5
19.9
19.4
18.9
17.2
15.9
14.9
14.0
12.1
10.4
9.4
8.6
K
MAG1
VDS = 2 V, IDS = 30 mA
FREQUENCY
S11
S21
S12
S22
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
1.001
0.996
0.990
0.982
0.971
0.959
0.944
0.929
0.911
0.893
0.794
0.693
0.602
0.525
0.458
0.399
0.348
0.299
-3.7
-7.4
-10.9
-14.5
-18.1
-21.7
-25.2
-28.6
-32.1
-35.4
-51.5
-65.8
-77.8
-87.6
-95.9
-103.6
-111.9
-120.4
5.136
5.109
5.074
5.045
5.008
4.957
4.903
4.838
4.762
4.689
4.276
3.827
3.398
3.032
2.738
2.500
2.329
2.196
176.2
172.4
168.8
165.2
161.6
157.9
154.3
151.0
147.5
144.1
128.5
114.7
102.7
92.5
83.8
76.0
68.6
61.1
0.004
0.009
0.013
0.016
0.021
0.024
0.028
0.032
0.036
0.039
0.056
0.070
0.083
0.097
0.111
0.127
0.147
0.172
84.5
90.1
87.6
85.2
84.7
81.8
81.0
79.8
79.7
77.5
73.1
70.4
68.2
68.0
68.1
68.7
68.9
68.6
0.650
0.650
0.647
0.645
0.641
0.637
0.633
0.628
0.623
0.617
0.587
0.558
0.538
0.531
0.526
0.520
0.508
0.494
-1.1
-2.0
-2.9
-3.8
-4.8
-5.7
-6.7
-7.6
-8.5
-9.4
-13.6
-17.4
-19.7
-21.2
-21.5
-21.1
-20.3
-19.6
(dB)
0.03
0.05
0.12
0.19
0.22
0.29
0.33
0.38
0.41
0.47
0.65
0.81
0.95
1.04
1.10
1.13
1.13
1.10
31.3
27.7
26.1
25.1
23.7
23.1
22.4
21.9
21.3
20.8
18.9
17.4
16.1
13.8
12.0
10.8
9.9
9.1
K
MAG1
VDS = 3 V, IDS = 10 mA
FREQUENCY
S11
S21
S12
S22
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
1.001
0.998
0.993
0.988
0.979
0.972
0.961
0.951
0.937
0.924
0.847
0.762
0.679
0.605
0.536
0.471
0.412
0.355
-3.2
-6.5
-9.6
-12.8
-15.9
-19.2
-22.3
-25.5
-28.6
-31.7
-46.9
-61.2
-73.6
-84.3
-93.8
-102.7
-111.9
-121.2
3.840
3.825
3.808
3.795
3.786
3.764
3.741
3.712
3.675
3.638
3.427
3.162
2.877
2.622
2.410
2.237
2.115
2.022
176.6
173.4
170.3
167.1
163.9
160.6
157.5
154.5
151.3
148.2
133.5
120.0
107.9
97.3
88.3
80.0
72.1
64.0
0.003
0.009
0.012
0.017
0.022
0.025
0.029
0.033
0.037
0.041
0.057
0.071
0.080
0.089
0.099
0.110
0.126
0.147
95.2
90.4
85.4
84.7
83.3
80.9
79.7
77.8
77.5
75.2
69.3
65.2
62.3
61.9
63.5
65.5
68.1
70.6
0.763
0.763
0.761
0.759
0.756
0.752
0.748
0.743
0.738
0.732
0.698
0.662
0.632
0.613
0.597
0.582
0.566
0.548
-1.3
-2.2
-3.1
-4.1
-5.1
-6.1
-7.2
-8.2
-9.2
-10.3
-15.2
-19.6
-22.7
-24.5
-25.1
-24.6
-23.7
-23.1
(dB)
-0.11
0.01
0.10
0.13
0.17
0.21
0.25
0.29
0.31
0.36
0.52
0.68
0.84
0.98
1.08
1.15
1.17
1.15
30.6
26.2
24.9
23.5
22.4
21.7
21.1
20.5
20.0
19.5
17.8
16.5
15.5
14.7
12.2
10.7
9.8
9.1
NE76118
TYPICAL SCATTERING PARAMETERS (TA = 25 °C)
VDS = 3 V, IDS = 30 mA
FREQUENCY
S11
(MHz)
S21
MAG
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
ANG
0.999
0.996
0.990
0.981
0.970
0.959
0.944
0.928
0.910
0.892
0.793
0.694
0.603
0.527
0.461
0.402
0.352
0.305
MAG
-3.6
-7.4
-10.8
-14.5
-18.0
-21.6
-25.1
-28.5
-31.9
-35.3
-51.2
-65.3
-77.1
-86.7
-94.7
-102.0
-109.5
-117.2
5.174
5.143
5.106
5.076
5.037
4.984
4.929
4.861
4.786
4.709
4.290
3.836
3.401
3.032
2.735
2.497
2.327
2.199
S12
ANG
176.2
172.3
168.8
165.1
161.5
157.8
154.3
150.9
147.4
144.0
128.4
114.6
102.7
92.5
84.0
76.3
69.1
61.8
MAG
S22
ANG
0.002
0.008
0.011
0.015
0.019
0.022
0.025
0.029
0.032
0.035
0.050
0.063
0.074
0.085
0.098
0.113
0.132
0.156
MAG
102.3
92.4
84.5
84.5
83.6
81.3
81.1
80.1
79.3
77.9
73.3
70.7
69.5
69.9
70.8
72.2
73.4
74.1
0.695
0.695
0.694
0.691
0.688
0.683
0.680
0.674
0.669
0.663
0.633
0.604
0.584
0.574
0.570
0.564
0.557
0.545
K
ANG
-1.0
-1.9
-2.7
-3.7
-4.6
-5.5
-6.4
-7.3
-8.2
-9.1
-13.0
-16.6
-18.9
-20.3
-20.6
-20.1
-19.2
-18.6
MAG1
(dB)
-0.11
0.03
0.16
0.19
0.24
0.29
0.33
0.37
0.42
0.46
0.66
0.83
0.97
1.07
1.12
1.15
1.13
1.10
33.9
28.3
26.6
25.4
24.2
23.6
22.9
22.3
21.7
21.3
19.3
17.9
16.6
13.9
12.3
11.1
10.2
9.6
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
OUTLINE DIMENSIONS (Units in mm)
ORDERING INFORMATION
PART NUMBER
QTY
PACKAGE OUTLINE 18
2.1 ± 0.2
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
0.65
2
0.60
V52
2.0 ± 0.2
1
3 0.65
1.3
NE76118-T1
3 K pcs per Reel1
NE76118-T2
3 K pcs per Reel2
Notes:
1. Embossed tape 8 mm wide. Pin 3 (source) and pin 4 (drain) face
perforated side of the tape.
2. Embossed tape 8 mm wide. Pin 1 (source) and pin 2 (gate) face
perforated side of the tape.
0.65
4
+0.10
0.4 -0.05
0.3
0.9 ± 0.1
0 to 0.1
+0.10
0.15 -0.05
Pin Connections
1. Source
2. Gate
3. Source
4. Drain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
7/18/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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