DIODES ZXMP2120E5TA

ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A 4 pin SOT223 version is also available (ZXMP2120G4).
SOT23-5
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT23-5 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
• Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE
ZXMP2120E5TA
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
N/C
7
8mm embossed
3,000 units
D
N/C
DEVICE MARKING
• P120
S
G
PINOUT - TOP VIEW
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ZXMP2120E5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
-200
V
V GS
±20
V
Continuous Drain Current (V GS =10V; T amb =25°C) (a) I D
I DM
Pulsed Drain Current (c)
-122
mA
-0.7
A
Pulsed Source Current (Body Diode) (c)
I SM
-0.7
A
PD
0.75
W
6
mW/°C
-55 to +150
°C
Gate Source Voltage
Power Dissipation at T amb =25°C
Linear Derating Factor
(a)
Operating and Storage Temperature Range
T j : T stg
LIMIT
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
VALUE
UNIT
167
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
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ZXMP2120E5
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-200
Gate-Source Threshold Voltage
V GS(th)
-1.5
Gate-Body Leakage
Zero Gate Voltage Drain Current
TYP.
MAX. UNIT CONDITIONS.
STATIC
On-State Drain Current (1)
I D =-1mA, V GS =0V
-3.5
V
I =-1mA, V DS = V GS
I GSS
20
nA
V GS = ⫾20V, V DS =0V
I DSS
-10
-100
␮A
µA
V DS =-200 V, V GS =0
V DS =-160 V, V GS =0V,
T=125°C (2)
mA
V DS =-25 V, V GS =-10V
Ω
VGS =-10V, I D =-150mA
mS
V DS =-25V,I D =-150mA
I D(on)
Static Drain-Source On-State Resistance
Forward Transconductance
V
(1)(2)
(1)
-300
R DS(on)
28
g fs
50
D
DYNAMIC
Input Capacitance (2)
C iss
100
pF
Output Capacitance (2)
C oss
25
pF
Reverse Transfer Capacitance (2)
C rss
7
pF
Turn-On Delay Time (2) (3)
t d(on)
7
ns
Rise Time (2)(3)
tr
15
ns
Turn-Off Delay Time (2) (3)
t d(off)
12
ns
tf
15
ns
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING
Fall Time
(2)(3)
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
ISSUE 2 - SEPTEMBER 2006
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V DD =-25V, I D =-150mA
ZXMP2120E5
TYPICAL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2006
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ZXMP2120E5
CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2006
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ZXMP2120E5
PACKAGE OUTLINE
PAD LAYOUT DETAILS
0.95
0.375
1.06
0.042
2.2
0.087
mm
inches
0.65
0.025
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
Millimeters
DIM
MIN.
MAX.
MIN.
MAX.
0.90
1.45
0.0354
0.0570
A1
-
0.15
-
A2
0.90
1.30
b
0.20
C
0.09
A
D
Inches
DIM
2.70
MIN.
MAX.
MIN.
MAX.
E
2.20
3.20
0.0866
0.1181
0.0059
E1
1.30
1.80
0.0511
0.0708
0.0354
0.0511
e
0.95 REF
0.0374 REF
0.50
0.0078
0.0196
e1
1.90 REF
0.0748 REF
0.26
0.0035
0.0102
L
0.10
0.60
0.0039
0.0236
a
0°
30°
0°
30°
3.10
0.1062
0.1220
© Zetex Semiconductors plc 2006
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