HDSEMI BZT52C22W Sod 123 plastic-encapsulate diode Datasheet

B Z T52C2V4W
THRU B Z T52C75W
SOD1 23 Plastic-Encapsulate Diodes
Zener Diodes
Features
●Pd
●Vz
SOD1 23
500mW
2.4V- 75V
Applications
● Stabilizing Voltage
Unit
Pd
mW
Zener current
IZ
mA
PV /VZ
Maximum junction temperature
Tj
℃
150
Tstg
℃
-65 to +150
Power dissipation
Storage temperature range
Conditions
Max
Symbol
Item
TA=25℃
500
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Symbol
Thermal resistance
RθJA
Forward voltage
VF
Unit
Conditions
Max
℃/W
Between junction and ambient
340
V
IF =10mA
0.9
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
Zener Voltage Range
Type
Marking
Code
1)
Reverse Leakage
Current
Dynamic Impedance
Vznom
VZT
at IZT
ZZT
at IZT
ZZK
at IZK
IR
at VR
V
V
mA
Max. (Ω)
mA
Max. (Ω)
mA
Max. (μA)
V
BZT52C2V4W
MH
2.4
2.2...2.6
5
100
5
600
1
50
1
BZT52C2V7W
MJ
2.7
2.5...2.9
5
100
5
600
1
20
1
BZT52C3V0W
MK
3.0
2.8...3.2
5
95
5
600
1
10
1
BZT52C3V3W
MM
3.3
3.1...3.5
5
95
5
600
1
5
1
BZT52C3V6W
MN
3.6
3.4...3.8
5
90
5
600
1
5
1
BZT52C3V9W
MP
3.9
3.7...4.1
5
90
5
600
1
3
1
BZT52C4V3W
MR
4.3
4...4.6
5
90
5
600
1
3
1
BZT52C4V7W
MX
4.7
4.4...5
5
80
5
500
1
3
2
BZT52C5V1W
MY
5.1
4.8...5.4
5
60
5
480
1
2
2
BZT52C5V6W
MZ
5.6
5.2...6
5
40
5
400
1
1
2
BZT52C6V2W
NA
6.2
5.8...6.6
5
10
5
150
1
3
4
BZT52C6V8W
NB
6.8
6.4...7.2
5
15
5
80
1
2
4
BZT52C7V5W
NC
7.5
7...7.9
5
15
5
80
1
1
5
BZT52C8V2W
ND
8.2
7.7...8.7
5
15
5
80
1
0.7
5
BZT52C9V1W
NE
9.1
8.5...9.6
5
15
5
100
1
0.5
6
BZT52C10W
NF
10
9.4...10.6
5
20
5
150
1
0.2
7
BZT52C11W
NH
11
10.4...11.6
5
20
5
150
1
0.1
8
BZT52C12W
NJ
12
11.4...12.7
5
25
5
150
1
0.1
8
BZT52C13W
NK
13
12.4...14.1
5
30
5
170
1
0.1
8
BZT52C15W
NM
15
13.8...15.6
5
30
5
200
1
0.1
10.5
BZT52C16W
NN
16
15.3...17.1
5
40
5
200
1
0.1
11.2
BZT52C18W
NP
18
16.8...19.1
5
45
5
225
1
0.1
12.6
BZT52C20W
NR
20
18.8...21.2
5
55
5
225
1
0.1
14
BZT52C22W
NX
22
20.8...23.3
5
55
5
250
1
0.1
15.4
BZT52C24W
NY
24
22.8...25.6
5
70
5
250
1
0.1
16.8
BZT52C27W
NZ
27
25.1...28.9
2
80
2
300
0.5
0.1
18.9
BZT52C30W
PA
30
28...32
2
80
2
300
0.5
0.1
21
BZT52C33W
PB
33
31...35
2
80
2
325
0.5
0.1
23.1
BZT52C36W
PC
36
34...38
2
90
2
350
0.5
0.1
25.2
BZT52C39W
PD
39
37...41
2
130
2
350
0.5
0.1
27.3
BZT52C43W
6A
43
40...46
2.5
130
2
500
1
2
33
BZT52C47W
6B
47
44...50
2.5
150
2
500
1
2
36
BZT52C51W
6C
51
48...54
2.5
180
2
500
1
1
39
BZT52C56W
6D
56
52...60
2.5
180
2
500
1
1
43
BZT52C62W
6E
62
58...66
2.5
200
2
500
1
0.2
47
BZT52C68W
6F
68
64...72
2.5
250
2
500
1
0.2
52
BZT52C75W
6H
75
70...79
2.5
300
2
500
1
0.2
57
1)
VZT is tested with pulses (20 ms).
High Diode Semiconductor
2
Typical Characteristics
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Tj=25o C
3V9
2V7
6V8
4V7
Iz
3V3
40
8V2
5V6
30
20
Test current Iz
5mA
10
0
0
1
2
3
4
5
6
7
9
8
10 V
Vz
Breakdown characteristics
Tj = constant (pulsed)
mA
30
Tj=25 oC
10
12
Iz
15
20
18
22
27
Test current Iz
5mA
10
33
0
0
10
20
30
40 V
Vz
Power Dissipation: Ptot (mW)
600
500
400
300
200
100
0
0
25
50
75
125
100
150
Ambient Temperature: Ta ( C)
O
Power Dissipation vs Ambient Temperature
High Diode Semiconductor
3
SOD-1 23 Package Outline Dimensions
SOD-1 23 Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
4
Reel Taping Specifications For Surface Mount Devices-SOD123
1.50
High Diode Semiconductor
5
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