ON MMDJ3P03BJT Plastic power transistor Datasheet

MMDJ3P03BJT
Plastic Power Transistors
SO−8 for Surface Mount Applications
• Collector −Emitter Sustaining Voltage —
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
http://onsemi.com
• High DC Current Gain —
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage —
•
VCE(sat) = 0.24 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
Miniature SO−8 Surface Mount Package − Saves Board Space
DUAL BIPOLAR
POWER TRANSISTOR
PNP SILICON
30 VOLTS, 3 AMPERES
(SO−8)
CASE 751−07
Style 16
Emitter−1
1
8
Collector−1
Base−1
2
7
Collector−1
Emitter−2
3
6
Collector−2
Base−2
4
5
Collector−2
Top View
Pinout
C
E
B
C
E
B
Schematic
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
1
Publication Order Number:
MMDJ3P03BJT/D
MMDJ3P03BJT
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCB
45
Vdc
VCEO
30
Vdc
VEB
± 6.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Base Current — Continuous
IB
1.0
Adc
TJ, Tstg
– 55 to + 150
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance − Junction to Ambient on 1″ sq. (645 sq. mm)
Collector pad on FR−4 board material with one die operating.
Thermal Resistance − Junction to Ambient on 0.012″ sq. (7.6 sq. mm)
Collector pad on FR−4 board material with one die operating.
RθJA
Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm)
Collector pad on FR−4 board material with one die operating.
Derate above 25_C
PD
Maximum Temperature for Soldering
TL
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
http://onsemi.com
2
100
_C/W
185
1.25
10
Watts
mW/_C
260
_C
MMDJ3P03BJT
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
—
—
6.0
—
—
—
—
—
—
20
200
—
—
10
—
—
—
0.15
—
—
0.21
0.24
0.55
—
—
1.25
—
—
1.10
125
110
90
260
—
—
—
—
—
—
100
150
—
135
—
—
110
—
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
Emitter−Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
Vdc
Vdc
μAdc
μAdc
ON CHARACTERISTICS(1)
Collector−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
Base−Emitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 8.0 Vdc)
Cib
Current−Gain — Bandwidth Product(2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
http://onsemi.com
3
pF
pF
MHz
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V)
MMDJ3P03BJT
1.00
0.75
IC = 3.0 A
0.50
0.8 A
1.2 A
0.5 A
0.25 A
10
1.0
100
0.8 A
0.5 A
0.25 A
0
1000
100
1000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
1000
150°C
HFE, DC CURRENT GAIN
150°C
25°C
100
−55 °C
25°C
100
−55 °C
VCE = 4.0 V
VCE = 1.0 V
10
10
0.1
10
1.0
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. DC Current Gain
10
1.0
10
IC/IB = 10
VBE(sat)
1.0
V, VOLTAGE (V)
V, VOLTAGE (V)
10
1.0
1000
HFE, DC CURRENT GAIN
IC = 1.2 A
0.125
0.25
0
0.25
VBE(sat)
0.1
0.1
VCE(sat)
VCE(sat)
IC/IB = 50
0.01
0.01
0.1
1.0
10
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “On” Voltages
Figure 6. “On” Voltages
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4
10
MMDJ3P03BJT
1.2
1000
V, VOLTAGE (V)
0.8
C, CAPACITANCE (pF)
−55 °C
25°C
150°C
0.4
Cob
100
VCE = 4.0 V
0
10
1.0
10
0.1
10
VR, REVERSE VOLTAGE (V)
Figure 7. VBE(on) Voltage
Figure 8. Output Capacitance
100
10
1000
0.5 ms
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
100
1.0
5.0 ms
100 ms
0.1
0.01
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECONDARY BREAKDOWN LIMIT
0.001
10
0.1
10
1.0
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Current−Gain Bandwidth Product
Figure 10. Active Region Safe Operating Area
PD, POWER DISSIPATION (W)
1.5
1.0
TA
0.5
0
50
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
2.0
25
1.0
IC, COLLECTOR CURRENT (A)
IC , COLLECTOR CURRENT (A)
f t , CURRENT−GAIN BANDWIDTH PRODUCT
0.1
75
100
125
150
T, TEMPERATURE (°C)
Figure 11. Power Derating
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5
MMDJ3P03BJT
r (t) , EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
RθJA(t) = r(t) θJA
θJA = 185°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) θJA(t)
SINGLE PULSE
0.001
0.0001
0.0001
0.001
0.01
0.1
1.0
t, TIME (seconds)
Figure 12. Thermal Response
http://onsemi.com
6
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
1000
MMDJ3P03BJT
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE W
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
−Y−
K
G
C
N
X 45 _
SEATING
PLANE
−Z−
H
0.10 (0.004)
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
STYLE 16:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0_
8_
0.010
0.020
0.228
0.244
EMITTER, DIE #1
BASE, DIE #1
EMITTER, DIE #2
BASE, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #1
COLLECTOR, DIE #1
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