DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance • 22mΩ @ VGS = 10V • 33mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072grams (approximate) SOP-8L D1 D1 S1 TOP VIEW D2 G1 D1 S2 D2 G2 D2 TOP VIEW Internal Schematic G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Symbol VDSS VGSS Units V V IDM Value 30 ±20 6.9 5.8 30 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Symbol PD RθJA Value 2 62.5 Unit W °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Notes: 1. 2. 3. 4. Device mounted on 2 oz. Copper pads on FR-4 PCB with RθJA = 62.5°C/W No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3033LSD Document number: DS31262 Rev. 7 - 2 1 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3033LSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1 2.1 V 22 33 mΩ ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A VDS =5V, ID = 6.9A VGS = 0V, IS = 1A Static Drain-Source On-Resistance RDS (ON) ⎯ Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS gfs VSD ⎯ 0.5 ⎯ ⎯ ⎯ 7 ⎯ Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 725 114 92 0.89 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg ⎯ ⎯ nC Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 6.4 13.0 1.9 3.2 11 7 63 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VDS = 15V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 15V, ID =5A VGS = 10V, VDS = 15V, ID = 6.9A VGS = 4.5V, VDS = 15V, ID = 6.9A VGS = 4.5V, VDS = 15V, ID = 6.9A VDD = 15V, VGS = 10V, RD = 1.8Ω, RG = 6Ω 5. Short duration pulse test used to minimize self-heating effect. 12 10 VGS = 10V VGS = 4.5V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 8 6 4 VGS = 3.0V 6 4 TA = 85°C VGS = 1.5V VGS = 1.0V VGS = 2.5V 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN3033LSD Document number: DS31262 Rev. 7 - 2 T A = 25°C TA = -55°C 0 1.5 0 0 TA = 150°C T A = 125°C 2 2 VDS = 5V 3 2 2.5 3 VGS, GATE SOURCE VOLTAGE (V) 3.5 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com July 2009 © Diodes Incorporated 0.1 VGS = 4.5V VGS = 10V 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3033LSD TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0.01 10 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 10,000 1.6 f = 1MHz 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 VGS = 10V ID = 6.9A 1.3 1.2 VGS = 4.5V ID = 5A 1.1 1.0 0.9 1,000 Ciss 100 Coss Crss 0.8 0.7 10 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0 30 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 VGS, GATE-SOURCE VOLTAGE (V) 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 8 ID = 9A 6 ID = 7A 4 2 0 0 2 4 6 8 10 12 Qg - TOTAL GATE CHARGE (nC) Fig. 7 Gate Charge DMN3033LSD Document number: DS31262 Rev. 7 - 2 14 2.2 1.9 ID = 250µA 1.6 1.3 1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 3 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3033LSD IS, SOURCE CURRENT (A) 10 1 0.1 TA = 150°C TA = 125°C 0.01 TA = 85°C TA = 25°C 0.001 T A = -55°C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0.9 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 105°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response Ordering Information (Note 6) Part Number DMN3033LSD-13 Notes: Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ( Top View ) 8 5 Logo N3033LD Part no. YY WW 1 DMN3033LSD Document number: DS31262 Rev. 7 - 2 4 4 of 6 www.diodes.com Xth week: 01~52 Year : "07" =2007 "08" =2008 July 2009 © Diodes Incorporated DMN3033LSD 0.254 Package Outline Dimensions E1 E A1 L GAUGE PLANE SEATING PLANE DETAIL A 7°~9° h 45° DETAIL A A2 A A3 b e D SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.30 1.50 A3 0.20 Typ. b 0.3 0.5 D 4.80 5.30 E 5.79 6.20 E1 3.70 4.10 e 1.27 Typ. h 0.35 L 0.38 1.27 0° 8° θ All Dimensions in mm Suggested Pad Layout X Dimensions Z C X Y Z Value (in mm) 5.1 1.27 0.41 1.0 C Y DMN3033LSD Document number: DS31262 Rev. 7 - 2 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3033LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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