DIODES FCX605TA

FCX605
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
SUMMARY
VCEO=120V; VCE(sat)= 1V; IC= 1A
DESCRIPTION
This new NPN Darlington transistor provides users with very efficeint
performance combining low VCE (sat) and very high Hfe to give extremely low
on state losses at 120V operation. This makes it deal for use in a variety of
efficient driving functions including motors, lamps relays and solenoids and
will also benefit circuits requiring high output current switching.
SOT 89
FEATURES
•
Low Saturation Voltage
•
Hfe min 2K @ 1A
•
IC= 1A Continuous
•
SOT89 package with Plot 1W
•
Specification is also available in Eline and SOT223 package outlines
C
B
APPLICATIONS
E
•
Various driving functions
- Lamps
- Motors
- Relays and solenoids
•
High output current switches
E
C
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
FCX605TA
7
TAPE WIDTH
(mm)
QUANTITY
PER REEL
12mm embossed
1000 units
DEVICE MARKING
605
ISSUE 2 - SEPTEMBER 2005
1
C
B
Top View
FCX605
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT NPN
UNIT
Collector-Base Voltage
V CBO
140
V
Collector-Emitter Voltage
V CEO
120
V
Emitter-Base Voltage
V EBO
10
V
Peak Pulse Current
I CM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.8
22
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
125
°C/W
Junction to Ambient (b)
R θJA
45
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 2 - SEPTEMBER 2005
2
FCX605
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V (BR)CBO
Collector-Emitter Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
140
V
I C =100␮A
V (BR)CEO
120
V
I C =10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
10
V
I E =100␮A
Collector Cut-Off Current
I CBO
100
nA
V CB =10V
10
µA
V CB = 120V
Tamb = 100°C
Emitter Cut-Off Current
I EBO
0.1
µA
V EB = 8V
Collector Emitter Cut-Off Current
I CES
10
µA
V CES =120V
Collector-Emitter Saturation
Voltage
V CE(sat)
Base-Emitter Saturation Voltage
1
V
1.5
V
I C =250mA, I B = 0.25mA*
I C =1A, I B =1mA*
V BE(sat)
1.8
V
I C =1A, I B = 1mA*
Base-Emitter Turn-On Voltage
V BE(on)
1.7
V
I C = 1A, V CE = 5V*
Static Forward Current Transfer
Ratio
h FE
Transition Frequency
fT
Input Capacitance
C ibo
Output Capacitance
2K
5K
2K
0.5
I C = 50mA, V CE = 5V*
I C =500mA, V CE = 5V*
I C =1A, V CE = 5V*
I C =2A, V CE = 5V*
100K
150
MHz
I C =100mA, V CE =10V
f=20MHz
90
pF
V CB =500mV, f=1MHz
C obo
15
pF
V CB =10V, f=1MHz
Turn-On Time
t (on)
0.5
µs
I C =500mA, V CE =10V
I B1 =I B2 =0.5mA
Turn-Off Time
t (off)
1.6
µs
I C =500mA, V CE =10V
I B1 =I B2 =0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Nb. Spice parameter data is available upon request for this device.
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FCX605
NPN TYPICAL CHARACTERISTICS
1.8
-55 C
+25 C
+100 C
+175 C
1.4
2.5
hFE - Gain normalised to 1 Amp
VCE(sat) - (Volts)
1.6
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
0.01
1
10
VCE=5V
2.0
1.5
1.0
0.5
0.001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
2.2
2.2
-55 C
+25 C
+100 C
+175 C
2.0
1.8
1.8
1.6
1.4
1.2
IC/IB=100
1.0
1.6
1.4
1.2
1.0
0.8
0.8
0.6
0.6
0.4
0.01
10
-55 C
+25 C
+100 C
2.0
VBE - (Volts)
VBE(sat) - (Volts)
0.1
-55 C
+25 C
+100 C
0.1
1
VCE=5V
0.4
10
0.01
IC - Collector Current (Amps)
0.1
1
10
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test at Tamb=25 C
IC - Collector Current (Amps)
10
1.0
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
ZT
X6
04
ZTX605
0.01
1
10
100
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
ISSUE 2 - SEPTEMBER 2005
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FCX605
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
2.4
4.0
1.5
1.2
1.0
3.2
1.2
SOT89 pattern.
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
c
0.28
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
© Zetex Semiconductors plc 2005
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ISSUE 2 - SEPTEMBER 2005
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