ES3A-ES3J 3.0A Surface Mount Super-Fast Rectifier Features · Plastic package has underwrites laboratory flammability Classification 94V-0 · Glass passivated chip junction · Built-in strain relief, · Fast switching speed for high efficiency SMC B · High temperature soldering guaranteed: A 260 C/10 seconds C Mechanical Data D J · Case: JEDED DO-214AB transfer molded plastic · Terminals: Solder plated, solderable per H · MIL-STD-750, method 2026 · Polarity: Color band denotes cathode end G E Dim Min Max A 5.59 6.22 B 6.60 7.11 C 2.75 3.18 D 0.15 0.31 E 7.75 8.13 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm · Weight: 0.007 ounce, 0.25 gram Maximum Ratings • • @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL=100 Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) SYMBOLS VRRM VRMS VDC ES3D 200 140 200 ES3E 300 210 300 ES3G 400 280 400 ES3J 600 420 600 UNIT Volts Volts Volts Amps IFSM 100 Amps VF IR Typical Reverse Recovery Time Test conditions IF =0.5A, IR =1.0A, IRR =0.25A trr Typical Junction Capacitance (Measured at 1.0MHz and applied reverse voltage of 4.0V) CJ Storage Temperature Range ES3C 150 105 150 3.0 Maximum DC Reverse Current at rated TA = 25 DC Blocking Voltage per element TA = 125 Operating Junction Temperature Range ES3B 100 70 100 I(AV) Maximum Instantaneous Forward Voltage @ 3.0A Typical Thermal Resistance (Note 1) ES3A 50 35 50 0.95 1.25 5.0 300 1.7 A 35 45 RθJA RθJL TJ TSTG Notes: 1. Thermal resistance from Junction to ambient and from junction to lead mounted on P.C.B. with 0.3”×0.3”(8.0mm × 8.0mm) copper pad areas. 1of2 nS 30 55 17 (-55 to +150) (-55 to +150) Volts pF /W FIG.2-MAXIMUM NON-REPETITIVE PEAK DERATING CURVE FORWARD SURGE CURRENT PEAK FORWARD SURGE 3.0 Single Phase Half Wave 60Hz Inductive or Resistive Load 1.0 0.375″(9.5mm) Lead Length 150 8.3ms Single Half Sine-Wave CURRENT, (A) 2.0 (A) AVERAGE FORWARD CURRENT, FIG.1-TYPICAL FORWARD CURRENT (JEDEC Method) Tj = Tjmax 100 50 1 Cycle 0 0 25 50 100 75 175 150 125 0 1 2 AMBIENT TEMPERATURE, ( C) 4 6 8 10 40 20 60 100 NUMBER OF CYCLES AT 60 Hz FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS TJ =25 C Pulse Width=300us 0.1 1% Duty Cycle 0.01 10 1.0 (μA) 3J 3E ES ES INSTANTANEOUS REVERSE CURRENT, -3 G ° ES 3A- 3D 1.0 (A) INSTANTANEOUS FORWARD CURRENT, 10 TJ =125 C 0.1 TJ =25 ° 0.01 0 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 40 60 120 100 80 ° 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) INSTANTANEOUS FORWARD VOLTAGE,(V) FIG.5-TYPICAL JUNCTION CAPACITANCE ℃ JUNCTION CAPACITANCE,(pF) 1000 F1G.6-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC TRR 50Ω 10Ω NONINDUCTIVE NONINDUCTIVE +0.5A (-) 100 D.U.T. (+) 25 Vdc (approx.) (-) TJ =25 C f=1MHz Vsig=50mVp-p 1Ω NON INDUCTIVE PULSE GENERATIOR (NOTE 2) 0 -0.25A (+) OSCILLOSCOPE (NOTE 1) -1.0A ES3A-ES3D NOTES : 1.Rise Time=7ns max. Input Impedance= ES3E-ES3J 1cm SET TIME BASE FOR ° 1 megohm. 22pF 2.Rise time=10ns max. Source Impedance= 50 ohms 10 0.1 1.0 10 100 REVERSE VOLTAGE,(V) 2of2 50/100ns/cm