ONSEMI NTJD4158CT1G

NTJD4158C
Small Signal MOSFET
30 V/−20 V, +0.25/−0.88 A,
Complementary, SC−88
Features
•
•
•
•
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Leading 20 V Trench for Low RDS(on) Performance
ESD Protected Gate
SC−88 Package for Small Footprint (2 x 2 mm)
This is a Pb−Free Device
Applications
•
•
•
•
DC−DC Conversion
Load/Power Management
Load Switch
Cell Phones, MP3s, Digital Cameras, PDAs
Drain−to−Source Voltage
Symbol
N−Ch
VDSS
P−Ch
Gate−to−Source Voltage
N−Ch
Steady
State
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Steady
State
Pulsed Drain Current
N−Ch
P−Ch
TA = 25°C
Unit
30
V
VGS
±20
ID
0.25
0.18
TA = 25°C
−0.88
TA = 85°C
−0.63
TA = 25°C
tp = 10 ms
N−Ch
PD
IDM
1.0 W @ 4.5 V
P−Ch
−20 V
215 mW @ −4.5 V
0.25 A
1.5 W @ 2.5 V
−0.88 A
345 mW @ −2.5 V
TJ, Tstg
IS
1
6
D1
G1
2
5
G2
D2
3
4
S2
(Top View)
MARKING DIAGRAM &
PIN ASSIGNMENT
0.27
W
−55 to
150
°C
0.25
A
260
°C
6
1
A
0.5
−0.48
TL
S1
A
−3.0
P−Ch
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
N−Ch
30 V
ID Max
V
±12
TA = 85°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Value
−20
P−Ch
N−Channel
Continuous Drain
Current (Note 1)
RDS(on) Typ
SC−88 (SOT−363)
(6−Leads)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
V(BR)DSS
TCD M G
G
SC−88 (SOT−363)
CASE 419B
STYLE 26
TCD
M
G
D1 G2 S2
1
S1 G1 D2
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Symbol
Max
Unit
RqJA
460
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 2
1
ORDERING INFORMATION
Device
NTJD4158CT1G
Package
Shipping†
SC−88
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTJD4158C/D
NTJD4158C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain−to−Source
Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/
TJ
N
P
N
P
N
P
N
P
N
P
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 3)
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V
ID = 250 mA
ID = −250 mA
V
30
−20
mV/
°C
33
−9.0
VGS = 0 V, VDS = 30 V
TJ = 25°C
VGS = 0 V, VDS = −16 V
VGS = 0 V, VDS = 30 V
TJ = 125°C
VGS = 0 V, VDS = −16 V
VDS = 0 V, VGS = 10 V
VDS = 0 V, VGS = −4.5 V
1.0
1.0
mA
1.0
1.0
mA
1.5
V
0.5
0.5
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Gate Threshold
Temperature Coefficient
VGS(TH)/
TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
N
P
N
P
N
P
N
P
N
P
VGS = VDS
ID = 100 mA
ID = −250 mA
VGS = 4.5 V, ID = 10 mA
VGS = −4.5 V, ID = −0.88 A
VGS = 2.5 V, ID = 10 mA
VGS = −2.5 V, ID = −0.71 A
VDS = 3.0 V, ID = 10 mA
VDS = −10 V, ID = −0.88 A
0.8
−0.45
1.2
3.2
−2.7
1.0
0.215
1.5
0.345
0.08
3.0
mV/
°C
1.5
0.260
2.5
0.500
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
N
P
N
P
N
P
N
P
N
P
N
P
N
P
VDS = 5.0 V
VDS = −20 V
VDS = 5.0 V
f = 1 MHz, VGS = 0 V
VDS = −20 V
VDS = 5.0 V
VDS = −20 V
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
20
155
19
25
7.25
18
0.9
2.2
0.2
0.2
0.3
0.5
0.2
0.65
33
225
32
40
12
30
1.5
3.5
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
N
VGS = 4.5 V, VDD = 5.0 V,
ID = 250 mA, RG = 50 W
P
VGS = −4.5 V, VDD = −10 V,
ID = −0.5 A, RG = 20 W
ns
15
66
56
78
5.8
6.5
13.5
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
N
P
N
P
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
VGS = 0 V, dIS/dt = 8.0 A/ms
VGS = 0 V, dIS/dt = 100 A/ms
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
IS = 10 mA
IS = −0.48 A
IS = 10 mA
IS = −0.48 A
IS = 10 mA
IS = −0.48 mA
0.65
−0.8
0.45
−0.66
12.4
TBD
0.7
−1.2
V
ns
NTJD4158C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 2.6 V
0.16
0.12
0.1
2V
0.08
0.06
0.04
1.8 V
0.02
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = 5 V
2.2 V
2.4 V
0.14
0.2
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
VGS = 10 V to 2.8 V
0.25
0.5
0.75
1
1.25
0.1
0.05
TJ = −55°C
0
1.5
1.25
1.5
1.75
2.25
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 4.5 V
TJ = 125°C
1.1
1.0
0.9
TJ = 25°C
0.8
0.7
0.6
TJ = −55°C
0.5
0.4
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
1
TJ = 25°C
2.0
VGS = 2.5 V
1.5
1.0
VGS = 4 V
0.5
0
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
ID = 0.01 A
VGS = 4.5 V
VGS = 0 V
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.75
2.5
2.5
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
25°C
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.3
1.2
0.15
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
0.2
0.18
1.25
1
0.75
0.5
TJ = 150°C
100
TJ = 125°C
0.25
0
−50
−25
0
25
50
75
100
125
150
10
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTJD4158C
C, CAPACITANCE (pF)
50
VDS = 0 V
40
Ciss
30
Crss
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
VGS = 0 V
20
Ciss
Coss
10
Crss
0
10
5
VGS
0
VDS
5
10
15
20
25
5
QG
4
3
QGS
2
1
0
ID = 0.1 A
TJ = 25°C
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
100
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
VDD = 5.0 V
ID = 0.25 A
VGS = 4.5 V
tf
tr
td(off)
td(on)
10
1
10
0.08
1
VGS = 0 V
TJ = 25°C
0.06
0.04
0.02
0
0.5
100
0.4
0.8
0.2
0.6
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
1000
QGD
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 10. Diode Forward Voltage vs. Current
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
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4
NTJD4158C
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5, −3.5 & −2.5 V
−2 V
0.75
1
TJ = 25°C
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
1
−1.75 V
0.5
−1.5 V
0.25
−1.25 V
−1 V
0
0.4
0
0.8
1.6
1.2
VDS ≥ −20 V
0.9
0.8
0.7
0.6
0.5
0.4
125°C
0.3
0.2
25°C
0.1
TJ = −55°C
0
2
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.3
VGS = −4.5 V
TJ = 125°C
0.25
0.2
TJ = 25°C
0.15
0.1
TJ = −55°C
0
0.25
0.5
1
0.75
−ID, DRAIN CURRENT (AMPS)
0.5
TJ = 25°C
0.4
VGS = −2.5 V
0.3
0.1
0
0.4
1.6
0.6
0.7
0.8
0.9
1
−ID, DRAIN CURRENT (AMPS)
10000
ID = −0.88 A
VGS = −4.5 V
1.4
VGS = 0 V
TJ = 150°C
1000
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
0.5
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
VGS = −4.5 V
0.2
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.0
0.5
1
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−25
0
25
50
75
100
125
150
TJ = 125°C
100
10
TJ, JUNCTION TEMPERATURE (°C)
10
5
15
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
0
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5
20
NTJD4158C
350
300
C, CAPACITANCE (pF)
VDS = 0 V
Ciss
250
VGS = 0 V
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
Crss
200
150
100
50
Coss
0
10
5
VGS
0
VDS
5
10
15
20
5
QT
4
3
Q1
1
0
ID = −0.88 A
TJ = 25°C
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
2
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
100
0.5
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Q2
2
td(off)
tr
10
td(on)
VDD = −10 V
ID = −0.8 A
VGS = −4.5 V
tf
1
1
10
0.4
0.3
0.2
0.1
0
100
VGS = 0 V
TJ = 25°C
0
RG, GATE RESISTANCE (OHMS)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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6
NTJD4158C
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
4
1
2
3
HE
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.95
1.10
A1 0.00
0.05
0.10
A3
0.20 REF
b
0.10
0.21
0.30
C
0.10
0.14
0.25
D
1.80
2.00
2.20
E
1.15
1.25
1.35
e
0.65 BSC
L
0.10
0.20
0.30
HE
2.00
2.10
2.20
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
−E−
b 6 PL
0.2 (0.008)
M
E
M
A3
C
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NTJD4158C/D