ONSEMI BC307BRL1G

BC307B
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−45
Vdc
Collector − Base Voltage
VCBO
−50
Vdc
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
TJ, Tstg
−55 to +150
°C
Emitter − Base Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
2
BASE
3
EMITTER
1
TO−92
CASE 29
STYLE 17
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC30
7BRL1
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC307BRL1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
Package
Shipping†
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC307/D
BC307B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
V(BR)CEO
−45
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
−5.0
−
−
Vdc
−
−
−0.2
−0.2
−15
−4.0
nAdc
mA
−
200
−
150
290
180
−
460
−
−
−
−
−0.10
−0.30
−0.25
−0.3
−0.6
−
−
−
−0.7
−1.0
−
−
OFF CHARACTERISTICS
Collector−Emitter Leakage Current
(VCES = −50 V, VBE = 0)
(VCES = −50 V, VBE = 0) TA = 125°C
ICES
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
VBE(on)
−0.55
−0.62
−0.7
Vdc
fT
−
280
−
MHz
Ccbo
−
−
6.0
pF
NF
−
2.0
10
dB
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
Common Base Capacitance
(VCB = −10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.
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2
BC307B
TYPICAL CHARACTERISTICS
−1.0
VCE = −10 V
TA = 25°C
1.5
−0.9
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
VCE(sat) @ IC/IB = 10
−0.1
0
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 2. “Saturation” and “On” Voltages
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
VBE(sat) @ IC/IB = 10
−0.2
0.3
0.2
−0.2
VCE = −10 V
TA = 25°C
150
100
80
60
5.0
TA = 25°C
3.0
Cob
2.0
40
30
20
−0.5
−1.0
−2.0 −3.0 −5.0
−10
−20 −30
IC, COLLECTOR CURRENT (mAdc)
1.0
−0.4 −0.6
−50
Figure 3. Current−Gain — Bandwidth Product
0.3
r b′, BASE SPREADING RESISTANCE (OHMS)
0.5
VCE = −10 V
f = 1.0 kHz
TA = 25°C
0.1
0.05
0.03
0.01
−0.1
−0.2
−0.5
−1.0
−2.0
IC, COLLECTOR CURRENT (mAdc)
−5.0
−1.0
−2.0
−4.0 −6.0 −10
VR, REVERSE VOLTAGE (VOLTS)
−20 −30 −40
Figure 4. Capacitances
1.0
hob, OUTPUT ADMITTANCE (OHMS)
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
150
140
130
120
110
100
−0.1
−10
VCE = −10 V
f = 1.0 kHz
TA = 25°C
Figure 5. Output Admittance
−0.2 −0.3 −0.5
−1.0
−2.0 −3.0
IC, COLLECTOR CURRENT (mAdc)
−5.0
Figure 6. Base Spreading Resistance
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3
−10
BC307B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
B
P
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
N
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC307/D