IXYS IXGH60N30C3 Genx3 300v igbt Datasheet

Advance Technical Information
GenX3TM 300V IGBT
VCES
IC110
VCE(sat)
tfi typ
IXGH60N30C3
High Speed IGBTs for
50-150kHz switching
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
300
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
300
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (Limited by leads)
75
A
IC110
TC = 110°C (chip capability)
60
A
ICM
TC = 25°C, 1ms
420
A
IA
TC = 25°C
60
A
EAS
TC = 25°C
400
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ ≤ 300V
ICM = 170
A
PC
TC = 25°C
G
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Md
Mounting torque (TO-247)
z
z
z
z
z
z
z
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = VCES
VGE = 0V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
= 250µA, VGE = 0V
= 250µA, VCE = VGE
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC
300
2.5
TJ = 125°C
= 60A, VGE = 15V
TJ = 125°C
© 2007 IXYS CORPORATION, All rights reserved
1.55
1.60
5.0
V
V
30
750
µA
µA
±100
nA
1.8
V
V
(TAB)
C = Collector
TAB = Collector
High Frequency IGBT
Square RBSOA
High avalanche capability
Drive simplicity with MOS Gate
Turn-On
High current handling capability
Applications
z
Weight
E
Features
z
300
C
G = Gate
E = Emitter
z
TL
TSOLD
300V
60A
1.8V
70ns
TO-247 AD
(IXGH)
Symbol
TJ
=
=
≤
=
z
z
PFC Circuits
PDP Systems
Switched-mode and resonant-mode
converters and inverters
SMPS
AC motor speed control
DC servo and robot drives
DC choppers
DS99914A (01/08)
IXGH60N30C3
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
= 0.5 • IC110, VCE = 10V
Characteristic Values
Typ.
Max.
46
S
3800
pF
240
pF
63
pF
101
nC
21
nC
Qgc
37
nC
td(on)
23
ns
28
ns
gfs
IC
Min.
28
TO-247 AD Outline
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°°C
tri
Eon
IC = 0.5 • IC110, VGE = 15V
0.15
td(off)
VCE = 200V, RG = 5Ω
108
tfi
mJ
160
ns
68
Eoff
0.30
Eon
td(off)
tfi
0.55
mJ
22
td(on)
tri
ns
Inductive Load, TJ = 125°°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 5Ω
Eoff
ns
28
ns
0.26
mJ
120
ns
101
ns
0.40
mJ
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
0.42 °C/W
RthJC
RthCK
0.21
°C/W
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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