ONSEMI BUL45D2G

BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an hFE
window. It’s characteristics make it also suitable for PFC application.
http://onsemi.com
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
TO−220AB
CASE 221A−09
STYLE 1
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
Rating
VCEO
400
Vdc
Collector−Base Breakdown Voltage
VCBO
700
Vdc
Collector−Emitter Breakdown Voltage
VCES
700
Vdc
Emitter−Base Voltage
VEBO
12
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
5
10
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
2
4
Adc
PD
75
0.6
W
W/_C
TJ, Tstg
−65 to 150
_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Temperature
1
2
3
MARKING DIAGRAM
BUL45D2G
AY WW
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristics
RqJC
1.65
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 5
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUL45D2G
Package
Shipping
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUL45D2/D
BUL45D2G
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
400
450
Vdc
Collector−Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
700
910
Vdc
Emitter−Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14.1
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
mAdc
ICES
100
500
100
mAdc
IEBO
100
mAdc
OFF CHARACTERISTICS
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
Emitter−Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
(IC = 2 Adc, IB = 0.4 Adc)
Collector−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
VBE(sat)
Vdc
@ TC = 25°C
@ TC = 125°C
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.8
0.7
1
0.9
0.89
0.79
1
0.9
0.28
0.32
0.4
0.5
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.32
0.38
0.5
0.6
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.46
0.62
0.75
1
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
@ TC = 25°C
@ TC = 125°C
22
20
34
29
10
7
14
9.5
—
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
VEC
V
1.04
0.7
1.5
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
1.2
1.6
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.85
0.62
1.2
Forward Recovery Time (see Figure 27)
(IF = 1 Adc, di/dt = 10 A/ms)
@ TC = 25°C
Tfr
330
(IF = 2 Adc, di/dt = 10 A/ms)
@ TC = 25°C
360
(IF = 0.4 Adc, di/dt = 10 A/ms)
@ TC = 25°C
320
http://onsemi.com
2
ns
BUL45D2G
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
50
75
pF
Input Capacitance
(VEB = 8 Vdc)
Cib
340
500
pF
VCE(dsat)
3.7
9.4
V
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 ms and
3 ms respectively after
rising IB1 reaches
90% of final IB1
IC = 1 A
IB1 = 100 mA
VCC = 300 V
IC = 2 A
IB1 = 0.8 A
VCC = 300 V
@ 1 ms
@ TC = 25°C
@ TC = 125°C
@ 3 ms
@ TC = 25°C
@ TC = 125°C
0.35
2.7
V
@ 1 ms
@ TC = 25°C
@ TC = 125°C
3.9
12
V
@ 3 ms
@ TC = 25°C
@ TC = 125°C
0.4
1.5
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 300 Vdc
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
ton
90
105
150
ns
@ TC = 25°C
@ TC = 125°C
toff
1.15
1.5
1.3
ms
@ TC = 25°C
@ TC = 125°C
ton
90
110
150
ns
@ TC = 25°C
@ TC = 125°C
toff
2.4
ms
2.1
3.1
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
Storage Time
Crossover Time
IC = 1 Adc
IB1 = 100 mAdc
IB2 = 500 mAdc
Fall Time
Storage Time
Crossover Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc
@ TC = 25°C
@ TC = 125°C
tf
90
93
150
ns
@ TC = 25°C
@ TC = 125°C
ts
0.72
1.05
0.9
ms
@ TC = 25°C
@ TC = 125°C
tc
95
95
150
ns
@ TC = 25°C
@ TC = 125°C
tf
80
105
150
ns
@ TC = 25°C
@ TC = 125°C
ts
2.25
ms
@ TC = 25°C
@ TC = 125°C
tc
300
ns
http://onsemi.com
3
1.95
2.9
225
450
BUL45D2G
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 5 V
TJ = 125°C
60
TJ = 25°C
40
TJ = -20°C
TJ = 125°C
80
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
80
20
TJ = 25°C
60
TJ = -20°C
40
20
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0
0.001
10
Figure 1. DC Current Gain @ 1 Volt
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. DC Current Gain @ 5 Volt
4
10
TJ = 25°C
IC/IB = 5
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
TJ = 25°C
3
2
5A
1
1A
2A
3A
1
TJ = 125°C
4A
TJ = -20°C
IC = 500 mA
0
0.001
0.01
1
0.1
IB, BASE CURRENT (AMPS)
0.1
0.001
10
Figure 3. Collector Saturation Region
10
Figure 4. Collector−Emitter Saturation Voltage
10
10
IC/IB = 20
VCE , VOLTAGE (VOLTS)
IC/IB = 10
VCE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
TJ = -20°C
1
TJ = -20°C
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.1
0.001
10
Figure 5. Collector−Emitter Saturation Voltage
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Collector−Emitter Saturation Voltage
http://onsemi.com
4
BUL45D2G
TYPICAL STATIC CHARACTERISTICS
10
10
IC/IB = 10
VBE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
IC/IB = 5
TJ = 25°C
TJ = -20°C
1
TJ = 125°C
1
TJ = -20°C
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.1
0.001
10
Figure 7. Base−Emitter Saturation Region
10
Figure 8. Base−Emitter Saturation Region
10
10
1
FORWARD DIODE VOLTAGE (VOLTS)
IC/IB = 20
VBE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = -20°C
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
25°C
1
125°C
0.1
0.01
10
Figure 9. Base−Emitter Saturation Region
1
0.1
REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
10
Figure 10. Forward Diode Voltage
1000
1000
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
BVCER @ 10 mA
900
BVCER (VOLTS)
100
Cob (pF)
10
TJ = 25°C
800
700
600
BVCER(sus) @ 200 mA
500
400
1
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
10
Figure 11. Capacitance
100
RBE (W)
Figure 12. BVCER = f(ICER)
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5
1000
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
5
1000
t, TIME (ns)
800
TJ = 125°C
TJ = 25°C
600
IC/IB = 10
400
3
2
IC/IB = 5
0
0
0.5
1
1.5
2
2.5
3
IC, COLLECTOR CURRENT (AMPS)
3.5
4
0.5
1.5
2
2.5
3
3.5
4
Figure 14. Resistive Switch Time, toff
5
4
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC/IB = 5
2
1
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
4
t, TIME (s)
μ
3
t, TIME (s)
μ
1
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switch Time, ton
3
2
1
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
0
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
0
4
2
1
3
IC, COLLECTOR CURRENT (AMPS)
4
Figure 16. Inductive Storage Time,
tsi @ IC/IB = 10
Figure 15. Inductive Storage Time,
tsi @ IC/IB = 5
600
400
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
500
TJ = 125°C
TJ = 25°C
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 mH
300
tc
t, TIME (ns)
400
t, TIME (ns)
IC/IB = 5
TJ = 125°C
TJ = 25°C
1
200
IBon = IBoff
VCC = 300 V
PW = 20 ms
IC/IB = 10
4
t, TIME (s)
μ
IBon = IBoff
VCC = 300 V
PW = 20 ms
300
200
200
100
100
TJ = 125°C
TJ = 25°C
tfi
0
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
0
4
0
Figure 17. Inductive Switching,
tc & tfi @ IC/IB = 5
1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Switching,
tfi @ IC/IB = 10
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4
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
1500
5
t, TIME (ns)
1000
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
tsi , STORAGE TIME (μs)
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 mH
500
IC = 1 A
4
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
3
IC = 2 A
0
2
1
3
2
IC, COLLECTOR CURRENT (AMPS)
0
4
0
5
Figure 19. Inductive Switching,
tc @ IC/IB = 10
15
20
Figure 20. Inductive Storage Time
450
1400
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
1200
t c , CROSSOVER TIME (ns)
350
t fi , FALL TIME (ns)
10
hFE, FORCED GAIN
IC = 1 A
250
150
1000
TJ = 125°C
TJ = 25°C
IC = 2 A
800
600
400
200
IC = 2 A
IC = 1 A
50
0
2
4
6
8
10
12
14
hFE, FORCED GAIN
16
18
2
20
Figure 21. Inductive Fall Time
8
10
12
14
hFE, FORCED GAIN
16
18
20
360
2000
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
t fr , FORWARD RECOVERY TIME (ns)
IB1 = IB2
t, TIME (ns)
6
Figure 22. Inductive Crossover Time
3000
IB = 50 mA
1000
4
IB = 100 mA
IB = 200 mA
IB = 500 mA
dI/dt = 10 A/ms
TC = 25°C
340
320
IB = 1 A
0
0.5
300
1
1.5
2
2.5
3
IC, COLLECTOR CURRENT (AMPS)
3.5
4
0
Figure 23. Inductive Storage Time, tsi
0.5
1
1.5
IF, FORWARD CURRENT (AMP)
Figure 24. Forward Recovery Time tfr
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2
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
10
VCE
9
dyn 1 ms
IC
90% IC
8
dyn 3 ms
tfi
tsi
7
6
0V
Vclamp
5
10% IC
10% Vclamp
tc
4
IB
90% IB
3
1 ms
2
IB
90% IB1
1
3 ms
0
0
1
2
3
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
VFR (1.1 VF unless
otherwise specified)
VF
VF
tfr
0.1 VF
0
10% IF
0
2
5
6
7
Figure 26. Inductive Switching Measurements
VFRM
IF
4
TIME
4
6
Figure 27. tfr Measurements
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8
8
10
8
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
COMMON
50
W
MJE210
MTP12N10
150 W
3W
500 mF
IB2
RB2
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
1 mF
-Voff
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (AMPS)
6
1 ms
10
10 ms
5 ms
1
DC
0.1
1 ms
EXTENDED SOA
IC, COLLECTOR CURRENT (AMPS)
100
0.01
TC ≤ 125°C
GAIN ≥ 5
LC = 2 mH
5
4
3
2
-5 V
1
0V
-1.5 V
0
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
200
Figure 28. Forward Bias Safe Operating Area
300
400
500
600
700
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 29. Reverse Bias Safe Operating Area
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9
800
BUL45D2G
TYPICAL CHARACTERISTICS
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL DERATING
0.4
0.2
0
20
40
80
120
60
100
TC, CASE TEMPERATURE (°C)
140
160
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
TJ(pk) may be calculated from the data in Figure 31. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
10
RqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
100
t, TIME (ms)
Figure 31. Typical Thermal Response (ZqJC(t)) for BUL45D2
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10
1000
BUL45D2G
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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BUL45D2/D