Vishay ICTE18C Transzorbâ® transient voltage suppressor Datasheet

ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
d
e
d
n nge
e
t
x
E e Ra Features
g
a
t
l
Vo
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Dimensions in inches and (millimeters)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 1500W peak pulse power capabililty with a 10/1000µs
waveform, repetition rate (duty cycle): 0.05%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Ideal for data and bus line applications
• High temperature soldering guaranteed:
265OC/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
• Includes 1N6373 thru 1N6386
Mechanical Data
Case: Molded plastic body over passivated junction
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the color band
denotes the cathode, which is positive with respect
to the anode under normal TVS operation
Mounting Position: Any
Weight: 0.045 oz., 1.2 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 1.4K per 13" paper Reel
(52mm horiz. tape), 4.2K/carton
73 – 1K per horiz. tape & Ammo box, 10K/carton
Maximum Ratings and Thermal Characteristics (T
Parameter
Stand Off Voltage 5.0 to 18V
Peak Pulse Power 1500W
A
= 25°C unless otherwise noted)
Symbol
Limit
Unit
Peak pulse power dissipation
with a 10/1000µs waveform(1) (Fig. 1)
PPPM
Minimum 1500
W
Peak pulse current wih a 10/1000µs waveform(1) (Fig. 3)
IPPM
See Table 1 & 2
A
PM(AV)
6.5
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
–55 to +175
Steady state power dissipation,
TL = 75OC, at lead lengths 0.375” (9.5mm)
Peak forward surge current, 8.3ms single half sine-wave
unidirectional only (2)
Maximum instantaneous forward voltage
at 100A for unidirectional only
Operating junction and storage temperature range
C
O
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Document Number 88356
23-May-03
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1
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (JEDEC Registered Data) Table 1 – Unidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
VWM
(V)
Minimum(3)
Breakdown
Voltage
at 1.0mA
V(BR)
(V)
Maximum
Reverse
Leakage
at VWM
ID
(µA)
Maximum
Clamping
Voltage
at lPP = 1.0A
Vc
(V)
Maximum
Clamping
Voltage
at lPP = 10A
Vc
(V)
Maximum
Peak
Pulse
Current
IPP
(A)
Stand-Off
Voltage
JEDEC
Type
Number
General
Semiconductor
Part
Number
1N6373(2)
ICTE-5(2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE-8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE-10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE-12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE-15
15.0
17.6
2.0
20.1
20.6
60
1N6378
ICTE-18
18.0
21.2
2.0
24.2
25.2
50
Electrical Characteristics (JEDEC Registered Data) Table 2 – Bidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
VWM
(V)
Minimum(3)
Breakdown
Voltage
at 1.0mA
V(BR)
(V)
Maximum
Reverse
Leakage
at VWM
ID
(µA)
Maximum
Clamping
Voltage
at lPP = 1.0A
Vc
(V)
Maximum
Clamping
Voltage
at lPP = 10A
Vc
(V)
Maximum
Peak
Pulse
Current
IPP
(A)
Stand-Off
Voltage
JEDEC
Type
Number
General
Semiconductor
Part
Number
1N6382
ICTE-8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE-10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE-12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE-15C
15.0
17.6
2.0
20.8
21.4
60
1N6386
ICTE-18C
18.0
21.2
2.0
24.8
25.5
50
Notes:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated
circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages
are employed.
(4) Clamping Factor: 1.33 at full rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V(BR) (Breakdown
Voltage) as measured on a specific device.
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Document Number 88356
23-May-03
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 -- Pulse Derating Curve
10
1
0.1µs
1.0µs
100µs
10µs
1.0ms
10ms
td -- Pulse Width (sec.)
Fig. 3 -- Pulse Waveform
IPPM -- Peak Pulse Current,
% IRSM
150
Peak Value
IPPM
100
Half Value – IPPM
2
td
0
1.0
0
3.0
2.0
4.0
t -- Time (ms)
Fig. 5 -- Typical Junction Capacitance
CJ -- Junction Capacitance
(pF)
100,000
Measured at
Zero Bias
Bidirectional Type
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
10,000
50
25
0
0
50
75
100
125
150
175
200
Fig. 4 -- Typical Junction Capacitance
Uni-Directional
Measured at
Zero Bias
10,000
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Stand-Off
Voltage, VWM
1000
100
1.0
10
100
200
V(BR) -- Breakdown Voltage (V)
Measured at
Stand-Off
Voltage, VWM
1
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
10
100
200
V(BR) -- Breakdown Voltage (V)
Fig. 7 -- Typical Characteristics Clamping Voltage
50
Uni-Directional Only
TA = 25°C
6
8
10
12
14
16
18
20
ICTE-18
ICTE-15
ICTE-12
ICTE-10
ICTE-8
ICTE-5
10
1
25
TA -- Ambient Temperature (°C)
1,000
100
IPP -- Peak Pulse Current (A)
75
100,000
10/1000µsec. Waveform
as defined by R.E.A.
50
100
TJ = 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of IPPM
tr = 10µsec.
CJ -- Junction Capacitance (pF)
0.1
Peak Pulse Power (PPP) or Current (IPPM)
Derating in Percentage, %
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
22
VC -- Clamping Voltage (V)
Document Number 88356
23-May-03
24
26
28
IFSM -- Peak Forward Surge Current (A)
PPPM -- Peak Pulse Power (kW)
Fig. 1 -- Peak Pulse Power Rating Curve
100
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
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