Diodes DMP2004TK P-channel enhancement mode mosfet Datasheet

DMP2004TK
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
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Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
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Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
SOD523
D
Gate
Gate
Protection
Diode
Equivalent Circuit
Top View
ESD PROTECTED
Source
S
G
Top View
Ordering Information (Note 4)
Part Number
DMP2004TK-7
Notes:
Case
SOT523
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PAB
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
PAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
YM
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2004TK
Document number: DS30932 Rev. 5 - 2
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August 2012
© Diodes Incorporated
DMP2004TK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +85°C
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
Value
-20
±8
Units
V
V
ID
-430
-310
mA
IDM
-750
mA
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
±1.0
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
⎯
-1.0
V
RDS (ON)
⎯
0.7
1.1
1.7
1.1
1.6
2.4
Ω
|Yfs|
VSD
200
⎯
⎯
⎯
⎯
-1.4
ms
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = -115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
175
30
20
pF
pF
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
5. Device mounted on FR-4 PCB.
6. Pulse width ≤10μS, Duty Cycle ≤1%
7. Short duration pulse test used to minimize self-heating effect.
DMP2004TK
Document number: DS30932 Rev. 5 - 2
2 of 5
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August 2012
© Diodes Incorporated
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
DMP2004TK
0
0
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-VGS(th), GATE THRESHOLD VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMP2004TK
Document number: DS30932 Rev. 5 - 2
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
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DMP2004TK
-VDS, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
150
120
90
60
30
0
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
-ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
G
H
K
J
DMP2004TK
Document number: DS30932 Rev. 5 - 2
M
N
D
L
4 of 5
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SOT523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
⎯
⎯
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
August 2012
© Diodes Incorporated
DMP2004TK
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
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Copyright © 2012, Diodes Incorporated
www.diodes.com
DMP2004TK
Document number: DS30932 Rev. 5 - 2
5 of 5
www.diodes.com
August 2012
© Diodes Incorporated
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