IXYS IXTA16N50P Polarhvtm power mosfet n-channel enhancement mode avalanche rated Datasheet

PolarHVTM
Power MOSFET
IXTA 16N50P
IXTP 16N50P
IXTQ 16N50P
= 500 V
= 16 A
≤ 400 mΩ
Ω
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
16
48
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
16
25
750
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
10
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
Weight
TO-220
TO-263
TO-3P
(TO-220, TO-3P)
VGS = 0 V, ID = 250 μA
500
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
V
TO-220 (IXTP)
G
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
V
±10
nA
5
100
μA
μA
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
© 2006 IXYS All rights reserved
(TAB)
G
z
400 mΩ
D S
TO-3P (IXTQ)
z
5.5
S
(TAB)
g
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
RDS(on)
G
1.13/10 Nm/lb.in.
4
3
5.5
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
TO-263 (IXTA)
Easy to mount
Space savings
High power density
DS99323E(03/06)
IXTA 16N50P IXTP 16N50P
IXTQ 16N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
9
16
S
2250
pF
240
pF
Crss
12
pF
td(on)
24
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
28
ns
td(off)
RG = 10 Ω (External)
70
ns
25
ns
43
nC
15
nC
12
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.42 °C/W
RthJC
RthCS
RthCS
TO-263 (IXTA) Outline
(TO-220)
(TO-3P)
Source-Drain Diode
°C/W
°C/W
0.25
0.21
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
16
A
ISM
Repetitive
48
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 16 A
-di/dt = 100 A/μs
400
TO-220 (IXTP) Outline
ns
TO-3P Outline
Pins: 1 - Gate
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
2 - Drain
4 - Drain
IXTA 16N50P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Output Characteristics
@ 125ºC
20
20
V GS = 10V
8V
7V
18
16
16
14
I D - Amperes
I D - Amperes
V GS = 10V
8V
7V
18
14
12
10
8
12
10
6V
8
6
6
6V
4
4
2
2
5V
0
0
0
1
2
3
4
5
6
7
8
9
0
10
2
4
6
8
Fig. 3. R DS(on) Normalized to ID = 8A v s.
Junction Temperature
12
14
16
18
20
Fig. 4. R DS(on) Normalized to ID = 8A v s. Drain
Current
3.1
2.8
V GS = 10V
2.8
V GS = 10V
2.6
2.4
R DS(on) - Normalized
2.5
R DS(on) - Normalized
10
V DS - Volts
V DS - Volts
2.2
I D = 16A
1.9
1.6
I D = 8A
1.3
TJ = 125ºC
2.2
2
1.8
1.6
1.4
TJ = 25ºC
1
1.2
0.7
1
0.4
0.8
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
I D - Amperes
T J - Degrees Centigrade
Fig. 5. Maximum Drain Current v s.
Case Temperature
Fig. 6. Input Admittance
18
20
16
18
16
14
14
12
I D - Amperes
I D - Amperes
IXTP 16N50P
IXTQ 16N50P
10
8
6
TJ = 125ºC
25ºC
- 40ºC
12
10
8
6
4
4
2
2
0
0
-50
-25
0
25
50
75
T J - Degrees Centigrade
© 2006 IXYS All rights reserved
100
125
150
4
4.5
5
5.5
V GS - Volts
6
6.5
7
IXTA 16N50P IXTP 16N50P
IXTQ 16N50P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
70
26
24
60
22
20
50
TJ = - 40ºC
25ºC
125ºC
16
14
I S - Amperes
g f s - Siemens
18
12
10
40
30
8
TJ = 125ºC
20
6
4
TJ = 25ºC
10
2
0
0
0
2
4
6
8
10
12
14
16
18
20
0.3
0.4
0.5
0.6
I D - Amperes
0.7
0.8
0.9
1
1.1
1.2
35
40
V SD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
10,000
V DS = 250V
9
f = 1 MHz
8
Capacitance - PicoFarads
I D = 8A
I G = 10mA
V GS - Volts
C iss
1,000
7
6
5
4
3
C oss
100
10
2
C rss
1
1
0
0
5
10
15
20
25
30
35
40
0
45
5
10
15
20
25
30
V DS - Volts
Q G - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Forward-Bias Safe Operating Area
1.00
100
R (th)JC - ºC / W
I D - Amperes
RDS(on) Limit
25µs
10
100µs
1ms
0.10
10m
TJ = 150ºC
DC
TC = 25ºC
1
10
100
1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse W idth - Seconds
1
10
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