Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) • Excellent Safe Operating Area — 200 Watt dc Power Rating to 30 Vdc (2N5303) • Complements to PNP 2N4398, 2N4399 and 2N5745 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 80 Vdc VCB 40 60 80 Vdc IC 30 30 20 Adc Collector–Base Voltage Collector Current — Continuous Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 200 1.14 Watts W/_C TJ, Tstg – 65 to + 200 _C Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 0.875 _C/W Thermal Resistance, Case to Ambient θCA 34 _C/W * Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 200 Figure 1. Power Temperature Derating Curve Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 40 60 80 — — — — — — 5.0 5.0 5.0 — — — 1.0 1.0 1.0 — — — 10 10 10 — — — 1.0 1.0 1.0 — 5.0 40 15 15 5.0 5.0 — 60 60 — — — — — — — — 0.75 1.0 1.5 2.0 2.0 3.0 — — — — — 1.7 1.8 2.0 2.5 2.5 — — — — 1.5 1.7 25 3.0 fT hfe 2.0 — MHz 40 — — tr ts tf — 1.0 µs — 2.0 µs — 1.0 µs *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5301 2N5302 2N5303 Vdc ICEO mAdc ICEX mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 10 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 20 Adc, VCE = 4.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) ALL TYPES 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 hFE *Collector–Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) 2N5301, 2N5302 2N5303 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 *Base Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) ALL TYPES 2N5301, 2N5302 2N5303 2N5301, 2N5302 2N5303 *Base–Emitter On Voltage (Note 1) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 — VCE(sat) Vdc VBE(sat) Vdc VBE(on) Vdc *DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) *SWITCHING CHARACTERISTICS Rise Time Storage Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Fall Time * Indicates JEDEC Registered Data. Note 1: Pulse Width 300 µs, Duty Cycle 2 2.0%. Motorola Bipolar Power Transistor Device Data SWITCHING TIME EQUIVALENT TEST CIRCUITS INPUT PULSE tr ≤ 20 ns PW = 10 to 100 µs DUTY CYCLE = 2.0% INPUT PULSE tr ≤ 20 ns PW = 10 to 100 µs DUTY CYCLE = 2.0% VCC + 30 V 3.0 VCC + 30 V 3.0 +11 V +11 V – 2.0 V TO SCOPE tr ≤ 20 ns 10 TO SCOPE tr ≤ 20 ns 10 0 D – 9.0 V VBB = 7.0 V r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 2. Turn–On time 1.0 0.7 0.5 0.3 0.2 Figure 3. Turn–Off time D = 0.5 0.2 0.1 0.1 0.07 0.05 P(pk) θJC(t) = r(t) θJC θJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.05 0.01 0.02 0.03 0.02 0.01 0.02 SINGLE PULSE 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME (ms) 20 30 50 100 200 300 500 1000 2000 Figure 4. Thermal Response 3000 100 µs 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 2000 2N5303 2N5301, 5302 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 100 5.0 ms 1.0 ms dc TJ = 200°C Secondary Breakdown Limited Bonding Wire Limited TC = 25°C Thermal Limitations Pulse Duty Cycle ≤ 10% 2N5301 2N5302 2N5303 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Active–Region Safe Operating Area Motorola Bipolar Power Transistor Device Data TJ = 25°C 1000 Cib 500 Cob 300 200 100 100 0.5 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 6. Capacitance versus Voltage 3 3.0 5.0 3.0 TJ = 25°C IC/IB = 10 2.0 ts′ 1.0 t, TIME ( µs) t, TIME ( µs) 1.0 0.7 0.5 tr @ VCC = 30 V 0.3 0.7 0.5 tf @ VCC = 30 V 0.3 0.2 tf @ VCC = 10 V tr @ VCC = 10 V td @ VOB = 2.0 V 0.1 0.07 0.05 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 0.1 0.03 0.05 20 30 0.1 1.0 3.0 0.3 0.5 5.0 IC, COLLECTOR CURRENT (AMP) 300 hFE, DC CURRENT GAIN VCE = 10 V VCE = 2.0 V TJ = 175°C 200 25°C 100 70 50 – 55°C 30 20 10 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 2.0 TJ = 25°C 1.6 IC = 2.0 A 10 A 20 A 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 10. Collector Saturation Region 108 2.0 VCE = 30 V 1.6 IC = 10 x ICES 106 IC = 2 x ICES 105 IC ≈ ICES 104 103 20 40 60 80 100 1.4 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 0.4 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 0 TJ = 25°C 1.8 107 V, VOLTAGE (VOLTS) RBE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS) 5.0 A 1.2 Figure 9. DC Current Gain 4 30 10 Figure 8. Turn–Off Time VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Turn–On Time 102 TJ = 25°C IB1 = IB2 IC/IB = 10 ts′ ≈ ts – 1/8 tf VCE(sat) @ IC/IB = 10 0.2 120 140 160 180 200 0 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base–Emitter Resistance Figure 12. “On” Voltages 10 Motorola Bipolar Power Transistor Device Data 30 IC, COLLECTOR CURRENT ( µ A) VCE = 30 V 102 θV, TEMPERATURE COEFFICIENTS (mV/°C) 103 TJ = 175°C 100°C 101 25°C 100 IC = ICES 10–1 10– 2 10– 3 – 0.4 – 0.3 REVERSE – 0.2 – 0.1 FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 + 2.5 TJ = – 55°C to +175°C + 2.0 + 1.5 *APPLIES FOR IC/IB < + 1.0 + 0.5 hFE @ VCE 2 + 2.0 V *θVC for VCE(sat) 0 – 0.5 – 1.0 θVB for VBE(sat) – 1.5 – 2.0 – 2.5 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 VBE, BASE–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut–Off Region Figure 14. Temperature Coefficients Motorola Bipolar Power Transistor Device Data 30 5 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *2N5301/D* 2N5301/D