Renesas HAT2085T Silicon n channel mos fet high speed power switching Datasheet

HAT2085T
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0163-0500
Rev.5.00
Nov 27, 2007
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PTSP0008JB-B
(Package name: TSSOP-8 <TTP-8DV> )
5 6 7 8
D D D D
87
65
12
34
1, 2, 3
4
5, 6, 7, 8
4G
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
Value
200
Unit
V
VGSS
ID
±30
1.4
V
A
ID (pulse) Note 1
IDR
11.2
1.4
A
A
Pch Note 2
Tch
Tstg
1.3
150
–55 to +150
W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 1 of 6
HAT2085T
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Symbol
V (BR) DSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
VDF
Min
200
—
—
3.0
—
1.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.49
1.7
300
43
12
21
11
48
18
10
1.8
4.8
0.8
Max
—
±0.1
1
4.5
0.64
—
—
—
—
—
—
—
—
—
—
—
1.2
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Body to drain diode reverse recovery time
trr
—
65
—
ns
Note:
3. Pulse test
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 2 of 6
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.7 A, VGS = 10 V Note 3
ID = 0.7 A, VDS = 10 V Note 3
VDS = 25 V
VGS = 0
f = 1 MHz
VDD ≅ 100 V, ID = 0.7 A
VGS = 10 V
RL = 143 Ω
Rg = 10 Ω
VDD = 160 V
VGS = 10 V
ID = 1.4 A
IF = 1.4 A, VGS = 0 Note 3
IF = 1.4 A, VGS = 0
diF/dt = 100 A/µs
HAT2085T
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
1.5
10 µs
10
1
1
Drain Current
Channel Dissipation
Pch (W)
2.0
1.0
0.5
0
DC
PW
Op
er
0.1
10
s
=
10
µs
m
s
at
ion
0
m
(P
Operation in
W
≤ No
this area is
10 te
s) 4
0.01 limited by RDS (on)
Ta = 25°C
1shot pulse
0
50
100
150
Ambient Temperature
0.001
0.1
200
1
10
100
Drain to Source Voltage
Ta (°C)
1000
VDS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
8V
Pulse Test
VDS = 10 V
Pulse Test
8
ID
(A)
10 V
8
10
7V
6
6
6V
4
2
5V
Drain Current
Drain Current
ID
(A)
10
4
Tc = 75°C
2
25°C
–25°C
VGS = 4.5 V
0
0
0
4
8
12
Drain to Source Voltage
16
20
0
1.5
1.0
ID = 1.4 A
1.0 A
0.5
0.5 A
0
0
5
10
Gate to Source Voltage
15
20
VGS (V)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 3 of 6
6
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
4
Gate to Source Voltage
VDS (V)
2.0
2
10
VGS = 10 V
5 Pulse Test
2
1
0.5
0.2
0.1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT2085T
2.0
VGS = 10 V
Pulse Test
1.5
ID = 1.4 A
1.0
0.5 A
0.5
0
–25
0
25
50
75
100 125 150
VDS = 10 V
Pulse Test
5
25°C
2
75°C
1
0.5
0.2
0.1
0.1
0.2
1
2
5
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10
1000
500
Capacitance C (pF)
500
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
20
10
1
10
100
Reverse Drain Current
Ciss
200
100
50
Coss
20
Crss
10
5
VGS = 0
f = 1 MHz
2
1
1000
0
20
300
12
200
VDD = 50 V
100 V
160 V
VDS
100
8
4
VDD = 160 V
100 V
50 V
0
0
0
4
8
Gate Charge
12
16
Qg (nc)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 4 of 6
80
100
20
1000
Switching Time t (ns)
VGS
VGS (V)
16
ID = 2 A
60
Switching Characteristics
Gate to Source Voltage
400
40
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
VDS (V)
0.5
Drain Current ID (A)
Tc
1000
Drain to Source Voltage
Tc = –25°C
(°C)
Case Temperature
Reverse Recovery Time trr (ns)
10
VGS = 10 V, VDD = 100 V
PW = 5 µs, duty ≤ 1 %
300 Rg = 10 Ω
tf
100
tr
td(off)
td(on)
30
10
tf
tr
3
1
0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
HAT2085T
Gate to Source Cutoff Voltage VGS (off) (V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
10
Pulse Test
8
6
4
10 V
2
VGS = 0
5V
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Gate to Source Cutoff Voltage vs.
Case Temperature
5
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
VDS = 10 V
0
–25
0
25
50
75
Case Temperature
VSD (V)
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 139°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
D=
PDM
0.001
t
ho
pu
lse
PW
T
1s
0.0001
10 µ
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
10 Ω
Switching Time Waveform
D.U.T.
Vin
Vout
Vin
10 V
10%
RL
VDD
= 100 V
10%
90%
td(on)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 5 of 6
10%
tr
90%
td(off)
tf
HAT2085T
Package Dimensions
Package Name
TSSOP-8
JEITA Package Code
P-TSSOP8-4.4 × 3-0.65
RENESAS Code
PTSP0008JB-B
8
MASS[Typ.]
0.037g
F
*1 D
Previous Code
TTP-8DV
5
c
Index mark
HE
*2 E
bp
4
1
Z
Terminal cross section
*3 b p
(Ni/Pd/Au plating)
x M
e
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference
Symbol
A1
A
L1
L
y
HE
e
x
y
Z
L
L1
Detail F
Ordering Information
Part No.
HAT2085T-EL-E
Quantity
3000 pcs
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 6 of 6
Shipping Container
Taping
D
E
A2
A1
A
bp
b1
c
c1
Dimension in Millimeters
Min
Nom Max
3.00 3.30
4.40
0.03 0.07 0.10
1.10
0.15 0.20 0.25
0.10 0.15
0.20
0°
8°
6.20 6.40 6.60
0.65
0.13
0.10
0.805
0.40 0.50 0.60
1.0
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