Powerex Power CM75DU-24H Dual igbtmod 75 amperes/1200 volt Datasheet

CM75DU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
U-Series Module
75 Amperes/1200 Volts
TC Measured
Point
A
B
E
F
U
H
G
J
C2E1
E2
C1
G2 G2
CM
D
C
2 - Mounting
Holes
(6.5 Dia.)
V
G1 E1
K
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
L
M
3-M5 Nuts
O
O
P
N
Q
0.110 - 0.5 Tab
P
S
R
T
E2
G2
C2E1
E2
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
3.7
Millimeters
94.0
B
3.15±0.01
C
1.89
80.0±0.25
48.0
D
0.94
E
0.28
Dimensions
Inches
M
0.47
Millimeters
12.0
N
0.53
13.5
O
0.1
2.5
24.0
P
0.63
16.0
7.0
Q
0.98
25.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75DU-24H is a
1200V (VCES), 75 Ampere Dual
IGBTMOD™ Power Module.
F
0.67
17.0
R
G
0.91
23.0
S
0.3
7.5
H
0.91
23.0
T
0.83
21.2
J
0.43
11.0
U
0.16
4.0
Type
Current Rating
Amperes
VCES
Volts (x 50)
K
0.71
18.0
V
0.51
13.0
CM
75
24
L
0.16
4.0
45
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DU-24H
Dual IGBTMOD™ U-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM75DU-24H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
75
Amperes
ICM
150*
Amperes
IE
75
Amperes
Peak Emitter Current**
IEM
150*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Pc
600
Watts
Mounting Torque, M5 Main Terminal
–
31
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
–
310
Grams
Viso
2500
Volts
Storage Temperature
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
–
–
1
Units
mA
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C
–
2.9
3.7
Volts
IC = 75A, VGE = 15V, Tj = 125°C
–
2.85
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 75A, VGE = 15V
–
280
–
nC
Emitter-Collector Voltage*
VEC
IE = 75A, VGE = 0V
–
–
Min.
Typ.
–
–
–
–
3.7
nf
–
–
2.2
nf
Gate Leakage Voltage
3.2
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics,Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Max.
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 75A,
–
–
100
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
Switch
Turn-off Delay Time
Times
Fall Time
VCE = 10V, VGE = 0V
11
Units
Input Capacitance
nf
td(off)
RG = 4.2V, Resistive
–
–
250
ns
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time**
trr
IE = 75A, diE/dt = -150A/µs
–
–
300
ns
Diode Reverse Recovery Charge**
Qrr
IE = 75A, diE/dt = -150A/µs
–
0.41
–
µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module
–
–
0.21
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module
–
–
0.47
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.035
–
°C/W
Contact Thermal Resistance
46
Symbol
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DU-24H
Dual IGBTMOD™ U-Series Module
75 Amperes/1200 Volts
150
15
12
125
VGE = 20V
11
100
75
10
50
9
25
8
0
2
4
6
8
100
75
50
25
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
10
4
8
12
16
0
20
25
50
75
100
125
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
10
102
IC = 75A
4
2
IC = 30A
4
8
12
16
20
101
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
tf
VCC = 600V
VGE = ±15V
RG = 4.2 Ω
Tj = 125°C
REVERSE RECOVERY TIME, trr, (ns)
td(off)
102
td(on)
101
tr
101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101
Irr
101
100
101
102
EMITTER CURRENT, IE, (AMPERES)
Coes
100
Cres
100
101
102
GATE CHARGE, VGE
di/dt = -150A/µsec
Tj = 25°C
trr
Cies
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
102
101
10-1
10-1
3.5
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
100
100
102
100
1.0
0
0
CAPACITANCE, Cies, Coes, Cres, (nF)
6
100
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 150A
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
8
150
VGE = 0V
f = 1MHz
Tj = 25°C
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
125
0
0
SWITCHING TIME, (ns)
5
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
150
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 75A
VCC = 400V
15
VCC = 600V
10
5
0
0
100
200
300
400
GATE CHARGE, QG, (nC)
47
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
101
100
10-2
10-1
100
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
48
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.21°C/W
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM75DU-24H
Dual IGBTMOD™ U-Series Module
75 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.47°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
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