Fairchild FDB12N50F N-channel mosfet, frfet 500v, 11.5a, 0.7î© Datasheet

UniFETTM
FDB12N50F
tm
N-Channel MOSFET, FRFET
500V, 11.5A, 0.7Ω
Features
Description
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
D
D
G
S
G
D2-PAK
TO-263AB
FDB Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
-Continuous (TC = 25oC)
Ratings
500
Units
V
±30
V
11.5
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
11.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.5
mJ
dv/dt
Peak Diode Recovery dv/dt
20
V/ns
-Continuous (TC = 100oC)
- Pulsed
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
46
A
(Note 2)
456
mJ
(Note 3)
(TC = 25oC)
- Derate above 25oC
A
6.9
165
W
1.33
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
0.75
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2012 Fairchild Semiconductor Corporation
FDB12N50F Rev.C0
1
Units
o
C/W
www.fairchildsemi.com
FDB12N50F N-Channel MOSFET
February 2012
Device Marking
FDB12N50F
Device
FDB12N50FTM_WS
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.5
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.59
0.7
Ω
-
12
-
S
-
1050
1395
pF
-
135
180
pF
-
11
17
pF
-
21
30
nC
-
6
-
nC
-
9
-
nC
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 6A
gFS
Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4, 5)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25Ω
(Note 4, 5)
-
21
50
ns
-
45
100
ns
-
50
110
ns
-
35
80
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.5
V
trr
Reverse Recovery Time
134
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/μs
-
0.37
-
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB12N50F Rev.C0
2
www.fairchildsemi.com
FDB12N50F N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
FDB12N50F N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
30
ID,Drain Current[A]
10
ID,Drain Current[A]
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
o
25 C
*Notes:
1. 250μs Pulse Test
0.1
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
o
0.05
0.1
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
20
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS,Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
100
0.8
0.7
VGS = 10V
VGS = 20V
0.6
o
150 C
10
o
25 C
Notes:
1. VGS = 0V
o
0.5
* Note : TJ = 25 C
0
6
12
ID, Drain Current [A]
1
0.0
18
2. 250μs Pulse Test
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
10
1500
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Coss
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.9
RDS(on) [Ω],
Drain-Source On-Resistance
o
150 C
* Note:
1. VGS = 0V
2. f = 1MHz
1000
500
Crss
0
0.1
FDB12N50F Rev.C0
1
10
VDS, Drain-Source Voltage [V]
8
6
4
2
0
30
3
VDS = 100V
VDS = 250V
VDS = 400V
* Note : ID = 11.5A
0
4
8
12
16
Qg, Total Gate Charge [nC]
20
24
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Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
100
20μs
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
0.9
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
o
1. TC = 25 C
* Notes :
1. VGS = 0V
2. ID = 250μA
0.8
-100
100μs
o
0.01
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature
12
ID, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.2
0.1
0.1
0.05
t1
0.01
0.01
t2
*Notes:
Single pulse
0.001
-5
10
FDB12N50F Rev.C0
PDM
0.02
o
1. ZθJC(t) = 0.75 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FDB12N50F N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDB12N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB12N50F Rev.C0
5
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FDB12N50F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDB12N50F Rev.C0
6
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FDB12N50F N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
FDB12N50F Rev.C0
7
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tm
FDB12N50F N-Channel MOSFET
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Datasheet contains the design specifications for product development. Specifications
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Rev. I61
FDB12N50F Rev.C0
8
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