MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector −Emitter Voltage VCEO −30 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −1.0 Adc ICM −2.0 A Collector Current − Continuous Collector Current − Peak Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic 1 BASE Symbol Max Unit 310 2.5 mW mW/°C 403 °C/W 710 5.7 mW mW/°C 176 °C/W PD RqJA SOT−23 (TO−236) CASE 318 STYLE 6 1 2 MARKING DIAGRAM PD RqJA Total Device Dissipation (Ref. Figure 8) (Single Pulse < 10 sec.) PDsingle Junction and Storage Temperature TJ, Tstg 575 mW −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad G3 M G G 1 G3 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT589LT1 SOT−23 3,000 / Tape & Reel MMBT589LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 4 1 Publication Order Number: MMBT589LT1/D MMBT589LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −30 − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −50 − Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − −0.1 mAdc Collector−Emitter Cutoff Current (VCES = −30 Vdc) ICES − −0.1 mAdc Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO − −0.1 mAdc 100 100 80 40 − 300 − − − − − −0.25 −0.30 −0.65 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (Note 3) (Figure 1) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = 2.0 A, VCE = −2.0 V) − Collector −Emitter Saturation Voltage (Note 3) (Figure 3) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = 0.1 A) (IC = −2.0 A, IB = −0.2 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (Figure 2) (IC = −1.0 A, IB = −0.1 A) VBE(sat) − −1.2 V Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) − −1.1 V fT 100 − MHz Cobo − 15 pF Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 V MMBT589LT1 200 230 210 170 150 100 25°C 130 110 50 90 −55°C 70 0 0.01 0.001 0.1 1.0 50 10 Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1000 Figure 1. DC Current Gain versus Collector Current VBE(sat) 0.8 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 1.0 100 10 1000 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.4 100 mA 50 mA 0.1 0.8 0.75 0.001 0.01 0.1 1.0 10 Figure 4. Base Emitter Saturation Voltage versus Collector Current 1000 mA 0.01 IC/IB = 10 Figure 3. “On” Voltages 0.6 10 mA 0.9 0.85 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 0.95 IC, COLLECTOR CURRENT (mA) 1.0 0 100 IC, COLLECTOR CURRENT (mA) 0.9 0 10 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE = −1.0 V 125°C 190 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = −2.0 V 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 10 MMBT589LT1 IC , COLLECTOR CURRENT (AMPS) 10 SINGLE PULSE TEST AT Tamb = 25°C 1s 1.0 10 ms 100 ms 1 ms 100 ms 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 0.2 0.1 1.0E+00 0.05 0.02 Rthja , (t) 1.0E−01 D = 0.01 1.0E−02 r(t) 1.0E−03 1E−05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 4 10 100 1000 MMBT589LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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