NXP BC559 Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC559
PNP general purpose transistor
Product data sheet
Supersedes data of 1999 May 28
2004 Nov 05
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BC559
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 30 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage1
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: BC549.
3
2
3
2
1
MAM281
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
BC559C
NAME
DESCRIPTION
VERSION
SC-43A
plastic single-ended leaded (through hole) package; 3 leads
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−30
V
VCEO
collector-emitter voltage
open base
−
−30
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
2004 Nov 05
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BC559
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
250
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −30 V; IE = 0 A
−
−1
−15
nA
VCB = −30 V; IE = 0 A; Tj = 150 °C
−
−
−4
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
−
−100
hFE
DC current gain; BC559C
VCE = −5 V; IC = −2 mA; see Fig.2
420
−
800
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
−60
−300
mV
IC = −100 mA; IB = −5 mA
−
−180
−650
mV
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA; note 1
−
−750
−
mV
IC = −100 mA; IB = −5 mA; note 1
−
−930
−
mV
VCE = −5 V; IC = −2 mA; note 2
−600
−650
−750
mV
VBEsat
VBE
base-emitter voltage
VCE = −5 V; IC = −10 mA; note 2
−
−
−820
mV
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
−
4
−
pF
fT
transition frequency
VCB = −5 V; IE = −10 mA; f = 100 MHz 100
−
−
MHz
F
noise figure; BC559C
VCE = −5 V; IC = −200 μA; RS = 2 kΩ;
f = 30 Hz to 15.7 kHz
−
−
4
dB
VCE = −5 V; IC = −200 μA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
2004 Nov 05
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BC559
MBH728
600
handbook, full pagewidth
hFE
500
VCE = −5 V
400
300
200
100
0
−10−2
−10−1
−1
−10
BC559C.
Fig.2 DC current gain; typical values.
2004 Nov 05
4
−102
IC (mA)
−103
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BC559
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Nov 05
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
5
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BC559
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Nov 05
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/05/pp7
Date of release: 2004 Nov 05
Document order number: 9397 750 13572
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