Diodes DT3055 N-channel enhancement mode field effect transistor Datasheet

DT3055
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
High Cell Density DMOS Technology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance
SOT-223
A
B
D
C D
D
G
E
S
P
G
R
H
J
K
L
S
N
M
Mechanical Data
·
·
SOT-223 Plastic Case
Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
Maximum Ratings
Dim
Min
Max
A
6.30
6.71
B
2.90
3.10
C
6.71
7.29
D
3.30
3.71
2.35
E
2.22
G
0.92
1.00
H
1.10
1.30
J
1.55
1.80
K
0.025
0.102
L
0.66
0.79
M
4.55
4.70
N
—
10°
P
10°
16°
R
0.254
0.356
S
10°
16°
All Dimensions in mm
25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage - Continuous
VGSS
±20
V
Note 1a Continuous
Pulsed
ID
±4
±25
A
Note 1a
Note 1b
Note 1c
Pd
3.0
1.3
1.1
W
Tj, TSTG
-65 to +150
°C
Symbol
Value
Unit
RQJA
42
°C/W
RQJC
12
°C/W
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Notes:
Note 1
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11604 Rev. C-4
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DT3055
Electrical Characteristics 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
Tj =125°C
IDSS
—
—
—
—
10
100
µA
VDS = 48V, VGS = 0V
Gate-Body Leakage, Forward
IGSSF
—
—
100
nA
VGS = 20V, VDS = 0V
Gate-Body Leakage, Reverse
IGSSR
—
—
-100
nA
VGS = -20V, VDS = 0V
Tj = 100°C
VGS(th)
2.0
1.5
2.9
2.3
4.0
3.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
Tj = 125°C
RDS (ON)
—
—
0.075
0.13
0.10
0.22
W
VGS = 10V, ID = 4.0A
ID(ON)
15
—
—
A
VGS = 10V. VDS = 10V
gFS
—
3.5
—
m
VDS = 15V, ID = 4.0A
Input Capacitance
CISS
—
350
—
pF
Output Capacitance
COSS
—
135
—
pF
Reverse Transfer Capacitance
CRSS
—
40
—
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 30V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
—
18
25
ns
Turn-On Rise Time
tr
—
25
50
ns
Turn-Off Delay Time
tD(OFF)
—
43
65
ns
Turn-Off Fall Time
tf
—
34
60
ns
Total Gate Charge
Qg
—
10
15
nC
Gate-Source Charge
Qgs
—
2.0
4.0
nC
Gate-Drain Charge
Qgd
—
6.0
10
nC
2.5
A
1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
IS
—
—
Forward Current
Source-Drain Diode Forward Voltage
Notes:
VSD
—
—
VDD = 25V, ID = 1.2A
VGS = 10V, RGEN = 50W
VDS = 40V. ID = 4.0A.
VGS = 10V
VGS = 0V, IS = 4.0A (Note 2)
2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
DS11604 Rev. C-4
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DT3055
VGS = 10V
8.0
ID, DRAIN-SOURCE CURRENT
7.0
12
9
6.0
6
5.5
5.0
3
4.5
0
0
1
2
3
4
2.0
1.8
3.0
VGS = 5.0V
5.5
6.0
2.5
7.0
2.0
1.5
8.0
10
1.0
0.5
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
Fig. 2, On-Resistance vs Gate Voltage and Drain Current
10
VDS = 10V
ID = 4A
VGS = 10V
TJ = -55 C
125 C
8
25 C
1.6
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1, On-Region Characteristics
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
15
1.4
1.2
1.0
0.8
6
4
2
0.6
0.4
-50
-25
0
25
50
75
100
125
150
Tj, JUNCTION TEMPERATURE ( C)
Fig. 3, On-Resistance Variation vs Temperature
DS11604 Rev. C-4
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4, On-Resistance vs Gate Voltage & Temperature
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DT3055
40
10
0
ID, DRAIN CURRENT (A)
10
s
IT
M
N)
LI
O
S(
RD
10
0m
1s
s
10
1
s
dc
-.1
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5, Maximum Safe Operating Area
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
RQJA (t) = r(t) b RQJA
RQJA = See Note 1c
0.05
0.02
P(pk)
0.01
0.01
Single Pulse
t1
t2
TJ - TA = PPK b RQJA(t)
Duty Cycle, D = t1/t2
0.001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
3000
t1, SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.
DS11604 Rev. C-4
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DT3055
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