NJSEMI BC109 General purpose small signal npn bipolar transistor Datasheet

lueti, Una.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
BC107
BC108
BC109
MECHANICAL DATA
Dimensions in mm (inches)
„ 5.64 (0.230)^
4.95(0.195)
j U
GENERAL PURPOSE
SMALL SIGNAL
NPN BIPOLAR TRANSISTOR
FEATURES
048(0.019) jj]
0.41 (0.018)
• SILICON NPN
'
• HERMETICALLY SEALED TO18
2.5410.100).
• SCREENING OPTIONS AVAILABLE
TO-18 METAL PACKAGE
Underside View
PIN 1 - Emitter
PIN 2 - Base
PIN 3 - Collector
ABSOLUTE MAXIMUM RATINGS (TA - 25°C unless otherwise stated)
VCBO
Collector-Base Continuous Voltage
BC017
VCEO
BC108, BC109
Collector - Emitter Continuous Voltage With Zero Base Current BC107
VCES
BC108, BC109
Collector - Emitter Continuous Voltage With Base Shortcircuited to Emitter
50V
BC107
VEBO
30V
45V
20V
50V
BC108,
BC109
BC107
30V
6V
BC108,
BC109
5V
Emitter - Base Continuous Voltage Reverse Voltage
lc
Continuous Collector Current
ICM
Peak Collector Current
200mA
Ptot
Power Dissipation @ Tamb = 25°C
SOOmW
Tamb
Ambient Operating Temperature Range
-65to+175°C
Tstg
Storage Temperature Range
-65to+175°C
100mA
NJ Semi-Conductors reserves the right to change test eonditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BC107
BC108
BC109
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Test Conditions
Min.
Parameter
Typ.
Max. Unit
V C B =45V
BC107
15
VCB = 25V
BC108, BC109
15
'ceo(i)
Collector-Base Leakage Current
lceo(i)
Collector-Emitter Leakage Current
V C B =45V
BC107
4
@Tamb=125°C
V C B =25V
BC108, BC109
4
Emitter Cut-off Current
V E B =4V
lc = 0
1
VCE = 5V
lc = 2mA
Group A
BC107, BC108
110
220
Group B
All Types
180
460
Group C
BC108, BC109
380
800
IEBO
h 2 iE
Static Forward Current Transfer Ratio
BC107
110
460
BC108
110
800
BC109
180
800
nA
MA
MA
Base - Emitter Breakdown
VCE = 5V
lc = 2mA
0.7
V
VBE(Sat)(i)
Base - Emitter Saturation Voltage
I B = 0.5mA
l c =10mA
0.83
V
\/CE(sat)(i)
Collector - Emitter Saturation Voltage
I B = 0.5mA
l c =10mA
0.25
V
fT
Transition Frequency
VCE = 5V
10= 10mA
VBE
f=100MH z
VCE = 5V
F
MHz
I C = 0.2mA
R = 2kiJ f=1kH z AF=200HZ
Noise Factor
BC109
I
I
I
BC107, BC108
VCE - 5V lc = 2mA f -100kHz
Group A
n 2ie
!
150
Small Signal Forward Current Transfer Group B
Group C
Ratio
BC107, BC108
125
All Types
240
BC108, BC109
450
BC107
125
dB
4
10
260
500
;
900
500
BC108
125
900
BC109
240
900
4.5
VCE = 5Vl c = 2mAf=1kH z
i11e
Common Emitter Input Impedance
Group A
BC107, BC108
1.6
Group B
All Types
3.2
Group C
BC108, BC109
6.0
:
kQ
8.5
15
V C E = 5 V l c = 2 m A f = 1kHz
n22e
C22b
^th(j-amb)
Common Emitter Output Admittance
Common Base Output Capacitance
Thermal Resistance: Junction to
Ambient
•
Group A
BC107, BC108
30
Group B
All Types
60
Group C
BC108, BC109
110
V C B =10V
f=1MH z
;
MS
6
PF
500
°C/W
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