IXYS DSEI2X61-12B Fast recovery epitaxial diode (fred) Datasheet

DSEI 2x 61
Fast Recovery
Epitaxial Diode (FRED)
VRRM
V
V
1200
1200
miniBLOC, SOT-227 B
E72873
Type
DSEI 2x 61-12B
Symbol
Test Conditions
Maximum Ratings (per diode)
IFRMS
IFAVM ÿÿ①
IFRM
TVJ = TVJM
TC = 50°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
100
52
700
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
500
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
400
440
A
A
1000
1050
A2s
A2s
Features
●
●
●
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
2
800
810
As
A2s
-40...+150
150
-40...+150
°C
°C
°C
180
W
2500
V~
●
●
●
●
●
Applications
●
●
●
●
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Weight
30
Nm/lb.in.
Nm/lb.in.
g
●
●
●
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
VF
IF = 60 A;
TVJ = 150°C
TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = TVJM
Characteristic Values (per diode)
typ.
max.
2.2
0.5
14
mA
mA
mA
2.15
2.50
V
V
1.65
8.3
V
mW
●
0.7
0.05
K/W
K/W
trr
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C
40
60
ns
IRM
VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms
L £ 0.05 mH; TVJ = 100°C
32
36
A
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
RthJC
RthCK
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
●
●
●
●
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
009
VRSM
IFAVM = 2x 52 A
VRRM = 1200 V
trr
= 40 ns
1-2
DSEI 2x 61, 1200 V
90
12
A
80
µC
TVJ= 25°C
TVJ=100°C
TVJ=150°C
70
IF
60
80
TVJ=100°C
VR= 540V
TVJ=100°C
VR=540V
A
10
IF=60A
IF=120A
IF=60A
IF=30A
8
Qr
60
50
6
max.
IF=60A
IF=120A
IF=60A
IF=30A
IRM
40
40
4
30
typ.
max.
20
20
2
typ.
10
0
0
1
2
3
V
0
0
10
4
VF
Fig. 1 Forward current
versus voltage drop.
A/µs 1000
100
-diF/dt
200
TVJ=100°C
VR=540V
µs
1.2
0.8
trr
0.6
800 1000
A/µs
Fig. 3 Peak reverse current versus
-diF/dt.
1200
V
ns
50
1000
VFR
max.
1.0
IRM
600
60
1.0
0.8
400
-diF/dt
Fig. 2 Recovery charge versus -diF/dt.
1.4
Kf
0
IF=60A
IF=120A
IF=60A
IF=30A
0.6
40
800
tfr
VFR
600
30
0.4
QR
400
20
0.4
tfr
0.2
0.2
10
typ.
0.0
0
0.0
0
40
80
120 °C 160
0
200
TJ
Fig. 4 Dynamic parameters versus
junction temperature.
TVJ=125°C
IF=60A
400
600
-diF/dt
A/µs
800
1000
Fig. 5 Recovery time versus -diF/dt.
0
© 2000 IXYS All rights reserved
400
600
diF/dt
0
A/µs
800 1000
Fig. 6 Peak forward voltage
versus diF/dt.
Dimensions
Fig. 7 Transient thermal impedance junction to case.
200
200
miniBLOC SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
2-2
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