MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 3 2.6 ± 0.2 2 3 1 • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diode (TYP.) .........100ns • Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 1 GATE 2 DRAIN 3 SOURCE 1 2 TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Conditions VGS = 0V VDS = 0V Drain current (Pulsed) Avalanche drain current (Pulsed) L = 50µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value Ratings Unit –100 ±20 V V –20 –80 –20 –20 –80 25 A A A A A W –55 ~ +150 –55 ~ +150 2000 °C °C V 2.0 g Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-2 P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Typ. Max. ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V –100 — — — — — — ±0.1 –0.1 V µA mA ID = –1mA, VDS = –10V ID = –10A, VGS = –10V ID = –10A, VGS = –4V ID = –10A, VGS = –10V ID = –10A, VDS = –10V –1.0 — — — –1.5 0.20 0.25 –2.0 –2.0 0.26 0.32 –2.6 V Ω Ω V — — — — 10.3 2360 198 99 — — — — S pF pF pF — — — — 13 30 139 74 — — — — ns ns ns ns — –1.0 –1.5 V — — — 100 5.00 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –50V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –10A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = –20A, dis/dt = 100A/µs PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA –2 40 30 20 10 0 0 50 100 150 100µs tw = 10µs –7 –5 –3 –2 –101 –7 –5 1ms –3 –2 TC = 25°C Single Pulse –100 –7 –5 DC –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) –50 –20 –8V –6V –40 VGS = –10V Tc = 25°C Pulse Test –5V –30 –20 –4V –10 –3V DRAIN CURRENT ID (A) VGS = –10V DRAIN CURRENT ID (A) 10ms –102 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 –4V –16 Tc = 25°C Pulse Test –6V –5V –12 –8 –3V –4 PD = 25W PD = 25W 0 0 –10 –20 –30 –40 –50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 –4 –8 –12 –16 –20 DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-2 P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Tc = 25°C Pulse Test –40 –30 –20 ID = –40A –10 –20A 0.5 VGS = DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) –4V 0.4 0.3 –10V 0.2 Tc = 25°C Pulse Test 0.1 –10A 0 0 –2 –4 –6 DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 2 Tc = 25°C VDS = –10V Pulse Test 101 FORWARD TRANSFER ADMITTANCE yfs (S) –40 –30 –20 –10 0 0 –10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –10 GATE-SOURCE VOLTAGE VGS (V) –50 DRAIN CURRENT ID (A) –8 0 –2 –4 –6 –8 100 VDS = –10V Pulse Test 7 5 4 3 –2 –3 –4–5 –7 –101 –2 –3 –4–5 –7 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 3 Tch = 25°C f = 1MHZ VGS = 0V Coss 102 7 5 Crss 4 3 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) td(off) 2 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 TC = 25°C 75°C 125°C GATE-SOURCE VOLTAGE VGS (V) 103 7 5 4 3 2 2 –7 –100 –10 3 2 7 5 4 3 102 tf 7 5 4 3 tr 2 td(on) 101 7 5 4 3 Tch = 25°C VGS = –10V VDD = –50V RGEN = RGS = 50Ω –5 –7 –100 –2 –3 –4 –5 –7 –101 –2 –3 –4 –5 DRAIN CURRENT ID (A) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX20KMJ-2 P HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) VDS = –20V –50V –6 –80V –4 –2 0 10 20 30 40 –30 –20 75°C 125°C –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VGS = –10V ID = 1/2ID Pulse Test 100 7 5 4 3 2 –50 0 50 100 VDS = –10V ID = –1mA –3.2 –2.4 –1.6 –0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 TC = 25°C GATE CHARGE Qg (nC) 2 10–1 –40 0 101 7 5 4 3 VGS = 0V Pulse Test 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –50 Tch = 25°C ID = –20A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 0.5 3 2 100 7 5 3 2 10–1 0.2 0.1 0.05 0.02 0.01 PDM Single Pulse tw 7 5 T D= tw T 3 2 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999