HMC659 v02.0217 AMPLIFIERS - LINEAR & POWER - CHIP GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features The HMC659 is ideal for: P1dB Output Power: +26.5 dBm • Telecom Infrastructure Gain: 19 dB • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.115 x 1.630 x 0.1 mm Functional Diagram General Description The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300mA from a +8V supply. Gain flatness is excellent at ±0.5 dB from DC to 10 GHz making the HMC659 ideal for EW, ECM, Radar and test equipment applications. The HMC659 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 6 16.1 19.1 Typ. Max. Min. 6 - 11 15.5 18.5 14.8 Typ. Max. Units 11 - 15 GHz 17.8 dB Gain Flatness ±0.5 ±0.15 ±0.6 dB Gain Variation Over Temperature 0.013 0.018 0.025 dB/ °C Input Return Loss 19 17 15 dB Output Return Loss 18 17 15 dB 25 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 23 25.5 24 26.5 22.5 26 27 27 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 2.5 2 3 dBc Supply Current (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) 300 300 300 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 300mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Gain & Return Loss Gain vs. Temperature 20 16 10 GAIN (dB) RESPONSE (dB) 20 S21 S11 S22 0 12 +25C +85C -55C 8 -10 4 -20 0 -30 0 2 4 6 8 10 12 14 16 0 18 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 10 12 14 16 18 Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) +25C +85C -55C -5 RETURN LOSS (dB) 8 FREQUENCY (GHz) -10 -15 -20 +25C +85C -55C -10 -20 -30 -25 -30 -40 0 2 4 6 8 10 12 14 16 18 0 2 4 FREQUENCY (GHz) 0 7 -10 6 NOISE FIGURE (dB) ISOLATION (dB) 8 10 12 14 16 Noise Figure vs. Temperature Reverse Isolation vs. Temperature +25C +85C -55C -20 6 FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP 24 30 -30 -40 -50 +25C +85C -55C 5 4 3 2 1 -60 0 0 2 4 6 8 FREQUENCY (GHz) 10 12 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz 32 30 30 28 28 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 26 26 24 24 22 22 20 +25C +85C -55C 20 0 3 6 9 12 15 0 2.5 5 FREQUENCY (GHz) 7.5 10 12.5 15 FREQUENCY (GHz) Output IP3 vs. Temperature Output IP3 vs. Output Power @ 7GHz 45 50 +25C +85C -55C 40 7.5V 8.0V 8.5V 45 35 IP3 (dBm) IP3 (dBm) AMPLIFIERS - LINEAR & POWER - CHIP P1dB vs. Frequency 30 40 35 25 20 30 0 2 4 6 8 10 12 14 16 0 4 8 FREQUENCY (GHz) 12 16 20 24 28 OUTPUT POWER (dBm) Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg 40 36 32 28 24 20 16 12 7.5 Gain P1dB 8 Psat IP3 8.5 Vdd (V) 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz 32 28 28 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 24 20 16 12 8 Pout Gain PAE 4 0 24 20 16 12 8 Pout Gain PAE 4 0 0 3 6 9 12 15 0 3 6 INPUT POWER (dBm) 12 15 Power Dissipation Power Compression @ 15 GHz 10 32 28 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 9 INPUT POWER (dBm) 24 20 16 12 8 Pout Gain PAE 4 0 0 3 6 9 12 15 Max Pdis @ 85C 2 GHz 12 GHz 8 6 4 2 0 -10 -6 INPUT POWER (dBm) Absolute Maximum Ratings -2 2 6 10 14 18 INPUT POWER (dBm) AMPLIFIERS - LINEAR & POWER - CHIP Power Compression @ 7 GHz Power Compression @ 2 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +9 Vdc Gate Bias Voltage (Vgg1) 0 to -2 Vdc +7.5 299 Gate Bias Voltage (Vgg2) +2V to +4V +8.0 300 RF Input Power (RFIN)(Vdd = +12V) +20 dBm +8.5 301 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 41 mW/°C above 85 °C) 3.69 W Thermal Resistance (channel to die bottom) 24.4 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class1A, Passed 250V Vdd (V) Idd (mA) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz AMPLIFIERS - LINEAR & POWER - CHIP Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 5 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Pad Descriptions Function Description 1 IN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 Vgg2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3V should be applied to Vgg2. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 OUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 7 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 6 Vgg1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D AMPLIFIERS - LINEAR & POWER - CHIP Pad Number 6 HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz AMPLIFIERS - LINEAR & POWER - CHIP Assembly Diagram Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC659 v02.0217 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 8