IRF IRF9Z30PBF Hexfet power mosfet Datasheet

PD- 96095
IRF9Z30PbF
HEXFET® POWER MOSFET
Features
Product Summary
P-Channel Verasatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Lead-Free
Part Number
IRF9Z30PbF
VDS(V)
RDSON (Ω)
ID (A)
-50
0.14
-18
D
G
TO-220AB
S
Description
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They
retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of
paralleling, and excellent temperature stability.
P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers
circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity
connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse
amplifiers.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage -50
VDGR
Drain-to-Gate Voltage (RGS =20KΩ) -50
VGS
Gate-to-Source Voltage
±20
ID @ TC = 25°C
Continuous Drain Current, VGS
-18
ID @ TC = 100°C
Continuous Drain Current, VGS
-11
IDM
Pulsed Drain Current -60
PD @TC = 25°C
Max. Power Dissipation
74
W
Linear Derating Factor
Inductive Current, Clamped (L= 100µH) See Fig. 14
0.59
W/°C
ILM
IL
Unclamped Inductive Current(Avalanche Current) TJ
Operating Junction and
TSTG
Storage Temperature Range
-60
See Fig. 15
-3.1
-55 to + 150
V
A
A
°C
300 (0.063 in. (1.6mm) from case for 10s)
Lead Temperature
Thermal Resistance
Parameter
Typ.
Max.
RθJC
Junction-to-Case
–––
1.7
RθCS
Case-to-Sink, Flat, Greased Surface
1.0
–––
RθJA
Junction-to-Ambient
–––
80
www.irf.com
Units
°C/W
1
03/27/07
IRF9Z30PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
–––
-4.0
V
VDS = VGS, ID = -250µA
–––
-500
BVDSS
Drain-to-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
-2.0
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
–––
500
Drain-to-Source Leakage Current
–––
–––
-250
–––
–––
-1000
-18
–––
–––
A
VDS > ID(on) X RDS(ON) (max)., VGS = -10V
0.093 0.14
Ω
VGS = -10V, ID = -9.3A
S
VDS = 2 X VGS, IDS = -9.0A
pF
VDS = -25V
IDSS
ID(on)
On- State Drain Current RDS(on) Static Drain-to-Source On-Resistance
-50
–––
–––
nA
µA
VGS = -20V
VGS = 20V
VDS = Max. Rating, VGS = 0V
VDS = Max. Rating x 0.8, VGS = 0V, TJ = 125°C
gfs
Forward Transconductance
3.1
4.7
–––
Ciss
Input Capacitance
–––
900
–––
Coss
Output Capacitance
–––
570
–––
Crss
Reverse Transfer Capacitance
–––
140
–––
ƒ = 1.0MHz,
td(on)
Turn-On Delay Time
–––
12
18
VDD = -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω
tr
Rise Time
–––
110
170
td(off)
Turn-Off Delay Time
–––
21
32
tf
Fall Time
–––
64
96
Qg
Total Gate Charge (Gate -Source Plus Gate-Drain)
–––
26
39
VGS = -10V, ID = -18A, VDS = 0.8 Max. Rating
Qgs
Post-Vth Gate-to-Source Charge
–––
6.9
10
Qgd
Gate-to-Drain Charge
–––
9.7
15
nC See Fig.17 for test circuit (Gate charge is essentially
independent of operating temperature.)
LD
Internal Drain Inductance
–––
4.5
–––
LS
VGS = 0V
See Fig.16
ns
nH
Internal Source Inductance
–––
7.5
See Fig.10
–––
(MOSFET switching times are assentially independent
of operating temperature)
Measured from the drain
Modified MOSFET symbol
lead, 6mm (0.25 in.) from
showing
package to center of die.
the internal
Measured from the source
device
lead, 6mm (0.25 in.) from
inductances.
package to source bonding pad.
Source-Drain Diode Ratings and Characteristics
IS
Parameter
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode) Diode Forward Voltage trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Ton
Forward Turn-on Time
Min. Typ. Max. Units
–––
–––
-18
A
–––
–––
-60
–––
–––
-6.3
54
120
250
0.20 0.47
1.1
Conditions
MOSFET symbol
V
showing the
integral reverse
p-n junction rectifier.
TJ = 25°C, IS = -18A, VGS = 0V
ns TJ = 25°C, IF = -18A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Note:
TJ = 25°C to 150°C
Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5).
@ Vdd = -25V, TJ= 25°C, L = 100µH, R G = 25Ω.
Pulse Test : Pulse width ≤ 300ms, Duty Cycle ≤ 2%.
2
www.irf.com
IRF9Z30PbF
www.irf.com
3
IRF9Z30PbF
4
www.irf.com
IRF9Z30PbF
www.irf.com
5
IRF9Z30PbF
6
www.irf.com
IRF9Z30PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line position
indicates "Lead - Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 19
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2007
www.irf.com
7
Similar pages