QFET ® FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description • 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. • Low gate charge ( typical 41nC) • Low Crss ( typical 68pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D G S D I2-PAK D2-PAK FQB Series G FQI Series G D S S Absolute Maximum Ratings FQB16N25C / FQI16N25C Units VDSS Symbol Drain-Source Voltage Parameter 250 V ID Drain Current - Continuous (TC = 25°C) 15.6 A - Continuous (TC = 100°C) 9.8 A IDM Drain Current VGSS Gate-Source Voltage 62.4 A ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) IAR 410 mJ Avalanche Current (Note 1) 15.6 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD - Pulsed (Note 1) Power Dissipation (TA = 25°C)* 3.13 W Power Dissipation (TC = 25°C) - Derate above 25°C 139 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 1.11 W/°C -55 to +150 °C 300 °C FQB16N25C / FQI16N25C Units 0.9 °C/W Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient* 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB16N25C/FQI16N25C Rev. A1 1 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET June 2006 Device Marking Device Package Reel Size Tape Width Quantity FQB16N25C FQB16N25CTM D2-PAK 330mm 24mm 800 FQI16N25C FQI16N25CTU I2-PAK -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.31 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA VDS = 200 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.22 0.27 Ω -- 10.5 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.8A gFS Forward Transconductance VDS = 40 V, ID = 7.8 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF -- 170 220 pF -- 68 89 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 15.6A, RG = 25 Ω (Note 4, 5) VDS = 200 V, ID = 15.6A, VGS = 10 V (Note 4, 5) -- 15 40 ns -- 130 270 ns -- 135 280 ns -- 105 220 ns -- 41 53.5 nC -- 5.6 -- nC -- 22.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 62.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A -- -- 1.5 V trr Reverse Recovery Time -- 260 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 15.6 A, dIF / dt = 100 A/µs -- 2.47 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.7mH, IAS = 15.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 15.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQB16N25C/FQI16N25C Rev. A1 2 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.5 1.0 VGS = 10V 0.5 VGS = 20V ※ Note : TJ = 25℃ 0.0 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test -1 0 10 20 30 40 10 50 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 3000 VGS, Gate-Source Voltage [V] Ciss Coss Crss 1000 500 0 -1 10 1.2 1.4 1.6 1.8 12 2000 1500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitance [pF] 25℃ ※ Notes : 1. VGS = 0 V 2. f = 1 MHz VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 ※ Note : ID = 15.6A 0 10 0 1 10 FQB16N25C/FQI16N25C Rev. A1 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 7.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 16 Operation in This Area is Limited by R DS(on) 2 100 µs 12 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 1 10 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C 8 4 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 0 .9 0 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQB16N25C/FQI16N25C Rev. A1 4 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FQB16N25C/FQI16N25C 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB16N25C/FQI16N25C Rev. A1 5 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB16N25C/FQI16N25C Rev. A1 6 www.fairchildsemi.com 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 (0.75) 3° ~ 0° 0.80 ±0.10 1.27 ±0.10 2.54 TYP 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters FQB16N25C/FQI16N25C Rev. A1 7 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Mechanical Dimensions (Continued) I2-PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 5° (4 0.80 ±0.10 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 1.27 ±0.10 +0.10 0.50 –0.05 2.54 TYP 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FQB16N25C/FQI16N25C Rev. A1 8 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Package Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 9 FQB16N25C/FQI16N25C Rev. A1 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET TRADEMARKS