FAIRCHILD FJPF5200OTU

FJPF5200
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: IC = 15A.
High Power Dissipation : 50watts.
High Fequency : 30MHz.
High Voltage : VCEO=230V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to FJPF1943
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO264 package, 2SC5200/FJL4315 : 150 watts
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
Absolute Maximum Ratings*
Symbol
TO-220F
1
1.Base
2.Collector
3.Emitter
Ta = 25°C unless otherwise noted
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
230
V
BVCEO
Collector-Emitter Voltage
230
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current(DC)
15
A
IB
Base Current
1.5
A
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
50
0.4
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
Units
2.5
°C/W
* Device mounted on minimum pad size
hFE Classification
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
1
FJPF5200 — NPN Epitaxial Silicon Transistor
January 2008
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=5mA, IE=0
230
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, RBE=∞
230
V
BVEBO
Emitter-Base Breakdown Voltage
IE=5mA, IC=0
5
V
ICBO
Collector Cut-off Current
VCB=230V, IE=0
5.0
µA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
5.0
µA
hFE1
DC Current Gain
VCE=5V, IC=1A
55
hFE2
DC Current Gain
VCE=5V, IC=7A
35
VCE(sat)
Collector-Emitter Saturation Voltage
IC=8A, IB=0.8A
0.4
3.0
V
VBE(on)
Base-Emitter On Voltage
VCE=5V, IC=7A
1.0
1.5
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=1A
30
MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
200
pF
160
60
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%
Ordering Information
Part Number
Marking
Package
Packing Method
FJPF5200RTU
J5200R
TO-220F
TUBE
hFE1 R grade
FJPF5200OTU
J5200O
TO-220F
TUBE
hFE1 O grade
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
Remarks
www.fairchildsemi.com
2
FJPF5200 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
FJPF5200 — NPN Epitaxial Silicon Transistor
Typical Characteristics
16
IB=200mA
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
12
o
IB = 100mA
10
o
Tj=125 C
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
14
IB = 80mA
8
IB = 60mA
6
IB = 40mA
4
2
Tj=25 C
Vce=5V
100
o
Tj=-25 C
10
IB = 0
0
0
2
4
6
8
10
12
14
16
18
20
1
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
Vce(sat)[mV], SATURATION VOLTAGE
Vbe(sat)[mV], SATURATION VOLTAGE
10000
Ic=10Ib
o
Tj=-25 C
o
Tj=25 C
1000
o
Tj=125 C
100
0.1
1
10
Ic=10Ib
1000
Tj=25?
100
Tj=125?
Tj=-25?
10
1
0.1
1
Ic[A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
Transient Thermal Resistance, Rthja[ C / W]
12
VCE = 5V
IC[A], COLLECTOR CURRENT
o
10
8
6
4
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3.0
2.5
2.0
1.5
1.0
0.5
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Pulse duration [sec]
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Thermal Resistance
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
10
Ic[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
0
0.0
10
Ic[A], COLLECTOR CURRENT
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3
FJPF5200 — NPN Epitaxial Silicon Transistor
Typical Characteristics
60
PC[W], POWER DISSIPATION
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
4
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1.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJPF5200 Rev. A
www.fairchildsemi.com
5
FJPF5200 NPN Epitaxial Silicon Transistor
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