PHILIPS BU2508AX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
PINNING - SOT399
PIN
1
base
2
collector
3
emitter
case isolated
MAX.
UNIT
4.5
0.4
1500
700
8
15
45
1.0
0.6
V
V
A
A
W
V
A
µs
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 1.12 A
ICsat = 4.5 A; IB(end) = 1.1 A
PIN CONFIGURATION
DESCRIPTION
TYP.
SYMBOL
c
case
b
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-55
-
1500
700
8
15
4
6
100
5
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
November 1997
1
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
700
13.5
-
1.0
-
mA
V
V
4
13
5.5
1.0
1.1
7.0
V
V
TYP.
MAX.
UNIT
80
-
pF
5.0
0.4
6.0
0.6
µs
µs
4.7
0.25
5.7
0.35
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.12 A
IC = 4.5 A; IB = 1.7 A
IC = 100 mA;VCE = 5 V
IC = 4.5 A;VCE = 1 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
ts
tf
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
Switching times (38 kHz line
deflection circuit)
ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts
tf
Turn-off storage time
Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
November 1997
2
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
ICsat
+ 50v
90 %
100-200R
IC
10 %
Horizontal
tf
Oscilloscope
t
ts
IB
IBend
Vertical
t
1R
100R
6V
30-60 Hz
- IBM
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
1mH
250
200
LB
IBend
100
D.U.T.
12nF
BY228
-VBB
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR
IC
Fig.5. Switching times test circuit.
ICsat
100
h FE
DIODE
t
5V
IBend
IB
10
t
20us
1V
26us
Tj = 25 C
64us
Tj = 125 C
VCE
1
0.01
Fig.3. Switching times waveforms.
November 1997
0.1
1
10
IC / A
t
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
3
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
1.2
BU2508AX
VBESAT / V
1.1
VCESAT / V
10
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1
6A
0.9
4.5A
0.8
1
IC/IB=
3
4
5
0.7
0.6
3A
IC=2A
0.5
0.4
0.1
1
IC / A
0.1
10
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
1
0.1
1
IB / A
10
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
VCESAT / V
Eoff / uJ
1000
IC/IB=
0.9
0.8
5
IC = 4.5A
0.7
4
3.5A
0.6
3
0.5
100
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
10
0.1
1
IC / A
10
0.1
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
1.2
12
11
10
9
8
7
6
5
4
3
2
1
0
Tj = 25 C
Tj = 125 C
1
0.9
IC=
6A
4.5A
3A
2A
0.8
0.7
0.6
0
1
2
IB / A
3
4
ts, tf / us
ts
IC =
4.5A
3.5A
tf
0.1
1
IB / A
10
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
November 1997
10
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 16 kHz
VBESAT / V
1.1
1
IB / A
4
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
IC / A
100
100
IC / A
= 0.01
= 0.01
ICM max
ICM max
tp =
IC max
10
10 us
II
II
Ptot max
10 us
Ptot max
1
1
100 us
100 us
1 ms
I
1 ms
I
0.1
0.1
10 ms
10 ms
DC
DC
0.01
0.01
1
1000
100
10
1
VCE / V
10
1000
100
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
Fig.15. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
120
tp =
IC max
10
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
Normalised Power Derating
PD%
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Ths / C
100
120
140
Fig.14. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
November 1997
5
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.16. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1997
6
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1997
7
Rev 2.300
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